Browsing by author "Lujan, Guilherme"

Now showing items 21-31 of 31

    • Modelling mobility degradation due to remote Coulomb scattering from dielectric charges and its impact on MOS device performance 

      Lujan, Guilherme; Magnus, Wim; Ragnarsson, Lars-Ake; Kubicek, Stefan; De Gendt, Stefan; Heyns, Marc; De Meyer, Kristin (2005)

    • Molecular beam epitaxy for advanced gate stack materials and processes 

      Locquet, Jean-Pierre; Marchiori, Chiara; Sousa, M.; Siegwart, H.; Caimi, D.; Fompeyrine, Jean; Pantisano, Luigi; Claes, Martine; Conard, Thierry; Demand, Marc; Deweerd, Wim; De Gendt, Stefan; Heyns, Marc; Houssa, Michel; Aoulaiche, Marc; Lujan, Guilherme; Ragnarsson, Lars-Ake; Rohr, Erika; Schram, Tom; Hooker, Jacob; Rittersma, Chris; Furukawa, Yukiko; Seo, J.W.; dimoulas, A. (2005)

    • MOSFET with La2HfO7 and HfO2 high-k dielectrics integrated in a conventional flow 

      Pantisano, Luigi; Conard, Thierry; Claes, Martine; Demand, Marc; Deweerd, Wim; De Gendt, Stefan; Heyns, Marc; Houssa, Michel; Aoulaiche, Marc; Lujan, Guilherme; Ragnarsson, Lars-Ake; Rohr, Erika; Schram, Tom; Hooker, Jacob; Rittersma, Chris; Fompereyne, Jean; Locquet, Jean-Pierre; dimoulas, A. (2005)

    • On the thermal stability of atomic layer deposited TiN as gate electrode in MOS devices 

      Westlinder, J.; Schram, Tom; Pantisano, Luigi; Cartier, Eduard; Kerber, Andreas; Lujan, Guilherme; Olsson, J.; Groeseneken, Guido (2003)

    • On the thermal stability of Atomic Layer Deposition (ALD) TiN as gate electrode in MOS devices 

      Westlinder, J.; Schram, T.; Pantisano, Luigi; Cartier, Eduard; Kerber, Andreas; Lujan, Guilherme; Groeseneken, Guido (2002)

    • Performance improvement of self-aligned HfO2/TaN and SiON/TaN nMOS transistors 

      Schram, Tom; Ragnarsson, Lars-Ake; Lujan, Guilherme; Deweerd, Wim; Chen, Jerry; Tsai, Wilman; Henson, Kirklen; Lander, Rob; Hooker, Jacob; Vertommen, Johan; De Meyer, Kristin; De Gendt, Stefan; Heyns, Marc (2005-03)

    • Scalability of MOCVD-deposited Hafnium oxide 

      Van Elshocht, Sven; Carter, Richard; Caymax, Matty; Claes, Martine; Conard, Thierry; Date, Lucien; De Gendt, Stefan; Kaushik, Vidya; Kerber, Andreas; Kluth, J.; Lujan, Guilherme; Petry, Jasmine; Pique, Didier; Richard, Olivier; Rohr, Erika; Shimamoto, Yasuhiro; Tsai, Wilman; Heyns, Marc (2003)

    • Scaling of Hf-based high-k dielectrics 

      Heyns, Marc; Beckx, Stephan; Caymax, Matty; Chen, J.; Claes, Martine; Coenegrachts, Bart; De Gendt, Stefan; Degraeve, R.; Delabie, Annelies; Deweerd, Wim; Groeseneken, Guido; Hayashi, Shigenori; Henson, Kirklen; Hooker, Jacob; Houssa, Michel; Kauerauf, Thomas; Kerber, A.; Kwak, Dong Hwa; Lander, Rob; Lujan, Guilherme; Niwa, Masaaki; Pantisano, Luigi; Puurunen, Riikka; Ragnarsson, Lars-Ake; Rohr, Erika; Schram, Tom; Shimamoto, Y.; Tsai, Wilman; Van Elshocht, Sven; Vertommen, Johan; Vandervorst, Wilfried; Kubicek, Stefan (2004)

    • Scaling of high-k dielectrics towards sub-1nm EOT 

      Heyns, Marc; Beckx, Stephan; Bender, Hugo; Blomme, Pieter; Boullart, Werner; Brijs, Bert; Carter, Richard; Caymax, Matty; Claes, Martine; Conard, Thierry; De Gendt, Stefan; Degraeve, Robin; Delabie, Annelies; Deweerd, Wim; Groeseneken, Guido; Henson, Kirklen; Kauerauf, Thomas; Kubicek, Stefan; Lucci, Luca; Lujan, Guilherme; Mentens, Jimmy; Pantisano, Luigi; Petry, Jasmine; Richard, Olivier; Röhr, Erika; Schram, Tom; Vandervorst, Wilfried; Van Doorne, Patrick; Van Elshocht, Sven; Westlinder, Jörgen; Witters, Thomas; Zhao, Chao; Cartier, Eduard; Chen, Jerry; Cosnier, Vincent; Green, Martin; Jang, Se Aug; Kaushik, Vidya; Kerber, Andreas; Kluth, Jon; Lin, Steven; Tsai, Wilman; Young, Edward; Manabe, Yukiko; Shimamoto, Yasuhiro; Bajolet, Philippe; De Witte, Hilde; Maes, Jan; Date, Lucien; Pique, Didier; Coenegrachts, Bart; Vertommen, Johan; Passefort, Sophie (2003)

    • Selective epitaxial Si/SiGe growth for VT shift adjustment in high k pMOS devices 

      Loo, Roger; Sorada, Haruyuki; Inoue, Akira; Lee, B.C; Hyun, Sangjin; Jakschik, Stefan; Lujan, Guilherme; Hoffmann, Thomas Y.; Caymax, Matty (2007)

    • TaN metal gate MOSFETs with agressively scaled HfO2 dielectrics 

      Lander, Rob; Schram, Tom; Lujan, Guilherme; Hooker, Jacob; Vertommen, Johan; Lee, S.; Deweerd, Wim; Boullart, Werner; Van Elshocht, Sven; Carter, Richard; Kubicek, Stefan; De Meyer, Kristin; De Gendt, Stefan; Heyns, Marc (2003)