Browsing Conference contributions by imec author "b6ac06cee0e8f5a61784b2657a265eea04e0d9d9"
Now showing items 1-20 of 45
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200 V enhancement-mode p-GaN HEMTs fabricated on 200 mm GaN-on-SOI with trench isolation for monolithic integration
Li, Xiangdong; Van Hove, Marleen; Zhao, Ming; Geens, Karen; Lempinen, Vesa-Pekka; Sormunen, Jaakko; Stoffels, Steve; Groeseneken, Guido; Decoutere, Stefaan (2017) -
200 V GaN-on-SOI Smart Power Platform for Monolithic GaN Power ICs
Cosnier, Thibault; Syshchyk, Olga; De Jaeger, Brice; Geens, Karen; Cingu, Deepthi; Fabris, Elena; Borga, Matteo; Vohra, Anurag; Zhao, Ming; Bakeroot, Benoit; Wellekens, Dirk; Magnani, Alessandro; Vudumula, Pavan; Chatterjee, Urmimala; Langer, Robert; Decoutere, Stefaan (2021) -
2kV breakdown voltage GaN-on-Si DHFETs with sub-micron thick AlGaN Buffer
Srivastava, Puneet; Cheng, Kai; Das, Jo; Van Hove, Marleen; Leys, Maarten; Marcon, Denis; Visalli, Domenica; Geens, Karen; Decoutere, Stefaan; Mertens, Robert; Borghs, Gustaaf (2012) -
650 V p-GaN gate power HEMTs on 200 mm engineered substrates
Geens, Karen; Li, Xiangdong; Zhao, Ming; Guo, Weiming; Wellekens, Dirk; Posthuma, Niels; Fahle, Dirk; Aktas, Ozgur; Odnoblyudov, Vlad; Decoutere, Stefaan (2019) -
A comprehensive study of MOVPE growth on 200 mm GaN-on-SOI for monolithic integrated GaN ICs
Zhao, Ming; Geens, Karen; Li, Xiangdong; Amirifar, Nooshin; Decoutere, Stefaan (2021) -
AlON gate dielectric and gate trench cleaning for improved relia-bility of vertical GaN MOSFET
Filho Goncalez, Walter; Borga, Matteo; Geens, Karen; Cingu, Deepthi; Chatterjee, Urmimala; You, Shuzhen; Bakeroot, Benoit; Decoutere, Stefaan; Knaepen, Werner; Arnou, Panagiota; Homm, Pia (2022) -
An industry-ready 200 mm p-GaN E-mode GaN-on-Si power technology
Posthuma, Niels; You, Shuzhen; Stoffels, Steve; Wellekens, Dirk; Liang, Hu; Zhao, Ming; De Jaeger, Brice; Geens, Karen; Ronchi, Nicolo; Decoutere, Stefaan; Moens, Peter; Banerjee, Abhishek; Ziad, Hocine; Tack, Marnix (2018) -
Au-free CMOS-compatible AlGaN/GaN HEMT processing on 200 mm Si substrates
De Jaeger, Brice; Van Hove, Marleen; Wellekens, Dirk; Kang, Xuanwu; Liang, Hu; Mannaert, Geert; Geens, Karen; Decoutere, Stefaan (2012) -
Au-free, high-breakdown AlGaN/GaN MISHEMTs with low leakage, high yield and robust TDDB characteristics
Lenci, Silvia; Kang, Xuanwu; Wellekens, Dirk; Van Hove, Marleen; Boulay, Sanae; Stoffels, Steve; Geens, Karen; Zahid, Mohammed; Decoutere, Stefaan (2012) -
CMOS process-compatible 200mm polycrystalline AlN substrates for GaN power transistors
Geens, Karen; Van Hove, Marleen; Li, Xiangdong; Zhao, Ming; atka, Alexander; Vincze, Andrej; Decoutere, Stefaan (2017) -
Coupled electro-thermal model for simulation of GaN power switching HEMTs in circuit simulators
Stoffels, Steve; Oprins, Herman; Marcon, Denis; Geens, Karen; Kang, Xuanwu; Van Hove, Marleen; Decoutere, Stefaan (2012) -
Demonstration of Bilayer Gate Insulator for Improved Reliability in GaN-on-Si Vertical Transistors
Mukherjee, Kalparupa; De Santi, Carlo; Meneghesso, Gaudenzio; Zanoni, Enrico; Meneghini, Matteo; You, Shuzhen; Geens, Karen; Borga, Matteo; Bakeroot, Benoit; Decoutere, Stefaan (2020) -
Demonstration of High-quality GaN Epitaxy on 200 mm Engineered Substrates for Vertical Power Device Fabrication
Geens, Karen; Herwig, Hahn; Liang, Hu; Borga, Matteo; Cingu, Deepthi; You, Shuzhen; Marx, Matthias; Oligschlaeger, Robert; Fahle, Dirk; Heuken, Michael; Odnoblyudov, Vladimir; Aktas, Ozgur; Basceri, Cem; Decoutere, Stefaan (2021) -
Device optimization for 200V GaN-on-SOI Platform for Monolithicly Integrated Power Circuits
Syshchyk, Olga; Cosnier, Thibault; Huang, Zheng-Hong; Cingu, Deepthi; Wellekens, Dirk; Vohra, Anurag; Geens, Karen; Vudumula, Pavan; Chatterjee, Urmimala; Decoutere, Stefaan; Wu, Tian-Li; Bakeroot, Benoit (2022) -
DLTS Study of Electrically Active Defects in semi-vertical GaN-on-Si FETs
Drobnŭ, Jakub; Marek, Juraj; Koza, A.; Vadovski, J.; Geens, Karen; Borga, Matteo; Liang, Hu; You, Shuzhen; Decoutere, Stefaan; Stuchlíková, Lubica (2020) -
Electrical and DLTS Characterization of Gate Interfaces in GaN-based Trench-gate semi-vertical MOS devices
Marek, Juraj; Mikoláek, Miroslav; Drobnŭ, Jakub; Kozarik, Jozef; Chvála, Ale; Geens, Karen; Borga, Matteo; Liang, Hu; You, Shuzhen; Decoutere, Stefaan; Stuchlíková, Lubica (2020) -
Epitaxial growth and characterization of P-GaN gated HEMT on compliant poly-AlN substrate for e-mode power devices
Guo, Weiming; Geens, Karen; Zhao, Ming; Behmenburg, Hannes; Fahle, Dirk; Odnoblyudov, Vlad; Basceri, Cem; Aktas, Ozgur; Decoutere, Stefaan (2018) -
Epitaxial growth by MOCVD on 200 mm engineered substrates for power devices & ICs beyond 650 V
Fahle, Dirk; Zhao, Ming; Geens, Karen; Li, Xiangdong; Wellekens, Dirk; Magnani, Alessandro; Amirifar, Nooshin; Bakeroot, Benoit; You, Shuzhen; Odnoblyudov, Vladimir; Aktas, Ozgur; Basceri, Cem; Marcon, Denis; Groeseneken, Guido; Decoutere, Stefaan; Hahn, Herwig; Heuken, Michael (2019) -
GaN Device architectures enabled by next generation substrates
Stoffels, Steve; Geens, Karen; Posthuma, Niels; Zhao, Ming; Liang, Hu; Li, Xiangdong; Wellekens, Dirk; You, Shuzhen; Bakeroot, Benoit; Van Hove, Marleen; Decoutere, Stefaan (2018) -
GaN on polycrystalline AlN substrates for power device applications
Yuan, Chao; Pomeroy, James W.; Uren, Michael J.; Geens, Karen; Stoffels, Steve; Kuball, Martin (2018)