Browsing by author "Capogreco, Elena"
Now showing items 21-40 of 48
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Experimental and theoretical verification of channel conductivity degradation due to grain boundaries and defects in 3D NAND
Subirats, Alexandre; Arreghini, Antonio; Capogreco, Elena; Delhougne, Romain; Tan, Chi Lim; Hikavyy, Andriy; Breuil, Laurent; Degraeve, Robin; Putcha, Vamsi; Van den Bosch, Geert; Linten, Dimitri; Furnemont, Arnaud (2017) -
Fabrication challenges and opportunities for high-mobility materials: from CMOS applications to emerging derivative technologies
Collaert, Nadine; Alian, AliReza; De Jaeger, Brice; Peralagu, Uthayasankaran; Vais, Abhitosh; Walke, Amey; Witters, Liesbeth; Yu, Hao; Capogreco, Elena; Devriendt, Katia; Hopf, Toby; Kenis, Karine; Mannaert, Geert; Milenin, Alexey; Peter, Antony; Sebaai, Farid; Teugels, Lieve; van Dorp, Dennis; Wostyn, Kurt; Horiguchi, Naoto; Waldron, Niamh (2019-03) -
Feasibility of InxGa1-xAs high mobility channel for 3-D NAND memory
Capogreco, Elena; Subirats, Alexandre; Lisoni, Judit Gloria; Arreghini, Antonio; Kunert, Bernardette; Guo, Weiming; Tan, Chi Lim; Delhougne, Romain; Van den Bosch, Geert; De Meyer, Kristin; Furnemont, Arnaud; Van Houdt, Jan (2017) -
FinFETs with Thermally Stable RMG Gate Stack for Future DRAM Peripheral Circuits
Capogreco, Elena; Arimura, Hiroaki; Ritzenthaler, Romain; Brus, Stephan; Oniki, Yusuke; Dupuy, Emmanuel; Sebaai, Farid; Radisic, Dunja; Chan, BT; Zhou, Daisy; Machkaoutsan, V.; Yoon, S.; Itokawa, H.; Yamaguchi, M.; Gao, Z.; Fazan, P.; Chen, Y.; Subramanian, Sujith; Ragnarsson, Lars-Ake; Spessot, Alessio; Dentoni Litta, Eugenio (2022) -
First demonstration of vertically stacked gate-all-around highly strained germanium nanowire pFETs
Capogreco, Elena; Witters, Liesbeth; Arimura, Hiroaki; Sebaai, Farid; Porret, Clément; Hikavyy, Andriy; Loo, Roger; Milenin, Alexey; Eneman, Geert; Favia, Paola; Bender, Hugo; Wostyn, Kurt; Dentoni Litta, Eugenio; Schulze, Andreas; Vrancken, Christa; Opdebeeck, Ann; Mitard, Jerome; Langer, Robert; Holsteyns, Frank; Waldron, Niamh; Barla, Kathy; De Heyn, Vincent; Mocuta, Dan; Collaert, Nadine (2018-11) -
First demonstration of vertically-stacked gate-all-around highly-strained germanium nanowire p-FETs
Capogreco, Elena; Witters, Liesbeth; Arimura, Hiroaki; Sebaai, Farid; Porret, Clément; Hikavyy, Andriy; Loo, Roger; Milenin, Alexey; Eneman, Geert; Favia, Paola; Bender, Hugo; Wostyn, Kurt; Dentoni Litta, Eugenio; Schulze, Andreas; Vrancken, Christa; Opdebeeck, Ann; Mitard, Jerome; Langer, Robert; Holsteyns, Frank; Waldron, Niamh; Barla, Kathy; De Heyn, Vincent; Mocuta, Dan; Collaert, Nadine (2018) -
First Monolithic Integration of 3D Complementary FET (CFET) on 300mm Wafers
Subramanian, Sujith; Hosseini, Maryam; Chiarella, Thomas; Sarkar, Satadru; Schuddinck, Pieter; Chan, BT; Radisic, Dunja; Mannaert, Geert; Hikavyy, Andriy; Rosseel, Erik; Sebaai, Farid; Peter, Antony; Hopf, Toby; Morin, Pierre; Wang, Shouhua; Devriendt, Katia; Batuk, Dmitry; Martinez Alanis, Gerardo Tadeo; Veloso, Anabela; Dentoni Litta, Eugenio; Baudot, Sylvain; Siew, Yong Kong; Zhou, X.; Briggs, Basoene; Capogreco, Elena; Hung, Joey; Koret, R.; Spessot, Alessio; Ryckaert, Julien; Demuynck, Steven; Horiguchi, Naoto; Boemmels, Juergen (2020) -
Gate-First High-k/Metal Gate FinFET for advanced DRAM peripheral transistors
Dupuy, Emmanuel; Capogreco, Elena; Dentoni Litta, Eugenio; Tao, Zheng; Sebaai, Farid; Spessot, Alessio; Horiguchi, Naoto (2022-09-20) -
Ge oxide scavenging and gate stack nitridation for strained Si0.7Ge0.3 pFinFETs enabling 35% higher mobility than Si
Arimura, Hiroaki; Wostyn, Kurt; Ragnarsson, Lars-Ake; Capogreco, Elena; Vaisman Chasin, Adrian; Conard, Thierry; Brus, Stephan; Favia, Paola; Franco, Jacopo; Mitard, Jerome; Demuynck, Steven; Horiguchi, Naoto (2019) -
Ge:B and GeSn:B low temperature selective epitaxial growth schemes for source/drain layers in Ge pMOS devices
Vohra, Anurag; Porret, Clément; Kohen, David; Folkersma, Steven; Bogdanowicz, Janusz; Schaekers, Marc; Tolle, John; Hikavyy, Andriy; Capogreco, Elena; Witters, Liesbeth; Langer, Robert; Vandervorst, Wilfried; Loo, Roger (2018) -
Ge:B and GeSn:B low temperature selective epitaxial growth schemes for source/drain layers in Ge pMOS devices
Vohra, Anurag; Porret, Clément; Kohen, David; Folkersma, Steven; Bogdanowicz, Janusz; Schaekers, Marc; Tolle, John; Hikavyy, Andriy; Capogreco, Elena; Witters, Liesbeth; Langer, Robert; Vandervorst, Wilfried; Loo, Roger (2019) -
High performance strained Germanium Gate All Around p-channel devices with excellent electrostatic control for sub-30 nm Lg
Capogreco, Elena; Arimura, Hiroaki; Vohra, Anurag; Porret, Clément; Loo, Roger; De Keersgieter, An; Dupuy, Emmanuel; Marinov, Daniil; Hikavyy, Andriy; Sebaai, Farid; Mannaert, Geert; Ragnarsson, Lars-Ake; Siew, Yong Kong; Vrancken, Christa; Opdebeeck, Ann; Mitard, Jerome; Langer, Robert; Altamirano Sanchez, Efrain; Holsteyns, Frank; Demuynck, Steven; Barla, Kathy; De Heyn, Vincent; Mocuta, Dan; Collaert, Nadine; Horiguchi, Naoto (2019) -
Integration and electrical evaluation of Epi-Si and Epi-SiGe channels for 3D NAND memory applications
Capogreco, Elena; Degraeve, Robin; Lisoni, Judit; Luong, Vu; Arreghini, Antonio; Toledano Luque, Maria; Hikavyy, Andriy; Numata, Toshinori; De Meyer, Kristin; Van den Bosch, Geert; Van Houdt, Jan (2015) -
Investigation of conduction variability in MOVPE In1-xGaxAs channels for vertical NAND memory
Capogreco, Elena; Arreghini, Antonio; Lisoni, Judit Gloria; Kunert, Bernardette; Guo, Weiming; De Meyer, Kristin; Van den Bosch, Geert; Van Houdt, Jan; Furnemont, Arnaud (2016) -
Laser thermal anneal of polysilicon channel to boost 3D memory performance
Lisoni, Judit; Arreghini, Antonio; Congedo, Gabriele; Toledano Luque, Maria; Toqué-Trésonne, Inès; Huet, Karim; Capogreco, Elena; Liu, Lifang; Tan, Chi Lim; Degraeve, Robin; Van den Bosch, Geert; Van Houdt, Jan (2014) -
Low temperature Ge:B and GeSn:B source/drain for Ge pMOS devices: in-situ and conformal B-doping, selectivity towards oxide & nitride with no need for any post-epi activation treatment
Vohra, Anurag; Porret, Clément; Kohen, David; Folkersma, Steven; Bogdanowicz, Janusz; Schaekers, Marc; Tolle, John; Hikavyy, Andriy; Capogreco, Elena; Witters, Liesbeth; Langer, Robert; Vandervorst, Wilfried; Loo, Roger (2019-03) -
MOVPE In1-xGaxAs high mobility channel for 3-D NAND memory
Capogreco, Elena; Lisoni, Judit; Arreghini, Antonio; Subirats, Alexandre; Kunert, Bernardette; Guo, Weiming; Maurice, Thibaut; Tan, Chi Lim; Degraeve, Robin; De Meyer, Kristin; Van den Bosch, Geert; Van Houdt, Jan (2015) -
Nanobeam diffraction strain analysis of released Ge gate-all-around nano-wires: challenges and limitations
Favia, Paola; Witters, Liesbeth; Capogreco, Elena; Vancoille, Eric; Bender, Hugo (2018) -
NH3 PDA Temperature-Impact on Low-Frequency Noise Behavior of Si0.7Ge0.3 pFinFETs
Xie, Duan; Simoen, Eddy; Arimura, Hiroaki; Capogreco, Elena; Mitard, Jerome; Horiguchi, Naoto (2022) -
SiGe channel formation for 3D vertical channel transistor applications
Capogreco, Elena; Lisoni, Judit; Hikavyy, Andriy; Arreghini, Antonio; Vecchio, Emma; Numata, Toshinori; Tan, Chi Lim; De Meyer, Kristin; Van den Bosch, Geert; Van Houdt, Jan (2014)