Browsing Articles by imec author "161047720509463b8eb08eda56887779c992df2a"
Now showing items 41-60 of 171
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Electron barrier height at CuxTe1-x/Al2O3 interfaces of conducting bridgememory stacks
Afanasiev, Valeri; De Stefano, Francesca; Houssa, Michel; Stesmans, Andre; Goux, Ludovic; Opsomer, Karl; Kittl, Jorge; Jurczak, Gosia (2013) -
Endurance failure mechanisms in TiN\Ta2O5\Ta RRAM stack
Chen, Michael; Goux, Ludovic; Fantini, Andrea; Clima, Sergiu; Degraeve, Robin; Redolfi, Augusto; Chen, Yangyin; Groeseneken, Guido; Jurczak, Gosia (2015) -
Endurance of one transistor floating body RAM on UTBOX SOI
Aoulaiche, Marc; Bravaix, Alain; Simoen, Eddy; Caillat, Christian; Cho, Moon Ju; Witters, Liesbeth; Blomme, Pieter; Fazan, Pierre; Groeseneken, Guido; Jurczak, Gosia (2014) -
Endurance/retention trade-off on HfO2 / metal cap 1T1R bipolar RRAM
Chen, Yangyin; Goux, Ludovic; Clima, Sergiu; Govoreanu, Bogdan; Degraeve, Robin; Kar, Gouri Sankar; Fantini, Andrea; Groeseneken, Guido; Wouters, Dirk; Jurczak, Gosia (2013) -
Evidences of electrode-controlled retention properties in Ta2O5-based resistive-switching memory cells
Goux, Ludovic; Fantini, Andrea; Chen, Yangyin; Redolfi, Augusto; Degraeve, Robin; Jurczak, Gosia (2014) -
Evidences of oxygen-mediated resistive-switching mechanism in TiN\HfO2\Pt cells
Goux, Ludovic; Czarnecki, Piotr; Chen, Yangyin; Pantisano, Luigi; Wang, XinPeng; Degraeve, Robin; Govoreanu, Bogdan; Jurczak, Gosia; Wouters, Dirk; Altimime, Laith (2010) -
Experimental investigation of optimum gate workfunction for CMOS four-terminal muligate MOSFETs (MUGFETs)
Masahara, Meishoku; Surdeanu, Radu; Witters, Liesbeth; Doornbos, Gerben; Nguyen Hoang, Viet; Van den Bosch, Geert; Vrancken, Christa; Jurczak, Gosia; Biesemans, Serge (2007) -
Exploring the limits of stress-enhanced hole mobility
Smith, Lee; Moroz, Victor; Eneman, Geert; Verheyen, Peter; Nouri, Faran; Washington, Lori; Jurczak, Gosia; Penzin, Oleg; Pramanik, Dipu; De Meyer, Kristin (2005-09) -
Extraction of the top and sidewall mobility in FinFETs and the impact of fin-patterning processes and gate dielectrics on mobility
Iyengar, Vikram V.; Kottantharayil, Anil; Tranjan, Farid M.; Jurczak, Gosia; De Meyer, Kristin (2007) -
Fast VTH transients after the program/erase of flash memory stacks with high-k dielectrics
Toledano Luque, Maria; Degraeve, Robin; Zahid, Mohammed; Kaczer, Ben; Blomme, Pieter; Kittl, Jorge; Jurczak, Gosia; Van Houdt, Jan; Groeseneken, Guido (2011) -
Filament observation in metal-oxide resistive switching devices
Celano, Umberto; Chen, Yangyin; Wouters, Dirk; Groeseneken, Guido; Jurczak, Gosia; Vandervorst, Wilfried (2013) -
First-principles simulation of oxygen diffusion in HfOx: role in the resistive switching mechanism
Clima, Sergiu; Chen, Yangyin; Degraeve, Robin; Mees, Maarten; Sankaran, Kiroubanand; Govoreanu, Bogdan; Jurczak, Gosia; De Gendt, Stefan; Pourtois, Geoffrey (2012-03) -
First-principles thermodynamics and defect kinetics guidelines for engineering a tailored RRAM device
Clima, Sergiu; Chen, Yangyin; Chen, Michael; Goux, Ludovic; Govoreanu, Bogdan; Degraeve, Robin; Fantini, Andrea; Jurczak, Gosia; Pourtois, Geoffrey (2016) -
Frequency variation of the small-signal output conductance of decananometer MOSFETs due to the substrate crosstalk
Kilchytska, Valeria; Pailloncy, G.; Lederer, Dimitri; Raskin, Jean-Pierre; Collaert, Nadine; Jurczak, Gosia; Flandre, Denis (2007-05) -
Gate-source-drain architecture impact on DC and performance of sub-100-nm elevated source/drain NMOS transistors
Jeamsaksiri, Wutthinan; Jurczak, Gosia; Grau, Lluis; Linten, Dimitri; Augendre, Emmanuel; de Potter de ten Broeck, Muriel; Rooyackers, Rita; Wambacq, Piet; Badenes, Gonçal (2003) -
H-treatment impact on conductive-filament formation and stability in Ta2O5-based resistive-switching memory cells
Goux, Ludovic; Kim, J. Y.; Magyari-Kope, B.; Nishi, Y.; Redolfi, Augusto; Jurczak, Gosia (2015) -
HfOx as RRAM material – First principles insights on the working principles
Clima, Sergiu; Govoreanu, Bogdan; Jurczak, Gosia; Pourtois, Geoffrey (2014) -
High-k dielectrics for future generation memory devices
Kittl, Jorge; Opsomer, Karl; Popovici, Mihaela Ioana; Menou, Nicolas; Kaczer, Ben; Wang, Xin Peng; Adelmann, Christoph; Pawlak, Malgorzata; Tomida, Kazuyuki; Rothschild, Aude; Govoreanu, Bogdan; Degraeve, Robin; Schaekers, Marc; Zahid, Mohammed; Delabie, Annelies; Meersschaut, Johan; Polspoel, Wouter; Clima, Sergiu; Pourtois, Geoffrey; Knaepen, W.; Detavernier, C.; Afanasiev, Valeri; Blomberg, T.; Pierreux, Dieter; Swerts, Johan; Fischer, Pamela; Maes, Jan; Manger, Dirk; Vandervorst, Wilfried; Conard, Thierry; Franquet, Alexis; Favia, Paola; Bender, Hugo; Brijs, Bert; Van Elshocht, Sven; Jurczak, Gosia; Van Houdt, Jan; Wouters, Dirk (2009) -
High-performance metal-insulator-metal tunnel diode selectors
Govoreanu, Bogdan; Adelmann, Christoph; Redolfi, Augusto; Zhang, Leqi; Clima, Sergiu; Jurczak, Gosia (2014) -
Hydrogen-induced resistive switching in TiN/ALD HfO2/PEALD TiN RRAM device
Chen, Yangyin; Goux, Ludovic; Swerts, Johan; Toeller, Michael; Adelmann, Christoph; Kittl, Jorge; Jurczak, Gosia; Groeseneken, Guido; Wouters, Dirk (2012)