Browsing by author "Horiguchi, Naoto"
Now showing items 21-40 of 444
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A record GmSAT/SSSAT and PBTI reliability in Si-passivated Ge nFinFETs by improved gate stack surface preparation
Arimura, Hiroaki; Cott, Daire; Boccardi, Guillaume; Loo, Roger; Wostyn, Kurt; Brus, Stephan; Capogreco, Elena; Opdebeeck, Ann; Witters, Liesbeth; Conard, Thierry; Suhard, Samuel; van Dorp, Dennis; Kenis, Karine; Ragnarsson, Lars-Ake; Mitard, Jerome; Holsteyns, Frank; De Heyn, Vincent; Mocuta, Dan; Collaert, Nadine; Horiguchi, Naoto (2019-06) -
A simplified method for (circular) transmission line model simulation and ultralow contact resistivity extraction
Yu, Hao; Schaekers, Marc; Schram, Tom; Collaert, Nadine; De Meyer, Kristin; Horiguchi, Naoto; Thean, Aaron; Barla, Kathy (2014) -
A snapshot review on metal-semiconductor contact exploration for 7-nm CMOS technology and beyond
Yu, Hao; Schaekers, Marc; Everaert, Jean-Luc; Horiguchi, Naoto; De Meyer, Kristin; Collaert, Nadine (2022-11-21) -
A test-proven As-grown-Generation (A-G) model for predicting NBTI under use-bias
Ji, Z.; Zhang, J.F.; Lin, L.; Duan, M.; Zhang, W.; Zhang, X.; Gao, R.; Kaczer, Ben; Franco, Jacopo; Schram, Tom; Horiguchi, Naoto; De Gendt, Stefan; Groeseneken, Guido (2015) -
Ab initio analysis of defect formation and dopant activation in P and As co-doped Si
Nakazaki, Nobuya; Rosseel, Erik; Porret, Clément; Hikavyy, Andriy; Loo, Roger; Horiguchi, Naoto; Pourtois, Geoffrey (2019) -
Accurate prediction of device performance in sub-10nm WFIN FinFETs using scalpel SSRM-based calibration of process simulations
Eyben, Pierre; Matagne, Philippe; Chiarella, Thomas; De Keersgieter, An; Kubicek, Stefan; Mitard, Jerome; Mocuta, Anda; Horiguchi, Naoto; Thean, Aaron; Mocuta, Dan (2016) -
Addressing Key Challenges for SiGe-pFin Technologies: Fin Integrity, Low-D-IT Si-cap-free Gate Stack and Optimizing the Channel Strain
Arimura, Hiroaki; Capogreco, Elena; Wostyn, Kurt; Eneman, Geert; Ragnarsson, Lars-Ake; Brus, Stephan; Baudot, Sylvain; Peter, Antony; Schram, Tom; Favia, Paola; Richard, Olivier; Bender, Hugo; Mitard, Jerome; Horiguchi, Naoto (2020) -
Advanced USJ for high-k / metal gate CMOS devices
Absil, Philippe; Ortolland, Claude; Aoulaiche, Marc; Rosseel, Erik; Verheyen, Peter; Vrancken, Christa; Horiguchi, Naoto; Noda, Tajii; Felch, Susan; Schreutelkamp, Rob; Hoffmann, Thomas Y. (2008) -
Advances on doping strategies for triple-gate FinFETs and lateral gate-all-around nanowire FETs and their impact on device performance
Veloso, Anabela; De Keersgieter, An; Matagne, Philippe; Horiguchi, Naoto; Collaert, Nadine (2017) -
Advantage of NW structure in preservation of SRB-induced strain and investigation of off-state leakage in strained stacked Ge NW pFET
Arimura, Hiroaki; Eneman, Geert; Capogreco, Elena; Witters, Liesbeth; De Keersgieter, An; Favia, Paola; Porret, Clément; Hikavyy, Andriy; Loo, Roger; Bender, Hugo; Ragnarsson, Lars-Ake; Mitard, Jerome; Collaert, Nadine; Mocuta, Dan; Horiguchi, Naoto (2018) -
Al-induced defect generation in cubic phase HfO2/SiO2/Si gate stacks
Arimura, Hiroaki; Ragnarsson, Lars-Ake; Veloso, Anabela; Adelmann, Christoph; Degraeve, Robin; Schram, Tom; Chew, Soon Aik; Franco, Jacopo; Cho, Moon Ju; Kaczer, Ben; Groeseneken, Guido; Horiguchi, Naoto; Thean, Aaron (2012) -
An in-depth study of high-performing strained germanium nanaowires pFETs
Mitard, Jerome; Jang, Doyoung; Eneman, Geert; Arimura, Hiroaki; Parvais, Bertrand; Richard, Olivier; Van Marcke, Patricia; Witters, Liesbeth; Capogreco, Elena; Bender, Hugo; Ritzenthaler, Romain; Mertens, Hans; Hikavyy, Andriy; Loo, Roger; Dekkers, Harold; Sebaai, Farid; Horiguchi, Naoto; Mocuta, Anda; Collaert, Nadine (2018) -
Analog performance and its variability in sub-10 nm fin-width FinFETs: a detailed analysis
Bhoir, Mandar S.; Chiarella, Thomas; Ragnarsson, Lars-Ake; Mitard, Jerome; Terzieva, Valentina; Horiguchi, Naoto; Mohapatra, Nihar R. (2019) -
Analysis of diffusion mechanisms for SSD in confined volumes : An alternative solution for extension formation in N7 and N5 technologies
Eyben, Pierre; Pawlak, Bartek; De Keersgieter, An; Kikuchi, Yoshiaki; Mitard, Jerome; Horiguchi, Naoto; Mocuta, Dan; Mocuta, Anda (2018) -
Analysis of dopant diffusion and defects in fin structure using an atoministic kinetic Monte Carlo approach
Noda, Taiji; Kambham, Ajay; Vrancken, Christa; Thean, Aaron; Horiguchi, Naoto; Vandervorst, Wilfried (2013) -
Analysis of dopant diffusion and defects in SiGe channel quantum well for laser annealed device using an atomistic kinetic Monte Carlo approach
Noda, Taji; Witters, Liesbeth; Mitard, Jerome; Rosseel, Erik; Hellings, Geert; Vrancken, Christa; Bender, Hugo; Hoffmann, T.Y.; Horiguchi, Naoto; Vandervorst, Wilfried (2011) -
Analysis of dopant diffusion and defects in SiGe-channel implant free quantum well (IFQW) devices using an atomistic kinetic Monte Carlo approach
Noda, Taiji; Mitard, Jerome; Witters, Liesbeth; Hellings, Geert; Vrancken, Christa; Eyben, Pierre; Thean, Aaron; Horiguchi, Naoto; Vandervorst, Wilfried (2012) -
Application of group IV epitaxy for production of gate all around transistors
Hikavyy, Andriy; Mertens, Hans; Witters, Liesbeth; Loo, Roger; Horiguchi, Naoto (2017) -
Assessment of SiGe quantum well transistors for DRAM peripheral applications
Ritzenthaler, Romain; Schram, Tom; Eneman, Geert; Mocuta, Anda; Horiguchi, Naoto; Thean, Aaron; Spessot, Alessio; Aoulaiche, Marc; Fazan, Pierre; Noh, Kyung Bong; Son, Yunik (2015) -
Atom probe tomography for 3D-dopant analysis in FinFET devices
Kambham, Ajay Kumar; Zschaetzsch, Gerd; Sasaki, Yuichiro; Togo, Mitsuhiro; Horiguchi, Naoto; Mody, J.; Florakis, Antonios; Gajula, D.R.; Kumar, Arul; Gilbert, Matthieu; Vandervorst, Wilfried (2012)