Browsing by author "Vohra, Anurag"
Now showing items 1-20 of 53
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1.2 kV Enhancement-Mode p-GaN Gate HEMTs on 200 mm Engineered Substrates
Kumar, Sujit; Geens, Karen; Vohra, Anurag; Wellekens, Dirk; Cingu, Deepthi; Fabris, Elena; Cosnier, Thibault; Hahn, H.; Bakeroot, Benoit; Posthuma, Niels; Langer, Robert; Decoutere, Stefaan (2024) -
200 V GaN-on-SOI Smart Power Platform for Monolithic GaN Power ICs
Cosnier, Thibault; Syshchyk, Olga; De Jaeger, Brice; Geens, Karen; Cingu, Deepthi; Fabris, Elena; Borga, Matteo; Vohra, Anurag; Zhao, Ming; Bakeroot, Benoit; Wellekens, Dirk; Magnani, Alessandro; Vudumula, Pavan; Chatterjee, Urmimala; Langer, Robert; Decoutere, Stefaan (2021) -
A demonstration of donor passivation through direct formation of V-Asx complexes in GexSn1-x
Khanam, Afrina; Vohra, Anurag; Slotte, Jonatan; Makkonen, Ilja; Loo, Roger; Pourtois, Geoffrey; Vandervorst, Wilfried (2020-05) -
A fully integrated half-bridge driver circuit in All-GaN GAN-IC technology
Chatterjee, Urmimala; De Pauw, Herbert; Syshchyk, Olga; Cosnier, Thibault; Vohra, Anurag; Decoutere, Stefaan (2023) -
A new method to fabricate Ge nanowires: selective lateral etching of GeSn:P-Ge multi-stacks
Porret, Clément; Vohra, Anurag; Sebaai, Farid; Douhard, Bastien; Hikavyy, Andriy; Loo, Roger (2018) -
Application of group IV epitaxy in the advanced CMOS fabrication
Hikavyy, Andriy; Porret, Clément; Rosseel, Erik; Vohra, Anurag; Loo, Roger (2018) -
Benchmarking Ge1-xSnx CVD Epitaxy using GeH4 and Ge2H6
Vohra, Anurag; Loo, Roger; Kohen, David; Margetis, Joe; Tolle, John; Stange, Daniela; Buca, Dan; Vandervorst, Wilfried (2016-11) -
Compensating defects in epitaxial Ge and GexSn1-x
Slotte, Jonatan; Khanam, Afrina; Vohra, Anurag; Makkonen, Ilja; Loo, Roger; Pourtois, Geoffrey; Porret, Clément; Vandervorst, Wilfried (2019) -
Correlation of heat transport mechanism and structural properties of GaN high electron mobility transistors
Mitterhuber, Lisa; Kosednar-Legenstein, Barbara; Vohra, Anurag; Borga, Matteo; Posthuma, Niels; Kraker, Elke (2024) -
Development and analysis of thick GaN drift layers on 200 mm CTE-matched substrate for vertical device processing
Filho Goncalez, Walter; Borga, Matteo; Geens, Karen; Cingu, Deepthi; Chatterjee, Urmimala; Banerjee, Sourish; Vohra, Anurag; Han, Han; Minj, Albert; Hahn, Herwig; Marx, Matthias; Fahle, Dirk; Bakeroot, Benoit; Decoutere, Stefaan (2023) -
Device optimization for 200V GaN-on-SOI Platform for Monolithicly Integrated Power Circuits
Syshchyk, Olga; Cosnier, Thibault; Huang, Zheng-Hong; Cingu, Deepthi; Wellekens, Dirk; Vohra, Anurag; Geens, Karen; Vudumula, Pavan; Chatterjee, Urmimala; Decoutere, Stefaan; Wu, Tian-Li; Bakeroot, Benoit (2022) -
Dopant Deactivation Mechanisms in Ge and GeSn Alloys
Vohra, Anurag (2020-08) -
Enhanced B doping in CVD-grown GeSn:B using B $d-doping layers
Kohen, David; Vohra, Anurag; Loo, Roger; Vandervorst, Wilfried; Bhargava, Nupur; Margetis, Joe; Tolle, John (2018-02) -
Epitaxial buffer structures grown on 200 mm engineering substrates for 1200 V E-mode HEMT application
Vohra, Anurag; Geens, Karen; Zhao, Ming; Syshchyk, Olga; Hahn, Herwig; Fahle, Dirk; Bakeroot, Benoit; Wellekens, Dirk; Vanhove, Benjamin; Langer, Robert; Decoutere, Stefaan (2022) -
Epitaxial GeSn: Impact of process conditions on material quality
Loo, Roger; Shimura, Yosuke; Ike, Shinichi; Vohra, Anurag; Stoica, Toma; Stange, Daniela; Buca, Dan; Kohen, David; Margetis, Joe; Tolle, John (2018) -
Epitaxial GeSn: impact of process conditions on material quality
Loo, Roger; Shimura, Yosuke; Ike, Shinichi; Vohra, Anurag; Stoica, Toma; Buca, Dan; Kohen, David; Margetis, Joe; Tolle, John (2018-05) -
Epitaxial GeSn: Impact of process conditions on material quality
Loo, Roger; Shimura, Yosuke; Ike, Shinichi; Vohra, Anurag; Stoica, Toma; Stange, Daniela; Buca, Dan; Kohen, David; Margetis, Joe; Tolle, John (2018) -
Epitaxial growth of (Si)GeSn source-drain layers for advanced gate all around devices
Loo, Roger; Vohra, Anurag; Porret, Clément; Hikavyy, Andriy; Rosseel, Erik; Schaekers, Marc; Capogreco, Elena; Shimura, Yosuke; Kohen, David; Tolle, John; Vandervorst, Wilfried (2019) -
Epitaxial growth of (Si)GeSn source/drain layers for advanced gate all around devices
Loo, Roger; Vohra, Anurag; Porret, Clément; Hikavyy, Andriy; Rosseel, Erik; Schaekers, Marc; Capogreco, Elena; Shimura, Yosuke; Kohen, David; Tolle, John; Vandervorst, Wilfried (2019-09) -
Epitaxial growth of Group IV semiconductors
Loo, Roger; Hikavyy, Andriy; Porret, Clément; Rosseel, Erik; Vohra, Anurag; Langer, Robert (2018-12)