Browsing by author "Rip, Jens"
Now showing items 41-57 of 57
-
Si passivation for Ge pMOSFETs: impact of Si cap growth conditions
Vincent, Benjamin; Loo, Roger; Vandervorst, Wilfried; Delmotte, Joris; Douhard, Bastien; Valev, Ventislav; Vanbel, Maarten; Verbiest, Thierry; Rip, Jens; Brijs, Bert; Conard, Thierry; Claypool, Chris; Takeuchi, Shotaro; Zaima, Shigeaki; Mitard, Jerome; De Jaeger, Brice; Dekoster, Johan; Caymax, Matty (2011) -
Si passivation for Ge pMOSFETs: influence of Si precursor during RPCVD growth
Vincent, Benjamin; Loo, Roger; Vandervorst, Wilfried; Brammertz, Guy; Mitard, Jerome; De Jaeger, Brice; Valev, V.; Verbiest, T.; Takeuchi, S.; Zaima, S.; Rip, Jens; Brijs, Bert; Conard, Thierry; Caymax, Matty (2010) -
SiGe vs. Si selective wet etchingfor Si gate-all-around
Komori, Kana; Rip, Jens; Yoshida, Yukifumi; Wostyn, Kurt; Sebaai, Farid; Liu, Wen Dar; Lee, Yi Chia; Sekiguchi, Ryo; Mertens, Hans; Hikavyy, Andriy; Holsteyns, Frank; Horiguchi, Naoto (2018) -
Smooth and high quality epitaxial strained Ge grown on SiGe strain relaxed buffers with 70 - 85% Ge
Loo, Roger; Souriau, Laurent; Ong, Patrick; Kenis, Karine; Rip, Jens; Storck, Peter; Buschhardt, Thomas; Vorderwester, Martin (2010-05) -
Smooth and high quality epitaxial strained Ge grown on siGe strain relaxed buffers with 70-80% Ge
Loo, Roger; Souriau, Laurent; Ong, Patrick; Kenis, Karine; Rip, Jens; Peter, Storck; Buschhardt, Thomas; Vorderwestner, Martin (2011) -
Spin-on wafer contamination evaluated with TXRF and SIMS
Erhke, Hans Ulrich; Sears, Adam; Greithanner, Stefan; Van Hoeymissen, Jan; Rip, Jens (2007) -
State-of-the art cleaning in semiconductor manufacturing
Mertens, Paul; Arnauts, Sophia; Bearda, Twan; Eitoku, Atsuro; Fyen, Wim; Hellin, David; Holsteyns, Frank; Kesters, Els; Kraus, Harald; Lee, Kuntack; Onsia, Bart; Rip, Jens; Schmidt, H.; Snow, Jim; Teerlinck, Ivo; Vereecke, Guy; Vos, Rita; Xu, Kaidong; Heyns, Marc (2003) -
Study of the anisotropic wet etching of nanoscale structures in alkaline solutions
Pacco, Antoine; Aabdin, Zainul; Anand, Utkarsh; Rip, Jens; Mirsaidov, Utkur; Holsteyns, Frank (2018) -
Study of the etching mechanism of heavily doped Si in HF
Valckx, Nick; Cuypers, Daniel; Vos, Rita; Philipsen, Harold; Rip, Jens; Doumen, Geert; Mertens, Paul; Heyns, Marc; De Gendt, Stefan (2010) -
Studying the efficacy of hydrogen plasma treatment for enabling the etching of thermally annealed ruthenium in chemical solutions
Le, Quoc Toan; Arslan, Esen; Rip, Jens; De Coster, Hanne; Verdonck, Patrick; Radisic, Dunja; Schleicher, Filip; Vaesen, Inge; Conard, Thierry; Altamirano Sanchez, Efrain (2023) -
Total reflection X-ray fluorescence spectrometry for the introduction of novel materials in clean room production environments
Hellin, David; De Gendt, Stefan; Rip, Jens; Vinckier, Chris (2005-12) -
TXRF layer analysis for advanced micro-electronic applications: a two case study, HfO2/Si and Si/Ge
Hellin, David; Rip, Jens; Delabie, Annelies; Bonzom, Renaud; De Gendt, Stefan; Vinckier, Chris (2005) -
Validatie van methoden voor metaalcontaminatie analysemethoden op halfgeleidersubstraten
Hellin, David; Rip, Jens; Arnauts, Sophia; Mertens, Paul; De Gendt, Stefan; Vinckier, Chris (2004) -
Validation of vapor phase decomposition - droplet collection - total reflection X-ray fluorescence spectrometry for metallic contamination analysis of silicon wafers
Hellin, David; Rip, Jens; Arnauts, Sophia; De Gendt, Stefan; Mertens, Paul; Vinckier, Chris (2004-09) -
VPD-DC-TXRF for metallic contamination analysis of Ge wafers
Hellin, David; Geens, V.; Teerlinck, Ivo; Van Steenbergen, Jan; Rip, Jens; Laureyn, Wim; Raskin, Geoffroy; Mertens, Paul; De Gendt, Stefan; Vinckier, Chris (2005) -
Wet selective SiGe etch to enable Ge nanowire formation.
Sebaai, Farid; Witters, Liesbeth; Holsteyns, Frank; Wostyn, Kurt; Rip, Jens; Yukifumi, Yoshida; Lieten, Ruben; Bilodeau, Steven; Cooper, Emanuel (2016) -
Wet-chemical etching of InGaAs for advanced CMOS processing
van Dorp, Dennis; Arnauts, Sophia; Cuypers, Daniel; Rip, Jens; Holsteyns, Frank; De Gendt, Stefan (2013)