Browsing imec Publications by imec author "71b89e915792bbfe9fa9298dbedd09c1c84a50cf"
Now showing items 1-20 of 127
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18% efficiency IBC cell with rear-surface processed on quartz
Dross, Frederic; O'Sullivan, Barry; Debucquoy, Maarten; Bearda, Twan; Govaerts, Jonathan; Labie, Riet; Loozen, Xavier; Granata, Stefano; El Daif, Ounsi; Trompoukis, Christos; Van Nieuwenhuysen, Kris; Meuris, Marc; Gordon, Ivan; Posthuma, Niels; Baert, Kris; Poortmans, Jef; Boulord, Caroline; Beaucarne, Guy (2013) -
80 nm tall thermally stable cost effective FinFETs for advanced dynamic random access memory periphery devices for artificial intelligence/machine learning and automotive applications
Spessot, Alessio; Ritzenthaler, Romain; Dentoni Litta, Eugenio; Dupuy, Emmanuel; O'Sullivan, Barry; Bastos, Joao; Capogreco, Elena; Miyaguchi, Kenichi; Machkaoutsan, Vladimir; Yoon, Younggwang; Fazan, Pierre; Horiguchi, Naoto (2021) -
80nm tall thermally stable cost effective FinFETs for advanced DRAM periphery devices for AI/ML and Automotive applications
Spessot, Alessio; Ritzenthaler, Romain; Dentoni Litta, Eugenio; Dupuy, Emmanuel; O'Sullivan, Barry; Bastos, Joao; Capogreco, Elena; Miyaguchi, Kenichi; Machkaoutsan, Vladimir; Yoon, Younggwang; Fazan, Pierre; Horiguchi, Naoto (2020) -
A Dy2O3-capped HfO2 dielectric and TaCx-based metals enabling low-Vt single-metal-single-dielectric gate stack
Chang, Vincent; Ragnarsson, Lars-Ake; Pourtois, Geoffrey; O'Connor, Robert; Adelmann, Christoph; Van Elshocht, Sven; Delabie, Annelies; Swerts, Johan; Van der Heyden, Nikolaas; Conard, Thierry; Cho, Hag-Ju; Akheyar, Amal; Mitsuhashi, Riichirou; Witters, Thomas; O'Sullivan, Barry; Pantisano, Luigi; Rohr, Erika; Lehnen, Peer; Kubicek, Stefan; Schram, Tom; De Gendt, Stefan; Absil, Philippe; Biesemans, Serge (2007) -
A field-effect transistor-based room-temperature quantum current source
Cheung, Kin P.; O'Sullivan, Barry (2023) -
A monolithic all-silicon multi-junction solar device for direct water splitting
Nordmann, S.; Berghoff, B.; Hessel, A.; Wilck, N.; O'Sullivan, Barry; Debucquoy, Maarten; John, Joachim; Starschich, S.; Knoch, J. (2016) -
Accelerated device degradation analysis on high speed Ge waveguide photodetectors
Lesniewska, Alicja; Srinivasan, Ashwyn; Van Campenhout, Joris; O'Sullivan, Barry; Croes, Kristof (2019) -
Accurate gate impedance determination on ultraleaky MOSFETs by fitting to a three-lumped-parameter model at frequencies from DC to RF
San Andres Serrano, Enrique; Pantisano, Luigi; Ramos, Javier; Roussel, Philippe; O'Sullivan, Barry; Toledano Luque, Maria; De Gendt, Stefan; Groeseneken, Guido (2007) -
Achieving low VT Ni-FUSI CMOS via lanthanide incorporation in the gate stack
Veloso, Anabela; Yu, HongYu; Lauwers, Anne; Chang, Shou-Zen; Adelmann, Christoph; Onsia, Bart; Demand, Marc; Brus, Stephan; Vrancken, Christa; Singanamalla, Raghunath; Lehnen, Peer; Kittl, Jorge; Kauerauf, Thomas; Vos, Rita; O'Sullivan, Barry; Van Elshocht, Sven; Mitsuhashi, Riichirou; Whittemore, G.; Yin, K.M.; Niwa, Masaaki; Hoffmann, Thomas; Absil, Philippe; Jurczak, Gosia; Biesemans, Serge (2007-09) -
Achieving low-VT Ni-FUSI CMOS via Lanthanide incorporation in the gate stack
Veloso, Anabela; Yu, HongYu; Lauwers, Anne; Chang, Shou-Zen; Adelmann, Christoph; Onsia, Bart; Demand, Marc; Brus, Stephan; Vrancken, Christa; Singanamalla, Raghunath; Lehnen, Peer; Kittl, Jorge; Kauerauf, Thomas; Vos, Rita; O'Sullivan, Barry; Van Elshocht, Sven; Mitsuhashi, Riichirou; Whittemore, G.; Yin, K.M.; Niwa, Masaaki; Hoffmann, Thomas; Absil, Philippe; Jurczak, Gosia; Biesemans, Serge (2008) -
Advanced Current-Voltage Model of Electrical Contacts to GaAs- and Ge-Based Active Silicon Photonic Devices
Hsieh, Ping-Yi; O'Sullivan, Barry; Tsiara, Artemisia; Truijen, Brecht; Lagrain, Pieter; Wouters, Lennaert; Yudistira, Didit; Kunert, Bernardette; Van Campenhout, Joris; De Wolf, Ingrid (2023) -
Advanced high-k materials and electrical analysis for memories: the role of SiO2-high-k dielectric intermixing
Morassi, L.; Larcher, L.; Pantisano, Luigi; Padovani, A.; Degraeve, Robin; Zahid, Mohammed; O'Sullivan, Barry (2009) -
Al2O3 passivation for copper plated 15.6x15.6 cm2 IBC cells
Jambaldinni, Shruti; Kyuzo, Manabu; O'Sullivan, Barry; Singh, Sukhvinder; Cornagliotti, Emanuele; Zielinski, Bartosz; Debucquoy, Maarten; Szlufcik, Jozef; Poortmans, Jef (2016) -
ALD Al2O3 for surface passivation of silicon solar cells: impact of covering metal
Loozen, Xavier; O'Sullivan, Barry; Rothschild, Aude; Vermang, Bart; John, Joachim; Poortmans, Jef (2010) -
ALD-Al2O3 passivation for solar cells: charge investigation
Rothschild, Aude; Vermang, Bart; Loozen, Xavier; O'Sullivan, Barry; John, Joachim; Poortmans, Jef (2010) -
Anomalous positive-bias temperature instability of high-k/metal gate devices with Dy2O3 capping
O'Connor, Robert; Chang, Vincent; Pantisano, Luigi; Ragnarsson, Lars-Ake; Aoulaiche, Marc; O'Sullivan, Barry; Groeseneken, Guido (2008) -
Anomalous positive-bias temperature instability of high-k/metal gate nMOSFET devices with Dy2O3 capping
O'Connor, Robert; Chang, Vincent; Pantisano, Luigi; Ragnarsson, Lars-Ake; Aoulaiche, Marc; O'Sullivan, Barry; Adelmann, Christoph; Van Elshocht, Sven; Lehnen, Peer; Yu, HongYu; Groeseneken, Guido (2008) -
Antenna effect in 65nm NMOS devices with 9.5nm thick HfOx gate dielectric
Hiblot, Gaspard; O'Sullivan, Barry; Ronchi, Nicolo; Banerjee, Kaustuv (2021) -
Application of seed and plate metallization to 15.6cm × 15.6cm IBC cells
Singh, Sukhvinder; O'Sullivan, Barry; Kyuzo, Manabu; Jambaldinni, Shruti; Tous, Loic; Russell, Richard; Debucquoy, Maarten; Szlufcik, Jozef; Poortmans, Jef (2015) -
Atomic and electrical characterisation of amorphous silicon passivation layers
O'Sullivan, Barry; Thoan, N.H.; Jivanescu, M.; Pantisano, Luigi; Bearda, Twan; Dross, Frederic; Gordon, Ivan; Afanasiev, Valeri; Stesmans, Andre; Poortmans, Jef (2012)