Now showing items 1-16 of 16

    • 3D sequential stacked planar devices on 300 mm wafers featuring replacement metal gate junction-less top devices processed at 525°C with improved reliability 

      Vandooren, Anne; Franco, Jacopo; Parvais, Bertrand; Wu, Zhicheng; Witters, Liesbeth; Walke, Amey; Li, Waikin; Peng, Lan; Deshpande, Veeresh Vidyadhar; Bufler, Fabian; Rassoul, Nouredine; Hellings, Geert; Jamieson, Geraldine; Inoue, Fumihiro; Verbinnen, Greet; Devriendt, Katia; Teugels, Lieve; Heylen, Nancy; Vecchio, Emma; Tao, Zheng; Rosseel, Erik; Vanherle, Wendy; Hikavyy, Andriy; Chan, BT; Ritzenthaler, Romain; Besnard, Guillaume; Schwarzenbach, Walter; Gaudin, Gweltaz; Radu, Ionut; Nguyen, Bich-Yen; Waldron, Niamh; De Heyn, Vincent; Mocuta, Dan; Collaert, Nadine (2018)
    • 3D technologies for analog/RF applications 

      Vandooren, Anne; Parvais, Bertrand; Witters, Liesbeth; Walke, Amey; Vais, Abhitosh; Merckling, Clement; Lin, Dennis; Waldron, Niamh; Wambacq, Piet; Mocuta, Dan; Collaert, Nadine (2017)
    • Advanced transistors for high frequency applications 

      Parvais, Bertrand; Peralagu, Uthayasankaran; Alian, AliReza; Vais, Abhitosh; Witters, Liesbeth; Mols, Yves; Walke, Amey; Ingels, Mark; Yu, Hao; Putcha, Vamsi; Khaled, Ahmad; Rodriguez, Raul; Sibaja-Hernandez, Arturo; Yadav, Sachin; ElKashlan, Rana Y.; Baryshnikova, Marina; Mannaert, Geert; Alcotte, Reynald; Simoen, Eddy; Zhao, Ming; zhao, ellen; De Jaeger, Brice; Fleetwood, D.M.; Langer, Robert; Wambacq, Piet; Kunert, Bernardette; Waldron, Niamh; Collaert, Nadine (2020)
    • Beyond-Si materials and devices for more Moore and more than Moore applications 

      Collaert, Nadine; Alian, AliReza; Arimura, Hiroaki; Boccardi, Guillaume; Eneman, Geert; Franco, Jacopo; Ivanov, Tsvetan; Lin, Dennis; Mitard, Jerome; Ramesh, Siva; Rooyackers, Rita; Schaekers, Marc; Sibaja-Hernandez, Arturo; Sioncke, Sonja; Smets, Quentin; Vais, Abhitosh; Vandooren, Anne; Veloso, Anabela; Verhulst, Anne; Verreck, Devin; Waldron, Niamh; Walke, Amey; Witters, Liesbeth; Yu, Hao; Zhou, Daisy; Thean, Aaron (2016)
    • Buried metal line compatible with 3D sequential integration for top tier planar devices dynamic Vth tuning and RF shielding applications 

      Vandooren, Anne; Wu, Zhicheng; Khaled, Ahmad; Franco, Jacopo; Parvais, Bertrand; Li, W.; Witters, Liesbeth; Walke, Amey; Peng, Lan; Rassoul, Nouredine; Matagne, Philippe; Jamieson, Geraldine; Inoue, Fumihiro; Nguyen, B.Y.; Debruyn, Haroen; Devriendt, Katia; Teugels, Lieve; Heylen, Nancy; Vecchio, Emma; Zheng, T.; Radisic, Dunja; Rosseel, Erik; Vanherle, Wendy; Hikavyy, Andriy; Chan, BT; Besnard, G.; Schwarzenbach, W.; Gaudin, G.; Radu, Iuliana; Waldron, Niamh; De Heyn, Vincent; Demuynck, Steven; Boemmels, Juergen; Ryckaert, Julien; Collaert, Nadine; Mocuta, Dan (2019)
    • DC and RF Characterization of Nano-ridge HBT Technology Integrated on 300 mm Si Substrates 

      Yadav, Sachin; Vais, Abhitosh; ElKashlan, Rana Y.; Witters, Liesbeth; Vondkar Kodandarama, Komal; Mols, Yves; Walke, Amey; Yu, Hao; Alcotte, Reynald; Ingels, Mark; Wambacq, Piet; Langer, Robert; Kunert, Bernardette; Waldron, Niamh; Parvais, Bertrand; Collaert, Nadine (2021)
    • Exploring the DC reliability metrics for scaled GaN-on-Si devices targeted for RF/5G applications 

      Zhao, S. E.; Putcha, Vamsi; Bury, Erik; Franco, Jacopo; Walke, Amey; Peralagu, Uthayasankaran; Zhao, Ming; Alian, AliReza; Kaczer, Ben; Waldron, Niamh; Linten, Dimitri; Parvais, Bertrand; Collaert, Nadine (2020)
    • Fabrication challenges and opportunities for high-mobility materials: from CMOS applications to emerging derivative technologies 

      Collaert, Nadine; Alian, AliReza; De Jaeger, Brice; Peralagu, Uthayasankaran; Vais, Abhitosh; Walke, Amey; Witters, Liesbeth; Yu, Hao; Capogreco, Elena; Devriendt, Katia; Hopf, Toby; Kenis, Karine; Mannaert, Geert; Milenin, Alexey; Peter, Antony; Sebaai, Farid; Teugels, Lieve; van Dorp, Dennis; Wostyn, Kurt; Horiguchi, Naoto; Waldron, Niamh (2019-03)
    • First demonstration of 3D stacked Finfets at a 45nm fin pitch and 110nm gate pitch technology on 300mm wafers 

      Vandooren, Anne; Franco, Jacopo; Wu, Zhicheng; Parvais, Bertrand; Li, Waikin; Walke, Amey; Peng, Lan; Deshpande, Paru; Rassoul, Nouredine; Hellings, Geert; Jamieson, Geraldine; Inoue, Fumihiro; Devriendt, Katia; Teugels, Lieve; Heylen, Nancy; Vecchio, Emma; Zheng, T.; Rosseel, Erik; Vanherle, Wendy; Hikavyy, Andriy; Mannaert, Geert; Chan, BT; Ritzenthaler, Romain; Mitard, Jerome; Ragnarsson, Lars-Ake; Waldron, Niamh; De Heyn, Vincent; Demuynck, Steven; Boemmels, Juergen; Mocuta, Dan; Ryckaert, Julien; Collaert, Nadine (2018)
    • First demonstration of III-V HBTs on 300mm Si substrates using nanoridge technology 

      Vais, Abhitosh; Witters, Liesbeth; Mols, Yves; Sibaja-Hernandez, Arturo; Walke, Amey; Yu, Hao; Deshpande, Paru; Baryshnikova, Marina; Mannaert, Geert; Alcotte, Reynald; Ingels, Mark; Wambacq, Piet; Parvais, Bertrand; Langer, Robert; Kunert, Bernardette; Waldron, Niamh; Collaert, Nadine (2019-12)
    • From 5G to 6G: will compound semiconductors make the difference? 

      Collaert, Nadine; Alian, AliReza; Banerjee, Aritra; Chauhan, Vikas; ElKashlan, Rana Y.; Hsu, Brent; Ingels, Mark; Khaled, Ahmad; Vondkar Kodandarama, Komal; Kunert, Bernardette; Mols, Yves; Peralagu, Uthayasankaran; Putcha, Vamsi; Rodriguez, Raul; Sibaja-Hernandez, Arturo; Simoen, Eddy; Vais, Abhitosh; Walke, Amey; Witters, Liesbeth; Yadav, Sachin; Yu, Hao; Zhao, Ming; Wambacq, Piet; Parvais, Bertrand; Waldron, Niamh (2020)
    • High performance La-doped HZO based ferroelectric capacitors by interfacial engineering 

      Popovici, Mihaela Ioana; Bizindavyi, Jasper; Favia, Paola; Clima, Sergiu; Alam, Md Nur Kutubul; Ramachandran, R. K.; Walke, Amey; Celano, Umberto; Leonhardt, A.; Mukherjee, Shankha; Richard, Olivier; Illiberi, A.; Givens, M.; Delhougne, Romain; Van Houdt, Jan; Kar, Gouri Sankar (2022)
    • Semiconductor technologies for next generation mobile communications 

      Collaert, Nadine; Alian, AliReza; Chen, Shih-Hung; Deshpande, Veeresh Vidyadhar; Ingels, Mark; Putcha, Vamsi; Sibaja-Hernandez, Arturo; van Liempd, Barend; Vais, Abhitosh; Vandooren, Anne; Walke, Amey; Witters, Liesbeth; Yu, Hao; Linten, Dimitri; Parvais, Bertrand; Wambacq, Piet; Waldron, Niamh (2018-11)
    • Sequential 3D: Key integration challenges and opportunities for advanced semiconductor scaling 

      Vandooren, Anne; Witters, Liesbeth; Franco, Jacopo; Mallik, Arindam; Parvais, Bertrand; Wu, Z.; Walke, Amey; Deshpande, Paru; Rosseel, Erik; Hikavyy, Andriy; Li, Waikin; Peng, L.; Rassoul, Nouredine; Jamieson, Geraldine; Inoue, Fumihiro; Verbinnen, Greet; Devriendt, Katia; Teugels, Lieve; Heylen, Nancy; Vecchio, Emma; Zheng, T.; Waldron, Niamh; De Heyn, Vincent; Mocuta, Dan; Collaert, Nadine (2018)
    • The impact of sequential-3D integration on semiconductor scaling roadmap 

      Mallik, Arindam; Vandooren, Anne; Witters, Liesbeth; Walke, Amey; Franco, Jacopo; Sherazi, Yasser; Weckx, Pieter; Yakimets, Dmitry; Garcia Bardon, Marie; Parvais, Bertrand; Debacker, Peter; Ku, B.W.; Lim, S.K.; Mocuta, Anda; Mocuta, Dan; Ryckaert, Julien; Collaert, Nadine; Raghavan, Praveen (2017)
    • The revival of compound semiconductors and how they will change the world in a 5G/6G era 

      Collaert, Nadine; Alian, AliReza; Banerjee, Aritra; Chauhan, Vikas; ElKashlan, Rana Y.; Hsu, Brent; Ingels, Mark; Vondkar Kodandarama, Komal; Khaled, Ahmad; Kunert, Bernardette; Mols, Yves; Peralagu, Uthayasankaran; Putcha, Vamsi; Rodriguez, Raul; Sibaja-Hernandez, Arturo; Simoen, Eddy; Vais, Abhitosh; Walke, Amey; Witters, Liesbeth; Yadav, Sachin; Yu, Hao; Zhao, Ming; Wambacq, Piet; Parvais, Bertrand; Waldron, Niamh (2020)