Browsing Articles by imec author "50999a38ef05db4fad12ffb9c25bb108b04a95d3"
Now showing items 1-18 of 18
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A new direction for III-V FETs for mobile CPU operation uncluding burst-mode: In0.35Ga0.65As channel
Rakshit, T.; Obradovic, B.; Wang, W.-E.; Kim, Weon Hong; Shin, Keo Myoung; Baek, Seongcheol; Lee, Sung Woo; Kim, S.-H.; Lee, J.-M.; Kim, Daeyong; Hoover, A.; Song, W.-B.; Cantoro, M.; Heo, Y.-C.; Rooyackers, Rita; Ardila, S.C.; Vais, Abhitosh; Lin, Dennis; Collaert, Nadine; Rodder, M.S. (2017) -
A new quality metric for III-V/high-k MOS gate stacks based on the frequency dispersion of accumulation capacitance and the CET
Vais, Abhitosh; Franco, Jacopo; Martens, Koen; Lin, Dennis; Sioncke, Sonja; Putcha, Vamsi; Nyns, Laura; Maes, Jan; Xie, Qi; Givens, Michael; Tang, Fu; Jiang, Xiaoqiang; Mocuta, Anda; Collaert, Nadine; Thean, Aaron; De Meyer, Kristin (2017) -
A unified two-band model for oxide traps and interface states in MOS capacitors
Taur, Yuan; Chen, Han-Ping; Xie, Qian; Ahn, Jaesoo; McIntyre, Paul; Lin, Dennis; Vais, Abhitosh; Veskler, Dimitri (2015) -
An analytical model of MOS admittance for border trap density extraction in high-k dielectrics of III-V MOS devices
Vais, Abhitosh; Martens, Koen; Lin, Dennis; Mocuta, Anda; Collaert, Nadine; Thean, Aaron; De Meyer, Kristin (2016) -
Bias Temperature Instability (BTI) in high-mobility channel devices with high-k dielectric stacks: SiGe, Ge, and InGaAs
Franco, Jacopo; Kaczer, Ben; Vais, Abhitosh; Alian, AliReza; Arimura, Hiroaki; Putcha, Vamsi; Sioncke, Sonja; Waldron, Niamh; Zhou, Daisy; Nyns, Laura; Mitard, Jerome; Heyns, Marc; Groeseneken, Guido; Collaert, Nadine; Linten, Dimitri; Thean, Aaron (2016) -
Deducing the apparent flat-band position Vafb and the doping level of large area single layer graphene MOS capacitors
Lin, Dennis; Asselberghs, Inge; Vais, Abhitosh; Arutchelvan, G.; Delabie, Annelies; Heyns, Marc; Mocuta, Anda; Radu, Iuliana; Thean, Aaron (2015) -
Deep-level transient spectroscopy of GaAs nanoridge diodes grown on Si substrates
Syshchyk, Olga; Hsu, Brent; Yu, Hao; Motsnyi, Vasyl; Vais, Abhitosh; Kunert, Bernardette; Mols, Yves; Alcotte, Reynald; Puybaret, Renaud; Waldron, Niamh; Soussan, Philippe; Boulenc, Pierre; Karve, Gauri; Simoen, Eddy; Collaert, Nadine; Puers, Bob; Van Hoof, Chris (2020) -
Determination of energy and spatial distribution of oxide border traps in In0.53Ga0.47As MOS capacitors fron capacitance-voltage characteristics measured at various temperatures
Dou, Chunmeng; Lin, Dennis; Vais, Abhitosh; Ivanov, Tsvetan; Chen, Han-Ping; Martens, Koen; Kakushima, Kuniyuki; Iwai, Hiroshi; Taur, Yuan; Thean, Aaron; Groeseneken, Guido (2014) -
Effective contact resistivity reduction for Mo/Pd/n-In0.53Ga0.47As contact
Zhang, Jian; Wang, Linlin; Yu, Hao; Merckling, Clement; Mols, Yves; Vais, Abhitosh; Ramesh, Siva; Ivanov, Tsvetan; Schaekers, Marc; Horiguchi, Naoto; Mocuta, Dan; Collaert, Nadine; De Meyer, Kristin; Jiang, Yulong (2019) -
Extensive assessment of the charge-trapping kinetics in InGaAs MOS gate-stacks for the demonstration of improved BTI reliability
Putcha, Vamsi; Franco, Jacopo; Vais, Abhitosh; Kaczer, Ben; Xie, Qi; Maes, Jan Willem; Tang, Fu; Givens, Michael; Collaert, Nadine; Linten, Dimitri; Groeseneken, Guido (2020) -
High mobility In0.53Ga0.47As MOSFETs with steep sub-threshold slope achieved by remote reduction of native III-V oxides with metal electrodes
Yoshida, Shinichi; Lin, Dennis; Vais, Abhitosh; Alian, AliReza; Franco, Jacopo; El Kazzi, Salim; Mols, Yves; Miyanami, Yuki; Nakazawa, M.; Collaert, Nadine; Watanabe, H.; Thean, Aaron (2017) -
Impact of starting measurement voltage relative to flat-band voltage position on the capacitance-voltage hysteresis and on the defect characterization of InGaAs/high-k metal-oxide-semiconductor stacks
Vais, Abhitosh; Franco, Jacopo; Lin, Dennis; Collaert, Nadine; Mocuta, Anda; De Meyer, Kristin; Thean, Aaron (2015) -
Monolithic Integration of Nano-Ridge Engineered InGaP/GaAs HBTs on 300 mm Si Substrate
Mols, Yves; Vais, Abhitosh; Yadav, Sachin; Witters, Liesbeth; Vondkar Kodandarama, Komal; Alcotte, Reynald; Baryshnikova, Marina; Boccardi, Guillaume; Waldron, Niamh; Parvais, Bertrand; Collaert, Nadine; Langer, Robert; Kunert, Bernardette (2021-09-29) -
On MOS admittance modeling to study border trap capture/emission and its effect on electrical behavior of high-k/III-V MOS devices
Vais, Abhitosh; Martens, Koen; Lin, Dennis; Collaert, Nadine; Mocuta, Anda; De Meyer, Kristin; Thean, Aaron (2015) -
On the apparent non-Arrhenius temperature dependence of charge-trapping in IIIV/high-k MOS stack
Putcha, Vamsi; Franco, Jacopo; Vais, Abhitosh; Sioncke, Sonja; Kaczer, Ben; Linten, Dimitri; Groeseneken, Guido (2018) -
On the distribution of oxide defect levels in Al2O3 and HfO2 high-k dielectrics deposited on InGaAs Metal-Oxide-Semiconductor devices studied by Capacitance-Voltage hysteresis
Vais, Abhitosh; Franco, Jacopo; Lin, Dennis; Putcha, Vamsi; Sioncke, Sonja; Mocuta, Anda; Collaert, Nadine; Thean, Aaron; De Meyer, Kristin (2017) -
Systematic study of interfacial reactions induced by metal electrodes in high-k/InGaAs gate stacks
Yoshida, Shinichi; Lin, Dennis; Vais, Abhitosh; Alian, AliReza; Franco, Jacopo; El Kazzi, Salim; Mols, Yves; Miyanami, Yuki; Nakazawa, Masashi; Collaert, Nadine; Watanabe, H; Thean, Aaron (2016) -
Temperature dependence of frequency dispersion in III–V metal-oxide-semiconductor C-V and the capture/emission process of border traps
Vais, Abhitosh; Lin, Dennis; Dou, Chunmeng; Martens, Koen; Ivanov, Tsvetan; Xie, Qi; Tang, Fu; Givens, Michael; Maes, Jan; Collaert, Nadine; Raskin, Jean-Pierre; De Meyer, Kristin; Thean, Aaron (2015)