Browsing by author "Takeuchi, Shotaro"
Now showing items 21-40 of 55
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GeSn: future applications and strategy
Loo, Roger; Caymax, Matty; Vincent, Benjamin; Dekoster, Johan; Takeuchi, Shotaro; Nakatsuka, Osamu; Zaima, Shigeaki; Temst, Kristiaan; Vantomme, Andre (2010) -
Growth and characterization of tensile-strained Ge layers on strain relaxed Ge1-xSnx buffer layers
Nakatsuka, O; Takeuchi, Shotaro; Sakai, A; Ogawa, M; Zaima, S (2007) -
Growth of highly strain-relaxed Ge1-xSnx/virtual Ge by a Sn precipitation controlled compositionally step-graded method
Takeuchi, Shotaro; Shimura, Yosuke; Nakatsuka, Osamu; Zaima, Shigeaki; Ogawa, Masaki; Sakai, Akira (2008) -
Heavily doping technology for strained Ge1-xSnx layers
Shimura, Yosuke; Takeuchi, Shotaro; Vincent, Benjamin; Eneman, Geert; Clarysse, Trudo; Vantomme, Andre; Dekoster, Johan; Caymax, Matty; Loo, Roger; Nakatsuka, Osamu; Zaima, Shigeaki (2010) -
Hetero Ge/SI and Si1-xGex/Si nanowires for vertical microelectronics devices
Iacopi, Francesca; Rooyackers, Rita; Vandooren, Anne; Vanherle, Wendy; Takeuchi, Shotaro; Hikavyy, Andriy; Loo, Roger; Milenin, Alexey; Leonelli, Daniele; Arstila, Kai; Bender, Hugo; Caymax, Matty; De Gendt, Stefan; Heyns, Marc (2009) -
High quality and low cost fabrication of virtual Ge substrates on STI patterned Si wafers
Loo, Roger; Wang, Gang; Mitard, Jerome; De Jaeger, Brice; Takeuchi, Shotaro; Eneman, Geert; Lin, Vic; Wang, Wei-E; Meuris, Marc; Caymax, Matty; Heyns, Marc (2009-09) -
High quality Ge virtual substrates on Si wafers with standard STI patterning
Loo, Roger; Wang, Gang; Souriau, Laurent; Lin, Vic; Takeuchi, Shotaro; Brammertz, Guy; Caymax, Matty (2010) -
In-situ Ga doping of fully strained Ge1-xSnx heteroepitaxial layers grown on Ge(001) substrates
Shimura, Y.; Takeuchi, Shotaro; Nakatsuka, O.; Vincent, Benjamin; Gencarelli, Federica; Clarysse, Trudo; Vandervorst, Wilfried; Caymax, Matty; Loo, Roger; Jensen, A.; Petersen, D. H.; Zaima, S. (2012) -
Interface and defect control for group IV channel engineering
Sakai, Akira; Ohara, Yuji; Ueda, Takaya; Toyoda, Eiji; Izunome, Koji; Takeuchi, Shotaro; Shimura, Yosuke; Nakatsuka, Osamu; Ogawa, Masaki; Zaima, Shigeaki; Kimura, Shigeru (2008) -
Interface and defect control for group IV channel engineering
Sakai, Akira; Ohara, Yuji; Ueda, Takaya; Toyoda, Eiji; Izunome, Koji; Takeuchi, Shotaro; Shimura, Yosuke; Nakatsuka, Osamu; Ogawa, Masaki; Zaima, Shigeaki; Kimura, Shigeru (2008) -
Low temperature Si, SiGe, and Ge growth and atomic layer doping with B, P, and As on Si(001) by chemical vapor deposition
Takeuchi, Shotaro; Loo, Roger; Caymax, Matty (2008) -
Marial characterization of Ge1-xSnx alloys for strained Ge CMOS devices
Takeuchi, Shotaro; Shimura, Yosuke; Nishimura, T; Vincent, Benjamin; Eneman, Geert; Clarysse, Trudo; Demeulemeester, Jelle; Temst, Kristiaan; Vantomme, Andre; Dekoster, Johan; Caymax, Matty; Loo, Roger; Nakatsuka, Osamu; Zaima, Shigeaki (2010-10) -
Material assessment for uni-axial strained Ge pMOS -1: characterization of GeSn(B) materials
Vincent, Benjamin; Shimura, Yosuke; Takeuchi, Shotaro; Nishimura, Tsuyoshi; Demeulemeester, Jelle; Eneman, Geert; Clarysse, Trudo; Vandervorst, Wilfried; Vantomme, Andre; Nakatsuka, Osamu; Zaima, Shigeaki; Dekoster, Johan; Caymax, Matty; Loo, Roger (2010) -
Molecular beam passivation of Ge<Sn> compounds: surface, interface & gate stack studies
Merckling, Clement; Sun, X.; Shimura, Y.; Franquet, Alexis; Vincent, Benjamin; Takeuchi, Shotaro; Vandervorst, Wilfried; Nakatsuka, O.; Zaima, S.; Loo, Roger; Caymax, Matty (2011-09) -
Nanowires for microelectronics: realistic perspectives for on-wafer Si-compatible growth and applications
Iacopi, Francesca; Vereecken, Philippe; Eichhammer, Yann; Moelans, Nele; Blanpain, Bart; Rooyackers, Rita; Vandooren, Anne; Vanherle, Wendy; Takeuchi, Shotaro; Hikavyy, Andriy; Loo, Roger; Milenin, Alexey; Arstila, Kai; Bender, Hugo; Caymax, Matty; De Gendt, Stefan; Heyns, Marc (2010) -
Scanning tunneling microscopy observation of initial growth of Sn and Ge1-xSnx layers on Ge(001) substrates
Yamazaki, Masahiro; Takeuchi, Shotaro; Nakatsuka, Osamu; Sakai, Akira; Ogawa, Masaki; Zaima, Shigeaki (2008) -
Seedless templated growth of hetero-nanostructures for novel microelectronics devices
Iacopi, Francesca; Rooyackers, Rita; Loo, Roger; Vanherle, Wendy; Milenin, Alexey; Arstila, Kai; Verhulst, Anne; Takeuchi, Shotaro; Bender, Hugo; Caymax, Matty; Hantschel, Thomas; Vandooren, Anne; Vereecken, Philippe; De Gendt, Stefan; Heyns, Marc (2009) -
Si passivation for Ge pMOSFETs: impact of Si cap growth conditions
Vincent, Benjamin; Loo, Roger; Vandervorst, Wilfried; Delmotte, Joris; Douhard, Bastien; Valev, Ventislav; Vanbel, Maarten; Verbiest, Thierry; Rip, Jens; Brijs, Bert; Conard, Thierry; Claypool, Chris; Takeuchi, Shotaro; Zaima, Shigeaki; Mitard, Jerome; De Jaeger, Brice; Dekoster, Johan; Caymax, Matty (2011) -
(Si)GeSn requirements for optical device applications and solar cells
Takeuchi, Shotaro; Vincent, Benjamin; Temst, Kristiaan; Vantomme, A.; Dekoster, Johan; Caymax, Matty; Loo, Roger; Nakatsuka, Osamu; Zaima, Shigeaki (2010-05) -
Si/SiGe resonant interband tunneling diodes incorporating d-doping layers grown by chemical vapor deposition
Park, SiYoung; Anisha, R.; Berger, Paul; Loo, Roger; Nguyen, Duy; Takeuchi, Shotaro; Caymax, Matty (2009)