Browsing Articles by author "Paccagnella, A."

A statistical approach to microdose induced degradation in FinFET devices

Griffoni, Alessio; Gerardin, S.; Roussel, Philippe; Degraeve, Robin; Meneghesso, G.; Paccagnella, A.; Simoen, Eddy; Claeys, Cor (2009)

Depassivation of latent plasma damage in nMOSFETs

Cellere, G.; Pantisano, Luigi; Valentini, M. G.; Paccagnella, A. (2001)

Different nature of process-induced and stress-induced defects in thin SiO2 layers

Cellere, G.; Valentini, M.G.; Pantisano, Luigi; Cheung, K.P.; Paccagnella, A. (2003)

Effects of heavy-ion strikes on fully depleted SOI MOSFETs with ultra-thin gate oxide and different strain-inducing techniques

Griffoni, A.; Gerardin, S.; Cester, A.; Paccagnella, A.; Simoen, Eddy; Claeys, Cor (2007)

Electrical stresses on ultra-thin gate oxide SOI MOSFETs after irradiation

Cester, A.; Gerardin, S.; Paccagnella, A.; Simoen, Eddy; Claeys, Cor (2005)

Microdose and breakdown effects induced by heavy ions on sub 20-nm triple gate SOI FETs

Griffoni, Alessio; Gerardin, S.; Meneghesso, G.; Paccagnella, A.; Simoen, Eddy; Put, Sofie; Claeys, Cor (2008)

Study of breakdown effects in silicon multiguard structures

Da Rold, Martina; Bacchetta, N.; Bisello, D.; Paccagnella, A.; Dalla Betta, G. F.; Verzellesi, G.; Militaru, O.; Wheadon, R.; Fuochi, P. G.; Bozzi, C.; Dell'Orso, R.; Messineo, A.; Tonelli, G.; Verdini, P. G. (1999)

The impact of plasma-charging damage on the RF performance of deep-submicron MOSFET

Pantisano, Luigi; Cheung, K. P.; Roussel, Philippe; Paccagnella, A. (2002)