Browsing by author "Bender, Hugo"
Now showing items 61-80 of 736
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Bulk micro defects of p/p epitaxial silicon wafers with nitrogen doped substrates and their gettering behavior
Schmolke, R.; Blietz, M.; Hölzl, R.; Menzel, D.; Bender, Hugo (2002) -
Calibrated boron doped tip fabrication
Hantschel, Thomas; Zimmer, Jerry; Schulze, Andreas; Eyben, Pierre; Tsigkourakos, Menelaos; Richard, Olivier; Bender, Hugo; Vandervorst, Wilfried (2011) -
Can carbon nanotubes be preserved during FIB preparation of TEM samples?
Ke, Xiaoxing; Bals, Sara; Van Tenderloo, Gustaaf; Romo Negreira, Ainhoa; Hantschel, Thomas; Bender, Hugo (2008) -
Capping-metal gate integration technology for multiple-VT CMOS in MuGFETs
Veloso, Anabela; Witters, Liesbeth; Demand, Marc; Ferain, Isabelle; Son, Nak Jin; Kaczer, Ben; Roussel, Philippe; Adelmann, Christoph; Brus, Stephan; Richard, Olivier; Bender, Hugo; Conard, Thierry; Vos, Rita; Rooyackers, Rita; Van Elshocht, Sven; Collaert, Nadine; De Meyer, Kristin; Biesemans, Serge; Jurczak, Malgorzata (2008) -
Carbon nanotubes grown in contact holes for nano electronic applications: how to prepare TEM samples by FIB?
Ke, Xiaoxing; Bals, Sara; Romo Negreira, Ainhoa; Hantschel, Thomas; Bender, Hugo; Van Tendeloo, Gustaaf (2008-09) -
Channeled ion beam synthesis: a new technique to form epitaxial rare-earth silicides with high quality
Wu, Ming Fang; Vantomme, Andre; Pattyn, Hugo; Langouche, H.; Bender, Hugo (1996) -
Channeled ion beam synthesis: a new technique to form high-quality rare-earth silicides
Vantomme, Andre; Wu, Ming Fang; Wahl, U.; De Wachter, J.; Degroote, S.; Pattyn, Hugo; Langouche, H.; Bender, Hugo (1996) -
Channeled ion beam synthesis: a new technique to form high-quality rare-earth silicides
Vantomme, Andre; Wu, Ming Fang; Wahl, U.; Pattyn, Hugo; Langouche, H.; Bender, Hugo (1996) -
Characterisation of ALCVD ZrO2 thin films by TEM
Richard, Olivier; Bender, Hugo; Houssa, Michel; Zhao, Chao (2001) -
Characterisation of JSR's spin-on hardmask FF-02
Das, Arabinda; Le, Quoc Toan; Furukawa, Yukiko; Nguyen Hoang, Viet; Terzieva, Valentina; de Theije, Femke; Whelan, Caroline; Maenhoudt, Mireille; Struyf, Herbert; Tokei, Zsolt; Iacopi, Francesca; Stucchi, Michele; Carbonell, Laure; Vos, Ingrid; Bender, Hugo; Patz, M.; Beyer, Gerald; Van Hove, Marleen; Maex, Karen (2003) -
Characterisation of the local stress in CoSi2 silicided shallow trench isolation structures
Stuer, Cindy; Steegen, An; Bender, Hugo; Van Landuyt, J.; Maex, Karen (2001) -
Characterisation of tungsten nitride barrier layer for copper metallisation
Jin, S.; Li, H.; Bender, Hugo; Heyvaert, Ilse; Maex, Karen (1999) -
Characterization and barrier properties for Cu metallization of tungsten nitride deposited by PECVD using WF6 +N2 +H2
Li, Hua; Heyvaert, Ilse; Sing, Jin; Lanckmans, Filip; Brijs, Bert; Bender, Hugo; Maex, Karen; Froyen, L. (1999) -
Characterization and barrier properties for Cu metallization of tungsten nitride deposited by PECVD using WF6+N2+H2
Li, H.; Heyvaert, Ilse; Jin, S.; Lanckmans, Filip; Bender, Hugo; Maex, Karen; Froyen, L. (1998) -
Characterization of a FinFET 6T-SRAM cell by tomography
Richard, Olivier; Demuynck, Steven; Veloso, Anabela; Van Marcke, Patricia; Bender, Hugo (2010) -
Characterization of a FinFET 6T-SRAM cell by tomography
Richard, Olivier; Demuynck, Steven; Veloso, Anabela; Van Marcke, Patricia; Bender, Hugo (2009) -
Characterization of boron-doped diamond films for application in nanoscale electrical measurements
Hantschel, Thomas; Zimmer, Jerry; Moussa, Alain; Olanterae, Lauri; Clemente, Francesca; Geypen, Jef; Bender, Hugo; Vandervorst, Wilfried (2010) -
Characterization of epitaxial Si:C:P and SI:P layers for source/drain formation in advanced bulk FinFETs
Rosseel, Erik; Profijt, Harald; Hikavyy, Andriy; Tolle, John; Kubicek, Stefan; Mannaert, Geert; L'abbe, Caroline; Wostyn, Kurt; Horiguchi, Naoto; Clarysse, Trudo; Parmentier, Brigitte; Dhayalan, Sathish Kumar; Bender, Hugo; Maes, Jan; Mehta, Sandeep; Loo, Roger (2014-10) -
Characterization of epitaxial Si:C:P and Si:P layers for source/drain formation in advanced bulk finFETs
Rosseel, Erik; Profijt, Harald; Hikavyy, Andriy; Tolle, John; Kubicek, Stefan; Mannaert, Geert; L'abbe, Caroline; Wostyn, Kurt; Horiguchi, Naoto; Clarysse, Trudo; Parmentier, Brigitte; Dhayalan, Sathish Kumar; Bender, Hugo; Maes, Jan Willem; Loo, Roger (2014-10) -
Characterization of high-k dielectrics by combined spectroscopic ellipsometry (SE) and x-ray reflectometry (XRR)
Sun, L.; Defranoux, C.; Stehlé, J.L.; Boher, P.; Evrard, P.; Bellandi, E.; Bender, Hugo (2004)