Browsing by author "Wellekens, Dirk"
Now showing items 21-40 of 94
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Au-free low temperature ohmic contacts for AlGaN/GaN power devices on 200 mm substrates
Firrincieli, Andrea; De Jaeger, Brice; You, Shuzhen; Wellekens, Dirk; Van Hove, Marleen; Decoutere, Stefaan (2013-09) -
Au-free ohmic contacts for AlGaN/GaN power devices on 200 mm Si substrates
Firrincieli, Andrea; De Jaeger, Brice; You, Shuzhen; Wellekens, Dirk; Van Hove, Marleen; Decoutere, Stefaan (2014) -
Au-free, high-breakdown AlGaN/GaN MISHEMTs with low leakage, high yield and robust TDDB characteristics
Lenci, Silvia; Kang, Xuanwu; Wellekens, Dirk; Van Hove, Marleen; Boulay, Sanae; Stoffels, Steve; Geens, Karen; Zahid, Mohammed; Decoutere, Stefaan (2012) -
Back-bias enhanced source-side injection in 0.25μm embedded flash memories
Van Houdt, Jan; Verheyen, P.; Frisson, Jo; Wellekens, Dirk; Lorenzini, Martino; Maes, Herman (1999) -
Channel hot electron injection versus Fowler-Nordheim tunneling for multilevel charge storage in non-volatile memories
Montanari, Donato; Van Houdt, Jan; Wellekens, Dirk; Hendrickx, Paul; Groeseneken, Guido; Maes, Herman (1997) -
CMOS-compatible high-power low-leakage AlGaN/GaN MISHEMT on silicon substrate
Van Hove, Marleen; Boulay, Sanae; Bahl, Sandeep; Stoffels, Steve; Kang, Xuanwu; Wellekens, Dirk; Geens, Karen; Delabie, Annelies; Decoutere, Stefaan (2012) -
Comparative reliability investigation of different nitride based local charge trapping memory devices
Breuil, Laurent; Haspeslagh, Luc; Blomme, Pieter; Lorenzini, Martino; Wellekens, Dirk; De Vos, Joeri; Van Houdt, Jan (2005) -
Comparison of the suitability of various programming mechanisms used for multilevel non-volatile information storage
Montanari, Donato; Van Houdt, Jan; Wellekens, Dirk; Hendrickx, Paul; Groeseneken, Guido; Maes, Herman (1996) -
Defect Characterization in High-Electron-Mobility Transistors with Regrown p-GaN Gate by Low-Frequency Noise and Deep-Level Transient Spectroscopy
Hsu, Po-Chun; Simoen, Eddy; Liang, Hu; De Jaeger, Brice; Bakeroot, Benoit; Wellekens, Dirk; Decoutere, Stefaan (2021) -
Device breakdown optimization of Al2O3/GaN E-mode MISFETs
Kang, Xuanwu; Wellekens, Dirk; Van Hove, Marleen; De Jaeger, Brice; Ronchi, Nicolo; Wu, Tian-Li; You, Shuzhen; Bakeroot, Benoit; Hu, Jie; Marcon, Denis; Stoffels, Steve; Decoutere, Stefaan (2016) -
Device optimization for 200V GaN-on-SOI Platform for Monolithicly Integrated Power Circuits
Syshchyk, Olga; Cosnier, Thibault; Huang, Zheng-Hong; Cingu, Deepthi; Wellekens, Dirk; Vohra, Anurag; Geens, Karen; Vudumula, Pavan; Chatterjee, Urmimala; Decoutere, Stefaan; Wu, Tian-Li; Bakeroot, Benoit (2022) -
Dielectrics choice and processing for low dispersion enhancement mode p-GaN gate HEMTs on 200mm Si substrates
You, Shuzhen; Posthuma, Niels; Ronchi, Nicolo; Stoffels, Steve; Bakeroot, Benoit; Wellekens, Dirk; Liang, Hu; Zhao, Ming; Decoutere, Stefaan (2018) -
Direct comparison of GaN-based e-mode architectures (recessed MISHEMT and p-GaN HEMTs) processed on 200mm GaN-on-Si with Au-free technology
Marcon, Denis; Van Hove, Marleen; De Jaeger, Brice; Posthuma, Niels; Wellekens, Dirk; You, Shuzhen; Kang, Xuanwu; Wu, Tian-Li; Willems, Maarten; Stoffels, Steve; Decoutere, Stefaan (2015) -
Embedded HIMOS® Flash Memory in 0.35 μm and 0.25 μm CMOS Technologies
Wellekens, Dirk; Van Houdt, Jan; Haspeslagh, Luc; Tsouhlarakis, Jorgo; Hendrickx, Paul; Deferm, Ludo; Maes, Herman (2000) -
Epitaxial buffer structures grown on 200 mm engineering substrates for 1200 V E-mode HEMT application
Vohra, Anurag; Geens, Karen; Zhao, Ming; Syshchyk, Olga; Hahn, Herwig; Fahle, Dirk; Bakeroot, Benoit; Wellekens, Dirk; Vanhove, Benjamin; Langer, Robert; Decoutere, Stefaan (2022) -
Epitaxial growth by MOCVD on 200 mm engineered substrates for power devices & ICs beyond 650 V
Fahle, Dirk; Zhao, Ming; Geens, Karen; Li, Xiangdong; Wellekens, Dirk; Magnani, Alessandro; Amirifar, Nooshin; Bakeroot, Benoit; You, Shuzhen; Odnoblyudov, Vladimir; Aktas, Ozgur; Basceri, Cem; Marcon, Denis; Groeseneken, Guido; Decoutere, Stefaan; Hahn, Herwig; Heuken, Michael (2019) -
Evaluation of novel carrier substrates for high reliability and integrated GaN devices in a 200 mm complementary metal-oxide semiconductor compatible process
Stoffels, Steve; Geens, Karen; Li, Xiangdong; Wellekens, Dirk; You, Shuzhen; Zhao, Ming; Borga, Matteo; Zanoni, Enrico; Meneghesso, Gaudenzio; Meneghini, Matteo; Posthuma, Niels; Van Hove, Marleen; Decoutere, Stefaan (2018) -
Exploration of rare earth materials for future interpoly dielectric replacement in Flash memory devices
Wellekens, Dirk; Van Elshocht, Sven; Adelmann, Christoph; Meersschaut, Johan; Swerts, Johan; Kittl, Jorge; Cacciato, Antonio; Debusschere, Ingrid; Jurczak, Gosia; Van Houdt, Jan (2010) -
Fabrication and performance of Au-free AlGaN/GaN-on-Si power devices
Van Hove, Marleen; Kang, Xuanwu; Stoffels, Steve; Wellekens, Dirk; Ronchi, Nicolo; Venegas, Rafael; Geens, Karen; Decoutere, Stefaan (2013) -
Failure rate prediction and accelerated detection of anomalous charge loss in flash memories by using an analytical transient physics-based charge loss model
Schuler, Franz; Tempel, Georg; Melzner, H.; Jacob, M.; Hendrickx, Paul; Wellekens, Dirk; Van Houdt, Jan (2002)