Recently added

The "permanent" component of NBTI revisited: saturation, degradation-reversal, and annealing

Grasser, T.; Waltl, M.; Rzepa, G.; Goes, W.; Wimmer, Y.; El-Sayed, A.-M.; Shluger, A. L.; Reisinger, H.; Kaczer, Ben (2016)

Advanced a-VMCO resistive switching memory through inner interface engineering with wide (>10²) on/off window, tunable μA-range switching current and excellent variability

Govoreanu, Bogdan; Di Piazza, Luca; Ma, Jigang; Conard, Thierry; Vanleenhove, Anja; Belmonte, Attilio; Radisic, Dunja; Popovici, Mihaela Ioana; Velea, Alin; Redolfi, Augusto; Richard, Olivier; Clima, Sergiu; Adelmann, Christoph; Bender, Hugo; Jurczak, Gosia (2016)

Impact of wind on intra-module energy yield variations

Goverde, Hans; van den Broeck, Giel; Anagnostos, Dimitrios; Herteleer, Bert; Govaerts, Jonathan; Goossens, Dirk; Voroshazi, Eszter; Baert, Kris; Catthoor, Francky; Driesen, Johan; Poortmans, Jef (2016)

Innovative approaches to interconnect back-contact cells

Govaerts, Jonathan; Borgers, Tom; Voroshazi, Eszter; Jambaldinni, Shruti; O'Sullivan, Barry; Singh, Sukhvinder; Debucquoy, Maarten; Szlufcik, Jozef; Poortmans, Jef (2016-08)

Retention, disturb and variability improvements enabled by local chemical-potential tuning and controlled hour-glass filament shape in a novel W\WO3\Al2O3\Cu CBRAM

Goux, Ludovic; Belmonte, Attilio; Celano, Umberto; Woo, Jiyong; Folkersma, Steven; Chen, Michael; Redolfi, Augusto; Fantini, Andrea; Degraeve, Robin; Clima, Sergiu; Vandervorst, Wilfried; Jurczak, Gosia (2016)

Co-optimizatin of RegC and TWINSCANTM corrections to improve the intra-field on-product overlay performance

Gorhad, Kujan; Sharon, Ofir; Dmitriev, Vladimir; Cohen, Avi; van Haren, Richard; Roelofs, Christian; Cekli, H.E.; Gallagher, Emily; Leray, Philippe; Beyer, Dirk; Trautsch, Thomas; Steinert, Steffen (2016)

A novel CMOS-compatible, monolithically integrated line-scan hyperspectral imager covering the VIS-NIR range

Gonzalez, Pilar; Tack, Klaas; Geelen, Bert; Masschelein, Bart; Charle, Wouter; Vereecke, Bart; Lambrechts, Andy (2016)

Methodologies to mitigate package induced stresses in the BEOL

Gonzalez, Mario; Kljucar, Luka; De Vos, Joeri; Beyne, Eric (2016)

BTI variability of SRAM cells under periodically changing stress profiles

Giering, Kay-Uwe; Lange, Andre; Kaczer, Ben; Jancke, Roland (2016)

Reconfigurable neuromorphic synapse interconnects with TFTs

Genoe, Jan; Raghavan, Praveen; Tokei, Zsolt; Catthoor, Francky; Steudel, Soeren (2016)

Long-term outdoor performance evaluation of organic PV modules

Gehlhaar, Robert; Vandenplas, Erwin; Cnops, Kjell; Cheyns, David; Vaessen, Anne-Francoise; Grandjean, Helene; Scheerlinck, Stijn; Aernouts, Tom (2016)

High efficiency blade coated perovskite photovoltaic modules by subcell interconnection optimization

Gehlhaar, Robert; Merckx, Tamara; Masse de la Huerta, Cesar; Rakocevic, Lucija; Qiu, Weiming; Paetzold, Ulrich W. (2016)

Loss analysis and optimization for high efficiency perovskite photovoltaic modules

Gehlhaar, Robert; Merckx, Tamara; Masse de la Huerta, Cesar; Rakocevic, Lucija; Qiu, Weiming; Jaysankar, Manoj (2016)

Extreme scaling enabled by 5 tracks cells : holistic design-device co-optimization for FinFETs and lateral nanowires

Garcia Bardon, Marie; Sherazi, Yasser; Schuddinck, Pieter; Jang, Doyoung; Yakimets, Dmitry; Debacker, Peter; Baert, Rogier; Mertens, Hans; Badaroglu, Mustafa; Mocuta, Anda; Horiguchi, Naoto; Mocuta, Dan; Raghavan, Praveen; Ryckaert, Julien; Verkest, Diederik; Steegen, An (2016)

Predictive As-grown-generation (A-G) model for BTI-induced device/circuit level variations in nanoscale technology nodes

Gao, R.; Ji, Zhigang; Hatta, S.M.; Zhang, J.F.; Franco, Jacopo; Kaczer, Ben; Zhang, W.; Duan, M.; De Gendt, Stefan; Linten, Dimitri; Groeseneken, Guido; Bi, J.; Liu, M. (2016)

Introducing the euv cnt pellicle

Gallagher, Emily; Huyghebaert, Cedric; Lee, Jae Uk; Pollentier, Ivan; Timmermans, Marina; Zahedmanesh, Houman (2016)

Demonstration of an InGaAs gate stack with sufficient PBTI reliability by thermal budget optimization, nitridation, high-k material choice, and interface dipole

Franco, Jacopo; Vais, Abhitosh; Sioncke, Sonja; Putcha, Vamsi; Kaczer, Ben; Shie, Bo-Shiuan; Shi, Xiaoping; Reyhaneh, Mahlouji; Nyns, Laura; Zhou, Daisy; Waldron, Niamh; Maes, Jan; Xie, Qi; Givens, M.; Tang, F.; Jiang, X.; Arimura, Hiroaki; Schram, Tom; Ragnarsson, Lars-Ake; Sibaja-Hernandez, Arturo; Hellings, Geert; Horiguchi, Naoto; Heyns, Marc; Groeseneken, Guido; Linten, Dimitri; Collaert, Nadine; Thean, Aaron (2016)

NBTI in replacement metal gate SiGe core finFETs: impact of Ge concentration, fin width, fin rotation and interface passivation by high pressure anneal

Franco, Jacopo; Kaczer, Ben; Vaisman Chasin, Adrian; Mertens, Hans; Ragnarsson, Lars-Ake; Ritzenthaler, Romain; Mukhopadhyay, Subhadeep; Arimura, Hiroaki; Roussel, Philippe; Bury, Erik; Horiguchi, Naoto; Linten, Dimitri; Groeseneken, Guido; Thean, Aaron (2016)

Bias Temperature Instability (BTI) in high-mobility channel devices: SiGe, Ge, and InGaAs

Franco, Jacopo; Kaczer, Ben; Vais, Abhitosh; Sioncke, Sonja; Arimura, Hiroaki; Putcha, Vamsi; Alian, AliReza; Waldron, Niamh; Zhou, Daisy; Nyns, Laura; Mitard, Jerome; Witters, Liesbeth; Heyns, Marc; Groeseneken, Guido; Collaert, Nadine; Linten, Dimitri (2016)

Statistical model of the NBTI-induced threshold voltage, subthreshold swing, and transconductance degradations in advanced p-FinFETs

Franco, Jacopo; Kaczer, Ben; Mukhopadhyay, Subhadeep; Duhan, Pardeep; Weckx, Pieter; Roussel, Philippe; Chiarella, Thomas; Ragnarsson, Lars-Ake; Trojman, Lionel; Horiguchi, Naoto; Spessot, Alessio; Linten, Dimitri; Mocuta, Anda (2016)

Conference contributions: Recent submissions

The "permanent" component of NBTI revisited: saturation, degradation-reversal, and annealing ﻿

Advanced a-VMCO resistive switching memory through inner interface engineering with wide (>10²) on/off window, tunable μA-range switching current and excellent variability ﻿

Impact of wind on intra-module energy yield variations ﻿

Innovative approaches to interconnect back-contact cells ﻿

Retention, disturb and variability improvements enabled by local chemical-potential tuning and controlled hour-glass filament shape in a novel W\WO3\Al2O3\Cu CBRAM ﻿

Co-optimizatin of RegC and TWINSCANTM corrections to improve the intra-field on-product overlay performance ﻿

A novel CMOS-compatible, monolithically integrated line-scan hyperspectral imager covering the VIS-NIR range ﻿

Methodologies to mitigate package induced stresses in the BEOL ﻿

BTI variability of SRAM cells under periodically changing stress profiles ﻿

Reconfigurable neuromorphic synapse interconnects with TFTs ﻿

Long-term outdoor performance evaluation of organic PV modules ﻿

High efficiency blade coated perovskite photovoltaic modules by subcell interconnection optimization ﻿

Loss analysis and optimization for high efficiency perovskite photovoltaic modules ﻿

Extreme scaling enabled by 5 tracks cells : holistic design-device co-optimization for FinFETs and lateral nanowires ﻿

Predictive As-grown-generation (A-G) model for BTI-induced device/circuit level variations in nanoscale technology nodes ﻿

Introducing the euv cnt pellicle ﻿

Demonstration of an InGaAs gate stack with sufficient PBTI reliability by thermal budget optimization, nitridation, high-k material choice, and interface dipole ﻿

NBTI in replacement metal gate SiGe core finFETs: impact of Ge concentration, fin width, fin rotation and interface passivation by high pressure anneal ﻿

Bias Temperature Instability (BTI) in high-mobility channel devices: SiGe, Ge, and InGaAs ﻿

Statistical model of the NBTI-induced threshold voltage, subthreshold swing, and transconductance degradations in advanced p-FinFETs ﻿