Browsing by author "Houssa, Michel"
Now showing items 21-40 of 281
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Atomic layer deposition of hafnium based gate dielectric layers for CMOS applications
Delabie, Annelies; Nyns, Laura; Bellenger, Florence; Caymax, Matty; Conard, Thierry; Franquet, Alexis; Houssa, Michel; Lin, Dennis; Meuris, Marc; Ragnarsson, Lars-Ake; Sioncke, Sonja; Swerts, Johan; Fedorenko, Yanina; Maes, Jan; Van Elshocht, Sven; De Gendt, Stefan (2007) -
Atomic layer deposition of high-k dielectric layers on Ge and III-V MOS channels
Delabie, Annelies; Alian, AliReza; Bellenger, Florence; Brammertz, Guy; Brunco, David; Caymax, Matty; Conard, Thierry; Franquet, Alexis; Houssa, Michel; Sioncke, Sonja; Van Elshocht, Sven; van Hemmen, J.L.; Keuning, W.; Kessels, W.M.M.; Afanas'ev, V.V.; Stesmans, Andre; Heyns, Marc; Meuris, Marc (2008) -
Atomic layer deposition of high-k dielectric layers on Ge and III-V MOS channels
Delabie, Annelies; Caymax, Matty; Bellenger, Florence; Brammertz, Guy; Conard, Thierry; Houssa, Michel; Sioncke, Sonja; Van Elshocht, Sven; Heyns, Marc; Meuris, Marc; Brunco, David; van Hemmen, J.L.; Keuning, W.; Kessels, W.M.M.; Afanas'ev, V.V.; Stesmans, Andre (2008) -
Au-3-Decorated graphene as a sensing platform for O-2 adsorption and desorption kinetics
Libeert, Guillaume; Murugesan, Ramasamy; Guba, Marton; Keijers, Wout; Collienne, Simon; Raes, Bart; Brems, Steven; De Gendt, Stefan; Silhanek, Alejandro, V; Holtzl, Tibor; Houssa, Michel; Van de Vondel, Joris; Janssens, Ewald (2022) -
Ballistic heat transport in MoS<sub>2</sub> monolayers
Duflou, Rutger; Houssa, Michel; Afzalian, Aryan (2023) -
Band alignment at interfaces of amorphous Al2O3 with Ge1-xSnx-strained Ge-based channels
Chou, H.-Y; Afanas'ev, Valeri; Houssa, Michel; Stesmans, Andre; Vincent, Benjamin; Gencarelli, Federica; Shimura, Yosuke; Merckling, Clement; Loo, Roger; Nakatsuka, Osamu; Zaima, Shigeaki (2014) -
Band alignment at the interfaces of Al2O3 and ZrO2-based insulators with metals and Si
Afanas'ev, V. V.; Houssa, Michel; Stesmans, Andre; Heyns, Marc (2001) -
Band alignment at the interfaces of Al2O3 and ZrO2-based insulators with metals and Si
Houssa, Michel; Stesmans, Andre; Adriaenssens, G. J.; Heyns, Marc (2002) -
Band alignments in metal-oxide-silicon structures with atomic-layer deposited Al2O3 and ZrO2
Afanas'ev, V. V.; Houssa, Michel; Stesmans, Andre; Heyns, Marc (2002) -
Can silicon behave like graphene? A first-principles study
Houssa, Michel; Pourtois, Geoffrey; Afanasiev, Valeri; Stesmans, Andre (2010) -
Challenges for introducing Ge and III/V devices into CMOS technologies
Heyns, Marc; Alian, AliReza; Brammertz, Guy; Caymax, Matty; Eneman, Geert; Franco, Jacopo; Gencarelli, Federica; Groeseneken, Guido; Hellings, Geert; Hikavyy, Andriy; Houssa, Michel; Kaczer, Ben; Lin, Dennis; Loo, Roger; Merckling, Clement; Meuris, Marc; Mitard, Jerome; Nyns, Laura; Sioncke, Sonja; Vandervorst, Wilfried; Vincent, Benjamin; Waldron, Niamh; Witters, Liesbeth (2012) -
Characterisation of ALCVD ZrO2 thin films by TEM
Richard, Olivier; Bender, Hugo; Houssa, Michel; Zhao, Chao (2001) -
Characterization of (ultra)thin dielectrica
Vandervorst, Wilfried; De Witte, Hilde; Conard, Thierry; Janssens, Tom; Schaekers, Marc; Brijs, Bert; Houssa, Michel (2000) -
Characterization of atomic-beam deposited GeO1-xNx/HfO2 stacks on Ge
Houssa, Michel; Conard, Thierry; Van Steenbergen, Jan; Mavrou, G.; Panayiotatos, Y.; dimoulas, A.; Meuris, Marc; Caymax, Matty; Heyns, Marc (2005) -
Characterization of silicon oxynitride films by grazing-emission X-ray fluorescence spectrometry
Monaghan, M. L.; Nigam, Tanya; Houssa, Michel; De Gendt, Stefan; Urbach, H. P.; De Bokx, P. K. (2000) -
Charge instability of atomic-layer deposited TaSiOx insulators on Si, InP, and In0.53Ga0.47As
Afanasiev, Valeri; Chou, H.Y.; Thoan, N.H.; Adelmann, Christoph; Lin, Dennis; Houssa, Michel; Stesmans, Andre (2012) -
Charge trapping in SiOx/ZrO2 and SiOx/TiO2 gate dielectric stacks
Houssa, Michel; Naili, Mohamed; Heyns, Marc; Stesmans, Andre (2001) -
Charge trapping in SiOx/ZrO2 gate dielectric stacks
Houssa, Michel; Naili, Mohamed; Heyns, Marc; Stesmans, Andre (2000) -
Charge trapping in very thin high-permittivity gate dielectric layers
Houssa, Michel; Stesmans, Andre; Naili, Mohamed; Heyns, Marc (2000) -
Constant voltage stress induced degradation in HfO2/SiO2 gate dielectric stacks
Xu, Zhen; Houssa, Michel; Carter, Richard; Naili, Mohamed; De Gendt, Stefan; Heyns, Marc (2002)