Browsing by author "Marcon, Denis"
Now showing items 21-40 of 110
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Device breakdown optimization of Al2O3/GaN E-mode MISFETs
Kang, Xuanwu; Wellekens, Dirk; Van Hove, Marleen; De Jaeger, Brice; Ronchi, Nicolo; Wu, Tian-Li; You, Shuzhen; Bakeroot, Benoit; Hu, Jie; Marcon, Denis; Stoffels, Steve; Decoutere, Stefaan (2016) -
Direct comparison of GaN-based e-mode architectures (recessed MISHEMT and p-GaN HEMTs) processed on 200mm GaN-on-Si with Au-free technology
Marcon, Denis; Van Hove, Marleen; De Jaeger, Brice; Posthuma, Niels; Wellekens, Dirk; You, Shuzhen; Kang, Xuanwu; Wu, Tian-Li; Willems, Maarten; Stoffels, Steve; Decoutere, Stefaan (2015) -
Dispersion free high voltage III-N buffer development on 200 mm silicon for power electronics
Saripalli, Yoga; Zhao, Ming; Liang, Hu; Kandaswamy, Prem Kumar; Novak, Tomas; Van Hove, Marleen; Stoffels, Steve; De Jaeger, Brice; Posthuma, Niels; Marcon, Denis; Decoutere, Stefaan; Langer, Robert (2015) -
Electroluminescence analysis of time-dependent reverse-bias degradation of HEMTs: a complete model
Meneghini, Matteo; Stocco, Antonio; Bertini, Marco; Ronchi, Nicolò; Chini, Alessandro; Marcon, Denis; Meneghesso, Gaudenzio; Zanoni, Enrico (2011) -
Enhancement of GaN-based device robustness by means of in-situ SiN cap layer
Medjdoub, Farid; Marcon, Denis; Cheng, Kai; Van Hove, Marleen; Leys, Maarten; Decoutere, Stefaan (2010) -
Epitaxial growth by MOCVD on 200 mm engineered substrates for power devices & ICs beyond 650 V
Fahle, Dirk; Zhao, Ming; Geens, Karen; Li, Xiangdong; Wellekens, Dirk; Magnani, Alessandro; Amirifar, Nooshin; Bakeroot, Benoit; You, Shuzhen; Odnoblyudov, Vladimir; Aktas, Ozgur; Basceri, Cem; Marcon, Denis; Groeseneken, Guido; Decoutere, Stefaan; Hahn, Herwig; Heuken, Michael (2019) -
Evidence of time-dependent vertical breakdown in GaN-on-Si HEMTs
Borga, Matteo; Meneghini, Matteo; Rossetto, Isabella; Stoffels, Steve; Posthuma, Niels; Van Hove, Marleen; Marcon, Denis; Decoutere, Stefaan; Meneghesso, Gaudenzio; Zanoni, Enrico (2017) -
Excellent stability of GaN-on-Si HEMTs with 5 μm gate-drain spacing tested in off-state at a record drain voltage of 200V and 200°C
Marcon, Denis; Van Hove, Marleen; Visalli, Domenica; Derluyn, Joff; Das, Jo; Medjdoub, Farid; Degroote, Stefan; Leys, Maarten; Cheng, Kai; Mertens, Robert; Germain, Marianne; Borghs, Gustaaf (2009) -
Excellent stability of GaN-on-Si high electron mobility transistors with 5 μm gate/drain spacing tested in off-state at a record drain voltage of 200 V and 200 °C
Marcon, Denis; Van Hove, Marleen; Visalli, Domenica; Derluyn, Joff; Das, Jo; Medjdoub, Farid; Degroote, Stefan; Leys, Maarten; Cheng, Kai; Mertens, Robert; Germain, Marianne; Borghs, Gustaaf (2010) -
Failure mode for p-GaN gates under forward gate stress with varying Mg concentration
Stoffels, Steve; Bakeroot, Benoit; Wu, Tian-Li; Marcon, Denis; Posthuma, Niels; Decoutere, Stefaan; Tallarico, A.N.; Fiegna, C. (2017) -
Field-effect saccharide sensing using AlGaN/GaN heterostructures and boronic acid based chemical receptors
Schuller, Tim A.; Kuball, Martin; Flower, Stephen E.; James, Tony D.; Fossey, John S.; Marcon, Denis; Das, Jo; Degroote, Stefan; Germain, Marianne; Sarua, Andrei (2011) -
Forward bias gate breakdown mechanism in enhancement-mode p-GaN gate AlGaN/GaN high-electron mobility transistors
Wu, Tian-Li; Marcon, Denis; You, Shuzhen; Posthuma, Niels; Bakeroot, Benoit; Stoffels, Steve; Van Hove, Marleen; Groeseneken, Guido; Decoutere, Stefaan (2015) -
Forward gate bias on-state stress on AlGaN/GaN MIS-HEMTs for power switching applications
Wu, Tian-Li; Marcon, Denis; Zahid, Mohammed; Van Hove, Marleen; Stoffels, Steve; Srivastava, Puneet; Decoutere, Stefaan; Groeseneken, Guido (2012) -
From TCAD device simulation to scalable compact model
Stoffels, Steve; Erlebach, Axel; Tommaso, Cilento; Strauss, Stephan; De Jaeger, Brice; Ronchi, Nicolo; Marcon, Denis; Decoutere, Stefaan (2013-10) -
Gallium nitride epitaxy on large area silicon substrates for power and optoelectronic applications
Saripalli, Yoga; Marcon, Denis (2015) -
GaN buffer design: electrical characterization and prediction of the effect of deep level centers in GaN/AlGaN HEMTS
Silvestri, Marco; Michael, Uren; Marcon, Denis; Kuball, Martin (2013) -
GaN-based HEMTs tested under high temperature storage test
Marcon, Denis; Kang, Xuanwu; Viaene, John; Van Hove, Marleen; Srivastava, Puneet; Decoutere, Stefaan; Mertens, Robert; Borghs, Gustaaf (2011) -
GaN-on-Si for high-voltage applications
Visalli, Domenica; Van Hove, Marleen; Srivastava, Puneet; Marcon, Denis; Geens, Karen; Kang, Xuanwu; Vandenplas, Erwin; Viaene, John; Leys, Maarten; Cheng, Kai; Sijmus, Bram; Decoutere, Stefaan; Borghs, Gustaaf (2011) -
GaN-on-Si for high-voltage applications
Visalli, Domenica; Van Hove, Marleen; Srivastava, Puneet; Marcon, Denis; Geens, Karen; Kang, Xuanwu; Vandenplas, Erwin; Viaene, John; Leys, Maarten; Cheng, Kai; Sijmus, Bram; Decoutere, Stefaan; Borghs, Gustaaf (2011) -
GaN-on-Si for power conversion
Germain, Marianne; Derluyn, Joff; Van Hove, Marleen; Medjdoub, Farid; Das, Jo; Marcon, Denis; Degroote, Stefan; Cheng, Kai; Leys, Maarten; Visalli, Domenica; Srivastava, Puneet; Geens, Karen; Viaene, John; Sijmus, Bram; Decoutere, Stefaan; Borghs, Gustaaf (2010)