Browsing by author "Bender, Hugo"
Now showing items 41-60 of 736
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Analysis of Iddq failures through spectral photon emission microscopy
Rasras, Mahmoud; De Wolf, Ingrid; Bender, Hugo; Groeseneken, Guido; Maes, Herman; Verhaverbeke, Steven; De Pauw, P. (1998) -
Analysis of Iddq failures through spectral photon emission microscopy
Rasras, Mahmoud; De Wolf, Ingrid; Bender, Hugo; Groeseneken, Guido; Maes, Herman; Verhaverbeke, Steven; De Pauw, P. (1998) -
Analytical characterization of new high k dielectric stacks
De Witte, Hilde; Conard, Thierry; Bender, Hugo; Vandervorst, Wilfried (2000) -
Anisotropic biaxial stress measurements in finFET channels through nano-focused raman spectroscopy
Nuytten, Thomas; Jamal, Muhammad Tahir; Hantschel, Thomas; Bogdanowicz, Janusz; Schulze, Andreas; Favia, Paola; Bender, Hugo; De Wolf, Ingrid; Vandervorst, Wilfried (2016) -
Anisotropic stress in narrow sGe fin field-effect transistor channels measured using nano-focused Raman spectroscopy
Nuytten, Thomas; Bogdanowicz, Janusz; Witters, Liesbeth; Eneman, Geert; Hantschel, Thomas; Schulze, Andreas; Favia, Paola; Bender, Hugo; De Wolf, Ingrid; Vandervorst, Wilfried (2018) -
Application of FIB to support semiconductor process development
Bender, Hugo (2004-08) -
Application of focused ion beam for failure analysis
Bender, Hugo (2000) -
Application of focused ion beam for failure analysis
Bender, Hugo (2000) -
Aqueous chemical solution deposition of ultrathin lanthanide oxide dielectric films
Hardy, An; Van Elshocht, Sven; D'Haen, Jan; Douheret, Olivier; De Gendt, Stefan; Adelmann, Christoph; Caymax, Matty; Conard, Thierry; Witters, Thomas; Bender, Hugo; Richard, Olivier; Heyns, Marc; D'Olieslaeger, Marc; Van Bael, Marlies; Mullens, J. (2007) -
Assessing the prospects of atomic layer deposition for two-dimensional materials in microelectronic applications
Groven, Benjamin; Tomczak, Yoann; Nalin Mehta, Ankit; Bender, Hugo; Zhang, Haodong; Schram, Tom; Smets, Quentin; Heyns, Marc; Caymax, Matty; Radu, Iuliana; Delabie, Annelies (2018) -
Atomic layer deposition of 2D transition metal dichalogenides
Delabie, Annelies; Caymax, Matty; Groven, Benjamin; Heyne, Markus; Haesevoets, Karel; Meersschaut, Johan; Nuytten, Thomas; Bender, Hugo; Conard, Thierry; Verdonck, Patrick; Van Elshocht, Sven; Heyns, Marc; Barla, Kathy; Radu, Iuliana; Thean, Aaron (2015-10) -
Atomic layer deposition of hafnium oxide on Ge and GaAs substrates: precursors and surface preparation
Delabie, Annelies; Brunco, David; Conard, Thierry; Favia, Paola; Bender, Hugo; Franquet, Alexis; Sioncke, Sonja; Vandervorst, Wilfried; Van Elshocht, Sven; Heyns, Marc; Meuris, Marc; Kim, Eunji; McIntyre, Paul C.; Saraswat, Krishna C.; LeBeau, James M.; Cagnon, Joel; Stemmer, Susanne; Tsai, Wilman (2008) -
Atomic layer deposition of ruthenium thin films from (ethylbenzyl) (1-ethyl-1,4-cyclohexadienyl) Ru: process characteristics, surface chemistry, and film properties
Popovici, Mihaela Ioana; Groven, Benjamin; Marcoen, Kristof; Phung, Quan; Dutta, Shibesh; Swerts, Johan; Meersschaut, Johan; Van den Berg, Jaap; Franquet, Alexis; Moussa, Alain; Vanstreels, Kris; Lagrain, Pieter; Bender, Hugo; Jurczak, Gosia; Van Elshocht, Sven; Delabie, Annelies; Adelmann, Christoph (2017) -
Atomic-scale investigations on the wet etching kinetics of Ge versus SiGe in acidic H2O2 solutions: a post operando synchrotron XPS analysis
Abrenica, Graniel; Lebedev, Mikhail; Fingerle, Mathias; Arnauts, Sophia; Bazzazian, Nina; Calvet, Wolfram; Porret, Clément; Bender, Hugo; Mayer, Thomas; De Gendt, Stefan; van Dorp, Dennis (2020) -
Automated quantification of dimensions on tomographic reconstructions of semiconductor devices
Kalio, Andre; Richard, Olivier; Sourty, Erwan; Bender, Hugo (2007) -
Backscattering/channeling study of high dose rare-earth implants in Si
Vantomme, Andre; Wu, Ming Fang; Wahl, U.; Pattyn, Hugo; Bender, Hugo; Langouche, G. (1997) -
Backscattering/channeling study of high-dose rare-earth implants into Si
Vantomme, Andre; Wahl, U.; Wu, Ming Fang; Hogg, S.; Pattyn, Hugo; Langouche, G.; Bender, Hugo (1998) -
Beyond interface: the impact of oxide border traps on InGaAs and Ge n-MOSFETs
Lin, Dennis; Alian, AliReza; Gupta, S.; Yang, B.; Bury, Erik; Sioncke, Sonja; Degraeve, Robin; Toledano Luque, Maria; Krom, Raymond; Favia, Paola; Bender, Hugo; Caymax, Matty; Saraswat, K.C.; Collaert, Nadine; Thean, Aaron (2012) -
Biaxial and uniaxial compressive stress implemanted in Ge(Sn) pMOSFET channels by advanced reduced pressure chemical vapor deposition developments
Vincent, Benjamin; Gencarelli, Federica; Lin, Dennis; Nyns, Laura; Richard, Olivier; Bender, Hugo; Merckling, Clement; Witters, Liesbeth; Loo, Roger; Caymax, Matty; Heyns, Marc (2011) -
Biaxial and uniaxial compressive stress implemanted in Ge(Sn) pMOSFET channels by advanced reduced pressure chemical vapor deposition developments
Vincent, Benjamin; Gencarelli, Federica; Lin, Dennis; Nyns, Laura; Richard, Olivier; Bender, Hugo; Douhard, Bastien; Moussa, Alain; Merckling, Clement; Witters, Liesbeth; Vandervorst, Wilfried; Loo, Roger; Caymax, Matty; Heyns, Marc (2011)