Browsing by author "Van Houdt, Jan"
Now showing items 21-40 of 357
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A new scalable self-aligned dual-bit split-gate charge trapping memory device
Breuil, Laurent; Haspeslagh, Luc; Blomme, Pieter; Wellekens, Dirk; De Vos, Joeri; Lorenzini, Martino; Van Houdt, Jan (2005) -
A Novel Dual Ferroelectric Layer Based MFMFIS FeFET with Optimal Stack Tuning Toward Low Power and High-Speed NVM for Neuromorphic Applications
Ali, Tarek; Seidel, Konrad; Kuhnel, Kati; Rudolph, Matthias; Czernohorsky, Malte; Mertens, Konstantin; Hoffmann, Raik; Zimmermann, Katrin; Muehle, Uwe; Mueller, Johannes; Van Houdt, Jan; Eng, Lukas M. (2020) -
A Novel Hybrid High-Speed and Low Power Antiferroelectric HSO Boosted Charge Trap Memory for High-Density Storage
Ali, T.; Mertens, K.; Olivo, R.; Rudolph, M.; Oehler, S.; Kuehnel, K.; Lehninger, D.; Mueller, F.; Lederer, M.; Hoffmann, R.; Schramm, P.; Biedermann, K.; Kia, Alireza M.; Metzger, J.; Binder, R.; Czernohorsky, M.; Kaempfe, T.; Mueller, J.; Seidel, K.; Van Houdt, Jan; Eng, L. M. (2020) -
A novel low voltage memory device with an engineered SiO2/high-k tunneling barrier
Blomme, Pieter; Govoreanu, Bogdan; Van Houdt, Jan; De Meyer, Kristin (2003) -
A novel multilayer inter-gate dielectric enabling up To 18V program / erase window for planar NAND flash
Breuil, Laurent; Lisoni, Judit; Blomme, Pieter; Van den Bosch, Geert; Van Houdt, Jan (2013-05) -
A novel PEALD tunnel dielectric for three-dimensional non-volatile charge-trapping technology
Cacciato, Antonio; Breuil, Laurent; Dekkers, Harold; Zahid, Mohammed; Kar, Gouri Sankar; Everaert, Jean-Luc; Schoofs, Geert; Shi, Qixian; Van den Bosch, Geert; Jurczak, Gosia; Debusschere, Ingrid; Van Houdt, Jan; Cockburn, Andrew; Date, Lucien; Xa, Li Qun; Le, Maggie; Lee, Won (2011) -
A novel PEALD tunnel dielectric for three-dimensional non-volatile charge-trapping technology
Cacciato, Antonio; Breuil, Laurent; Dekkers, Harold; Zahid, Mohammed; Kar, Gouri Sankar; Everaert, Jean-Luc; Schoofs, Geert; Van den Bosch, Geert; Jurczak, Gosia; Debusschere, Ingrid; Van Houdt, Jan; Cockburn, Andrew; Date, Lucien; Xa, Li-Qun; Le, Maggie; Lee, Won (2010) -
A novel trapping/detrapping model for defect profiling in high-k materials using the two-pulse capacitance-voltage technique
Ruiz Aguado, Daniel; Govoreanu, Bogdan; Zhang, W.D.; Jurczak, Gosia; De Meyer, Kristin; Van Houdt, Jan (2010) -
A proper approach to characterize retention-after-cycling in 3D-Flash devices
Qiao, Fengying; Arreghini, Antonio; Blomme, Pieter; Van den Bosch, Geert; Pan, Liyang; Xu, Jun; Van Houdt, Jan (2013) -
Abnormal VTH/VFB shift caused by as-grown mobile charges in Al2O3 and its impacts on Flash memory cell operations
Tang, Baojun; Zhang, Weidong; Zhang, Jianfu; Van den Bosch, Geert; Govoreanu, Bogdan; Van Houdt, Jan (2011) -
Advantages of the FinFET architecture in SONOS and nanocrystal memory devices
Lombardo, S.; Gerardi, C.; Breuil, Laurent; Jahan, C.; Perniola, L.; Cina, G.; Corso, D.; Tripiciano, E.; Ancarani, V.; Iannoccone, G.; Bongiorno, C.; Garozzo, C.; Barbera, P.; Nowak, E.; Puglisi, R.; Costa, G.A.; Coccorese, C.; Vecchio, M.; Rimini, E.; Van Houdt, Jan; De Salvo, B.; Melanotte, M. (2007) -
Alternative nonvolatile memory technologies
Van Houdt, Jan (2001) -
An analytical model for the optimization of source-side injection flash EEPROM devices
Van Houdt, Jan; Groeseneken, Guido; Maes, Herman (1995) -
An effective model for analysing tunneling gate leakage currents through ultrathin oxides and high-k gate stacks from Si inversion layers
Govoreanu, Bogdan; Blomme, Pieter; Henson, Kirklen; Van Houdt, Jan; De Meyer, Kristin (2004) -
An investigation of the electron tunneling leakage current through ultrathin oxides/high-k gate stacks at inversion conditions
Govoreanu, Bogdan; Blomme, Pieter; Henson, Kirklen; Van Houdt, Jan; De Meyer, Kristin (2003) -
An ultra-thin hybrid floating gate concept for sub-20nm NAND flash technologies
Wellekens, Dirk; Blomme, Pieter; Rosmeulen, Maarten; Schram, Tom; Cacciato, Antonio; Van Aerde, Steven; Debusschere, Ingrid; Van Houdt, Jan (2011) -
Analysis of performance/variability trade-off in Macaroni-type 3-D NAND Memory
Congedo, Gabriele; Arreghini, Antonio; Liu, Lifang; Capogreco, Elena; Lisoni, Judit; Huet, Karim; Toque-Tresonne, Ines; Van Aerde, Steven; Toledano Luque, Maria; Tan, Chi Lim; Van den Bosch, Geert; Van Houdt, Jan (2014) -
Analysis of Wake-Up Reversal Behavior Induced by Imprint in La:HZO MFM Capacitors
Lee, Sumi; Ronchi, Nicolo; Bizindavyi, Jasper; Popovici, Mihaela Ioana; Banerjee, Kaustuv; Walke, Amey; Delhougne, Romain; Van Houdt, Jan; Shin, Changhwan (2023) -
Analytical model for failure rate prediction due to anomalous charge loss of Flash memories
Degraeve, Robin; Schuler, Franz; Lorenzini, Martino; Wellekens, Dirk; Hendrickx, Paul; Van Houdt, Jan; Haspeslagh, Luc; Groeseneken, Guido; Tempel, Georg (2001) -
Analytical percolation model for predicting anomalous charge loss in flash memories
Degraeve, Robin; Schuler, Franz; Kaczer, Ben; Lorenzini, Martino; Wellekens, Dirk; Hendrickx, Paul; Van Duuren, Michiel; Dormans, G.J.M.; Van Houdt, Jan; Haspeslagh, Luc; Groeseneken, Guido; Tempel, Georg (2004)