Recently added

Magnetoelectric switching and spin wave generation

Soree, Bart; Tierno, Davide; Adelmann, Christoph; Zografos, Odysseas; Vaysset, Adrien; Ciubotaru, Florin (2016)

Back-reflection free grating couplers on silicon-on-insulator

Song, Jeonghwan; Rottenberg, Xavier (2016-09)

56 Gb/s PAM-4 driver IC for long-wavelength VCSEL transmitters

Soenen, Wouter; Vaernewyck, Renato; Yin, Xin; Spiga, Silvia; Amann, Markus-Christian; Van Steenberge, Geert; Mentovich, Elad; Bakopoulos, Paraskevas; Bauwelinck, Johan (2016)

New fast distributed thermal model for analysis of GaN based power devices

Sodan, Vice; Maggioni, Federica; Oprins, Herman; Stoffels, Steve; Baelmans, Martine; De Wolf, Ingrid (2016)

Module-level cell processing of silicon heterojunction interdigitated back-contacted (SHJ-IBC) solar cells with efficiencies above 22%: Towards all-dry processing

Sivaramakrishnan Radhakrishnan, Hariharsudan; Bearda, Twan; Xu, Menglei; Jonnak, Shashi Kiran; Malik, Shuja; Hasan, Mahmudul; Depauw, Valerie; Filipic, Miha; Van Nieuwenhuysen, Kris; Abdulraheem, Yaser; Debucquoy, Maarten; Gordon, Ivan; Szlufcik, Jozef; Poortmans, Jef (2016)

Module-level cell processing of silicon heterojunction interdigitated back-contacted (SHJ-IBC) solar cells with efficiencies above 22%: Towards all-dry processing

Sivaramakrishnan Radhakrishnan, Hariharsudan; Bearda, Twan; Xu, Menglei; Jonnak, Shashi Kiran; Malik, Shuja; Hasan, Mahmudul; Depauw, Valerie; Filipic, Miha; Van Nieuwenhuysen, Kris; Abdulraheem, Yaser; Debucquoy, Maarten; Gordon, Ivan; Szlufcik, Jozef; Poortmans, Jef (2016)

Manufacturability of dense hole arrays with directed self-assembly using the CHIPS flow

Singh, Arjun; Nam, Jaewoo; Lee, Jongsu; Chan, BT; Wu, Hengpeng; Yin, Jian; Cao, Yi; Gronheid, Roel (2016)

Understanding defects in CHIPS flow hexagonal arrays and strategies for improvement

Singh, Arjun; Lee, Jongsu; Nam, Jaewoo; Chan, BT; Gronheid, Roel (2016)

Generation-recombination noise in advanced CMOS devices

Simoen, Eddy; Oliveira, Alberto; Boudier, Dimitri; Mitard, Jerome; Witters, Liesbeth; Veloso, Anabela; Agopian, Paula; Martino, Joao; Carin, Regis; Langer, Robert; Collaert, Nadine; Thean, Aaron; Claeys, Cor (2016)

Impact of the gate material on the deep levels in a-Si:H/c-SI metal-insulator-semiconductor capacitors

Simoen, Eddy; Ferro, Valentina; O'Sullivan, Barry (2016)

On the assessment of electrically active defects in high-mobility materials and devices

Simoen, Eddy; Eneman, Geert; Oliveira, Alberto V.; Ni, Kai; Mitard, Jerome; Witters, Liesbeth; Agopian, Paula G D; Martino, Joao Antonio; Fleetwood, Dan; Schrimpf, Ronald; Reed, Robert; Collaert, Nadine; Thean, Aaron; Claeys, Cor (2016)

Study of electrically active defects in epitaxial layers on silicon

Simoen, Eddy; Dhayalan, Sathish Kumar; Jayachandran, Suseendran; Gupta, Somya; Gencarelli, Federica; Hikavyy, Andriy; Loo, Roger; Rosseel, Erik; Delabie, Annelies; Caymax, Matty; Langer, Robert; Barla, Kathy; Vrielinck, Henk; Lauwaert, Johan (2016)

Substitutional carbon loss in Si:C stressor layers probed by Deep-Level Transient Spectroscopy

Simoen, Eddy; Dhayalan, Sathish Kumar; Hikavyy, Andriy; Loo, Roger; Rosseel, Erik; Vrielinck, Hemk; Lauwaert, Johan (2016)

Low-frequency noise spectroscopy of bulk and border traps in nanoscale devices

Simoen, Eddy; Cretu, Bogdan; Fang, Wen; Aoulaiche, Marc; Routoure, Jean-Marc; Carin, Regis; Luo, Jun; Zhao, Chao; Claeys, Cor (2016)

Can we tell something about the barrier for capture from random telegraph signal time constants without changing the temperature?

Simoen, Eddy; Claeys, Cor (2016)

Comparative experimental analysis of time-dependent variability using a transistor test array

Simicic, Marko; Subirats, Alexandre; Weckx, Pieter; Kaczer, Ben; Franco, Jacopo; Roussel, Philippe; Linten, Dimitri; Thean, Aaron; Groeseneken, Guido; Gielen, Georges (2016)

Graphene devices for outperformed optical interconnets

Shiramin, Leili Abdollahi; Van Thourhout, Dries (2016)

Introduction of Sn into GeSn based group-IV thin films and its impacts

Shimura, Yosuke; Ike, Shinichi; Gencarelli, Federica; Takeuchi, Wakana; Sakashita, Mitsuo; Kurosawa, Masashi; Loo, Roger; Nakatsuka, Osamu; Zaima, Shigeaki (2016-09)

Highly activated phosphorus in CVD Ge layers using in-situ doping at low temperature enabled by high order Ge precursors: toward Group-IV optical interconnections

Shimura, Yosuke; Srinivasan, Ashwyn; Van Thourhout, Dries; Van Deun, Rik; Pantouvaki, Marianna; Van Campenhout, Joris; Loo, Roger (2016)

Double-sided processing for membrane-based photonic integration

Shen, Longfei; Jiao, Yuqing; Higuera-Rodriguez, Aura; Millan-Mejia, Alonso; Roelkens, Gunther; Smit, M.; van de Tol, Jos (2016)

Conference contributions: Recent submissions

Magnetoelectric switching and spin wave generation ﻿

Back-reflection free grating couplers on silicon-on-insulator ﻿

56 Gb/s PAM-4 driver IC for long-wavelength VCSEL transmitters ﻿

New fast distributed thermal model for analysis of GaN based power devices ﻿

Module-level cell processing of silicon heterojunction interdigitated back-contacted (SHJ-IBC) solar cells with efficiencies above 22%: Towards all-dry processing ﻿

Module-level cell processing of silicon heterojunction interdigitated back-contacted (SHJ-IBC) solar cells with efficiencies above 22%: Towards all-dry processing ﻿

Manufacturability of dense hole arrays with directed self-assembly using the CHIPS flow ﻿

Understanding defects in CHIPS flow hexagonal arrays and strategies for improvement ﻿

Generation-recombination noise in advanced CMOS devices ﻿

Impact of the gate material on the deep levels in a-Si:H/c-SI metal-insulator-semiconductor capacitors ﻿

On the assessment of electrically active defects in high-mobility materials and devices ﻿

Study of electrically active defects in epitaxial layers on silicon ﻿

Substitutional carbon loss in Si:C stressor layers probed by Deep-Level Transient Spectroscopy ﻿

Low-frequency noise spectroscopy of bulk and border traps in nanoscale devices ﻿

Can we tell something about the barrier for capture from random telegraph signal time constants without changing the temperature? ﻿

Comparative experimental analysis of time-dependent variability using a transistor test array ﻿

Graphene devices for outperformed optical interconnets ﻿

Introduction of Sn into GeSn based group-IV thin films and its impacts ﻿

Highly activated phosphorus in CVD Ge layers using in-situ doping at low temperature enabled by high order Ge precursors: toward Group-IV optical interconnections ﻿

Double-sided processing for membrane-based photonic integration ﻿

Magnetoelectric switching and spin wave generation

Back-reflection free grating couplers on silicon-on-insulator

56 Gb/s PAM-4 driver IC for long-wavelength VCSEL transmitters

New fast distributed thermal model for analysis of GaN based power devices

Module-level cell processing of silicon heterojunction interdigitated back-contacted (SHJ-IBC) solar cells with efficiencies above 22%: Towards all-dry processing

Module-level cell processing of silicon heterojunction interdigitated back-contacted (SHJ-IBC) solar cells with efficiencies above 22%: Towards all-dry processing

Manufacturability of dense hole arrays with directed self-assembly using the CHIPS flow

Understanding defects in CHIPS flow hexagonal arrays and strategies for improvement

Generation-recombination noise in advanced CMOS devices

Impact of the gate material on the deep levels in a-Si:H/c-SI metal-insulator-semiconductor capacitors

On the assessment of electrically active defects in high-mobility materials and devices

Study of electrically active defects in epitaxial layers on silicon

Substitutional carbon loss in Si:C stressor layers probed by Deep-Level Transient Spectroscopy

Low-frequency noise spectroscopy of bulk and border traps in nanoscale devices

Can we tell something about the barrier for capture from random telegraph signal time constants without changing the temperature?

Comparative experimental analysis of time-dependent variability using a transistor test array

Graphene devices for outperformed optical interconnets

Introduction of Sn into GeSn based group-IV thin films and its impacts

Highly activated phosphorus in CVD Ge layers using in-situ doping at low temperature enabled by high order Ge precursors: toward Group-IV optical interconnections

Double-sided processing for membrane-based photonic integration