Browsing Conference contributions by imec author "1b2e1d1ce5bf5bdf745054353a04a8f0d57e1cce"
Now showing items 1-20 of 69
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200 mm industrial-ready dispersion-free GaN-on-Si buffer technology for 650 V rated power application
Zhao, Ming; Li, Xiangdong; Decoutere, Stefaan (2019) -
200 V enhancement-mode p-GaN HEMTs fabricated on 200 mm GaN-on-SOI with trench isolation for monolithic integration
Li, Xiangdong; Van Hove, Marleen; Zhao, Ming; Geens, Karen; Lempinen, Vesa-Pekka; Sormunen, Jaakko; Stoffels, Steve; Groeseneken, Guido; Decoutere, Stefaan (2017) -
200 V GaN-on-SOI Smart Power Platform for Monolithic GaN Power ICs
Cosnier, Thibault; Syshchyk, Olga; De Jaeger, Brice; Geens, Karen; Cingu, Deepthi; Fabris, Elena; Borga, Matteo; Vohra, Anurag; Zhao, Ming; Bakeroot, Benoit; Wellekens, Dirk; Magnani, Alessandro; Vudumula, Pavan; Chatterjee, Urmimala; Langer, Robert; Decoutere, Stefaan (2021) -
3D stacking using Cu-Cu direct bonding for 40μm pitch and beyond
Hu, Yu-Hsiang; Rebibis, Kenneth June; Zhao, Ming; La Manna, Antonio; Beyne, Eric; Liu, C.S.; Lii, M.J.; Yu, C.H. (2012) -
650 V p-GaN gate power HEMTs on 200 mm engineered substrates
Geens, Karen; Li, Xiangdong; Zhao, Ming; Guo, Weiming; Wellekens, Dirk; Posthuma, Niels; Fahle, Dirk; Aktas, Ozgur; Odnoblyudov, Vlad; Decoutere, Stefaan (2019) -
A comprehensive study of MOVPE growth on 200 mm GaN-on-SOI for monolithic integrated GaN ICs
Zhao, Ming; Geens, Karen; Li, Xiangdong; Amirifar, Nooshin; Decoutere, Stefaan (2021) -
Advanced transistors for high frequency applications
Parvais, Bertrand; Peralagu, Uthayasankaran; Alian, AliReza; Vais, Abhitosh; Witters, Liesbeth; Mols, Yves; Walke, Amey; Ingels, Mark; Yu, Hao; Putcha, Vamsi; Khaled, Ahmad; Rodriguez, Raul; Sibaja-Hernandez, Arturo; Yadav, Sachin; ElKashlan, Rana Y.; Baryshnikova, Marina; Mannaert, Geert; Alcotte, Reynald; Simoen, Eddy; Zhao, Ming; zhao, ellen; De Jaeger, Brice; Fleetwood, D.M.; Langer, Robert; Wambacq, Piet; Kunert, Bernardette; Waldron, Niamh; Collaert, Nadine (2020) -
An industry-ready 200 mm p-GaN E-mode GaN-on-Si power technology
Posthuma, Niels; You, Shuzhen; Stoffels, Steve; Wellekens, Dirk; Liang, Hu; Zhao, Ming; De Jaeger, Brice; Geens, Karen; Ronchi, Nicolo; Decoutere, Stefaan; Moens, Peter; Banerjee, Abhishek; Ziad, Hocine; Tack, Marnix (2018) -
Analysis of III-nitride device heterostructures using APT
Morris, Richard; Cuduvally, Ramya; Zhao, Ming; van der Heide, Paul; Vandervorst, Wilfried (2018) -
Analysis of the drain-to-substrate leakage of power HEMTs grown on highly resistive silicon substrate
Borga, Matteo; Meneghini, Matteo; Stoffels, Steve; Van Hove, Marleen; Li, Xiangdong; Zhao, Ming; Meneghesso, Gaudenzio; Zanoni, Enrico (2018) -
Application of scanning spreading resistance microscopy (SSRM) for GaN-on-silicon power structures
Kandaswamy, Prem Kumar; Saripalli, Yoga; Van Hove, Marleen; You, Shuzhen; Zhao, Ming; Liang, Hu; Vanhaeren, Danielle; Vanderheyden, Annelies; Schulze, Andreas; Eyben, Pierre; Decoutere, Stefaan; Langer, Robert; Vandervorst, Wilfried (2014) -
Back Barrier Trapping Induced Resistance Dispersion in GaN HEMT: Mechanism, Modeling, and Solutions
Yu, Hao; Parvais, Bertrand; Peralagu, Uthayasankaran; ElKashlan, Rana Y.; Rodriguez, Raul; Khaled, Ahmad; Yadav, Sachin; Alian, AliReza; Zhao, Ming; Braga, N. de Almeida; Cobb, J.; Fang, J.; Cardinael, Pieter; Sibaja-Hernandez, Arturo; Collaert, Nadine (2022-12-01) -
Cleaning requirement in the thinning module for 3D-Stacked IC (3D-SIC) integration
Wostyn, Kurt; Zhao, Ming; Cui, Hushan; Laermans, Patrick; Jourdain, Anne; Verbinnen, Greet; Struyf, Herbert; De Strycker, Steven; Claes, Martine; Travaly, Youssef; Leunissen, Peter (2010) -
CMOS compatible GaN-on-Si HEMT technology for RF applications: analysis of substrate losses and non-linearities
Yadav, Sachin; Cardinael, Pieter; Zhao, Ming; Vondkar Kodandarama, Komal; Peralagu, Uthayasankaran; Alian, Alireza; Khaled, Ahmad; Makovejev, Sergej; Ekoga, Enrique; Lederer, Dimitri; Raskin, Jean-Pierre; Parvais, Bertrand; Collaert, Nadine (2021) -
CMOS process-compatible 200mm polycrystalline AlN substrates for GaN power transistors
Geens, Karen; Van Hove, Marleen; Li, Xiangdong; Zhao, Ming; atka, Alexander; Vincze, Andrej; Decoutere, Stefaan (2017) -
CMOS-compatible GaN-based devices on 200mm-Si for RF applications: integration and performance
Peralagu, Uthayasankaran; Alian, AliReza; Putcha, Vamsi; Khaled, Ahmad; Rodriguez, Raul; Sibaja-Hernandez, Arturo; Chang, Shane; Simoen, Eddy; Zhao, Simeng Ellen; De Jaeger, Brice; Fleetwood, Daniel M.; Wambacq, Piet; Zhao, Ming; Parvais, Bertrand; Waldron, Niamh; Collaert, Nadine (2019-12) -
Defect Assessment in AlN Nucleation Layers Grown on Silicon and Silicon-on-Insulator Substrates
Simoen, Eddy; Zhang, Weihang; Zhang, Jiahan; Claeys, Cor; Zhao, Ming (2019) -
Demonstration of integrating post-thinning clean and TSV exposure recess etch into a wafer backside thinning process
Zhao, Ming; Hayakawa, Susumu; Nishida, Yoshiteru; Jourdain, Anne; Tabuchi, Tomotaka; Leunissen, Peter (2012) -
Demonstration of ultra-thin Si grinding process controlled by in-situ non-contact gauge for 3D stacked IC (3D-SIC)
Zhao, Ming; Verbinnen, Greet; Yoshida, Shinji; Hayakawa, Susumu; Tabuchi, Tomotaka; Jourdain, Anne; Beyne, Eric; Swinnen, Bart; Leunissen, Peter (2010) -
Depth-resolved cathodoluminescence spectroscopy for characterization of advanced GaN-on-Si buffers
Priesol, Juraj; Satka, Alexander; Visalli, Domenica; Derluyn, Joff; Zhao, Ming; Stoffels, Steve (2017)