Browsing Articles by imec author "a06c05f120dc9846f2273329c61c503e9b572f30"
Now showing items 1-20 of 82
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A sensitivity map-based approach to profile defects in MIM capacitors from I-V, C-V and G-V measurements
Padovani, Andrea; Kaczer, Ben; Pesic, Milan; Belmonte, Attilio; Popovici, Mihaela Ioana; Nyns, Laura; Linten, Dimitri; Afanasiev, Valeri; Shlyakhov, Ilya; Lee, Younggon; Park, Hokyung; Larcher, Luca (2019) -
An electric field tunable energy band gap at silicene/(0001) ZnS interfaces
Houssa, Michel; van den Broek, Bas; Scalise, Emilio; Pourtois, Geoffrey; Afanasiev, Valeri; Stesmans, Andre (2013) -
Application of soft X-ray reflectometry for analysis of underlayer influence on structure of atomic-layer deposited SrTixOy films
Filatova, E.O.; Kozhevnikov, I.V.; Sokolov, A.A.; Konashuk, A.S.; Schaefers, F.; Popovici, Mihaela Ioana; Afanasiev, Valeri (2014) -
Band alignment and electron traps in Y2O3 layers on (100) Si
Wang, Wan Chih; Badylevitch, M.; Afanasiev, Valeri; Stesmans, Andre; Adelmann, Christoph; Van Elshocht, Sven; Kittl, Jorge; Lukosius, M.; Walczyk, Ch.; Wenger, Ch. (2009) -
Band alignment at the interface of (100)Si with HfxTa1-xOy high-k dielectric layers
Afanasiev, Valeri; Stesmans, Andre; Zhao, Chao; Caymax, Matty; Rittersma, Z.M.; Maes, Jan (2005) -
Band alignment between (100)Si and complex rare earth/transition metal oxides
Afanasiev, Valeri; Stesmans, Andre; Zhao, Chao; Caymax, Matty; Heeg, T.; Schubert, J.; Jia, Y.; Schlom, D.G.; Lucovsky, G. (2004) -
Band alignment between (100)Si and Hf-based complex metal oxides
Afanasiev, Valeri; Stesmans, Andre; Zhao, Chao; Caymax, Matty; Rittersma, Z.M.; Maes, Jan (2005) -
Band offsets at interfaces of (100)InxGa1-xAs (0<x<0.53) with Al2O3 and HfO2
Afanasiev, Valeri; Stesmans, Andre; Brammertz, Guy; Delabie, Annelies; Sioncke, Sonja; O'Mahony, E; Povey, I.M.; Pemble, M.E.; O'Connor, E.; Hurley, P.K.; Newcomb, S.B. (2009) -
Band offsets at the (100)GaSb/Al2O3 interface from internal electron photoemission study
Afanasiev, Valeri; Chou, H. C.; Stesmans, Andre; Merckling, Clement; Sun, Xiao (2011) -
Can silicon behave like graphene? A first-principles study
Houssa, Michel; Pourtois, Geoffrey; Afanasiev, Valeri; Stesmans, Andre (2010) -
Charge instability of atomic-layer deposited TaSiOx insulators on Si, InP, and In0.53Ga0.47As
Afanasiev, Valeri; Chou, H.Y.; Thoan, N.H.; Adelmann, Christoph; Lin, Dennis; Houssa, Michel; Stesmans, Andre (2012) -
Composition influence on the physical and electrical properties of SrxTi1-xOy-based MIM capacitors prepared by Atomic Layer Deposition using TiN bottom electrodes
Menou, Nicolas; Popovici, Mihaela Ioana; Clima, Sergiu; Opsomer, Karl; Polspoel, Wouter; Kaczer, Ben; Rampelberg, Geert; Tomida, Kazuyuki; Pawlak, Malgorzata; Detavernier, Christophe; Pierreux, Dieter; Swerts, Johan; Maes, Jan Willem; Manger, Dirk; Badylevich, M; Afanasiev, Valeri; Conard, Thierry; Favia, Paola; Bender, Hugo; Brijs, Bert; Vandervorst, Wilfried; Van Elshocht, Sven; Pourtois, Geoffrey; Wouters, Dirk; Biesemans, Serge; Kittl, Jorge (2009) -
Comprehensive investigation of trap-assisted conduction in ultra-thin SrTiO3 layers
Manger, Dirk; Kaczer, Ben; Menou, Nicolas; Clima, Sergiu; Wouters, Dirk; Afanasiev, Valeri; Kittl, Jorge (2009) -
Considerations for further scaling of metal–insulator–metal DRAM capacitors
Kaczer, Ben; Clima, Sergiu; Tomida, Kazuyuki; Govoreanu, Bogdan; Popovici, Mihaela Ioana; Kim, Min-Soo; Swerts, Johan; Wang, W. C.; Afanasiev, Valeri; Verhulst, Anne; Pourtois, Geoffrey; Groeseneken, Guido; Jurczak, Gosia (2013) -
Controlled sulfurization process for the synthesis of large area MoS2 films and MoS2-WS2 heterostructures
Chiappe, Daniele; Asselberghs, Inge; Sutar, Surajit; Iacovo, Serena; Afanasiev, Valeri; Stesmans, Andre; Balaji, Yashwanth; Peters, Lisanne; Heyne, Markus; Mannarino, Manuel; Vandervorst, Wilfried; Sayan, Safak; Huyghebaert, Cedric; Caymax, Matty; Heyns, Marc; De Gendt, Stefan; Radu, Iuliana; Thean, Aaron (2016) -
Defect generation in ultrathin SiON/ZrO2 gate dielectric stacks
Houssa, M.; Autran, J.L.; Afanasiev, Valeri; Stesmans, Andre; Heyns, Marc (2002) -
Defect localization of metal interconnection lines in 3-dimensional through-silicon-via structures by differential scanning photocapacitance microscopy
Jacobs, Kristof J.P.; Stucchi, Michele; Afanasiev, Valeri; Gonzalez, Mario; Croes, Kristof; De Wolf, Ingrid; Beyne, Eric (2018) -
Defect-induced bandgap narrowing in low-k dielectrics
Guo, X; Zheng, H; King, S; Afanasiev, Valeri; Baklanov, Mikhaïl; de Marneffe, Jean-Francois; Nishi, Y.; Shohet, J. (2015) -
Effect of binder content in Cu-In-Se precursor ink on the physical and electrical properties of printed CuInSe2 solar cells
Buffiere, Marie; Zaghi, A.E.; Lenaers, Nick; Batuk, M.; Khelifi, S.; Dijkoningen, J.; Hamon, J.; Stesmans, Andre; Kepa, J.; Afanasiev, Valeri; Hadermann, J.; D'Haen, Jan; Manca, Jean; Vleugels, J.; Meuris, Marc; Poortmans, Jef (2014) -
Effect of La doping on interface barrier between Si-passivated Ge and insulating HfO2
Kolomiiets, Nadiia; Afanasiev, Valeri; Madia, Oreste; Cott, Daire; Collaert, Nadine; Thean, Aaron; Stesmans, Andre (2016)