Browsing Articles by imec author "a06c05f120dc9846f2273329c61c503e9b572f30"
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Electrical characteristics of Ge/GeOx(N)/HfO2 gate stacks
Houssa, Michel; De Jaeger, Brice; Delabie, Annelies; Van Elshocht, Sven; Afanasiev, Valeri; Autran, J.L.; Stesmans, Andre; Meuris, Marc; Heyns, Marc (2005) -
Electron band alignment at the interface of (100)GaSb with molecular-beam deposited Al2O3
Afanasiev, Valeri; Chou, H.-Y.; Stesmans, Andre; Merckling, Clement; Sun, Xiao (2011) -
Electron barrier height at CuxTe1-x/Al2O3 interfaces of conducting bridgememory stacks
Afanasiev, Valeri; De Stefano, Francesca; Houssa, Michel; Stesmans, Andre; Goux, Ludovic; Opsomer, Karl; Kittl, Jorge; Jurczak, Gosia (2013) -
Electron spin resonance analysis of sputtering-induced defects in advanced low-k insulators (k-2.0-2.5)
Stesmans, Andre; Nguyen, A.; Houssa, Michel; Afanasiev, Valeri; Tokei, Zsolt; Baklanov, Mikhaïl (2013) -
Electron spin resonance study of defects in low-k oxide insulators (k = 2.5–2.0)
Afanasiev, Valeri; Keunen, K.; Stesmans, Andre; Jivanescu, M.; Tokei, Zsolt; Baklanov, Mikhaïl; Beyer, Gerald (2011) -
Electronic properties of Ge dangling bond centres at Si1-xGex/SiO2 interfaces
Afanasiev, Valeri; Houssa, Michel; Stesmans, Andre; Souriau, Laurent; Loo, Roger; Meuris, Marc (2009) -
Electrostatic potential perturbation at the polycrystalline Si/HfO2 interface
Afanasiev, Valeri; Stesmans, Andre; Pantisano, Luigi; P. J. Chen, (2005) -
Energy barriers at interfaces between (100) InxGa1-xAs(0<=x<=0.53) and atomic layer deposited Al2O3 and HfO2
Afanasiev, Valeri; Stesmans, Andre; Brammertz, Guy; Delabie, Annelies; Sioncke, Sonja; O'Mahony, E; Povey, I.M.; Pemble, M.E.; O'Connor, E.; Hurley, P.K.; Newcomb, S.B. (2009) -
Energy barriers at interfaces of 100GaAs with atomic layer deposited Al2O3 and HfO2
Afanasiev, Valeri; Badylevich, M; Stesmans, Andre; Brammertz, Guy; Delabie, Annelies; Sioncke, Sonja; O'Mahony, A; Povey, I M; Pemble, M E; O'Connor, E; Hurley, P; Newcomb, Simon (2008) -
First-principles electronic functionalization of silicene and germanene by adatom chemisorption
van den broek, Bas; Houssa, Michel; Scalise, Emilio; Pourtois, Geoffrey; Afanasiev, Valeri; Stesmans, Andre (2014) -
First-principles study of strained 2d MoS2
Scalise, Emilio; Houssa, Michel; Pourtois, Geoffrey; Afanasiev, Valeri; Stesmans, Andre (2014) -
First-principles study of the electronic properties of Ge dangling bonds at the (100) Si1xGex /SiO2 interfaces
Houssa, Michel; Afanasiev, Valeri; Stesmans, Andre; Pourtois, Geoffrey; Meuris, Marc; Heyns, Marc (2009) -
Flat-band voltage shift of Ruthenium gated stacks and its link with the formation of a thin Ruthenium oxide layer at the Ruthenium/dielectric interface
Li, Zilan; Schram, Tom; Pantisano, Luigi; Stesmans, Andre; Conard, Thierry; Shamuilia, Sheron; Afanasiev, Valeri; Akheyar, Amal; Van Elshocht, Sven; Brunco, David; Deweerd, Wim; Naoki, Yamada; Lehnen, Peer; De Gendt, Stefan; De Meyer, Kristin (2007-02) -
Forming gas anneal induced flat-band voltage shift of metal-oxide-semiconductor stacks and its link with hydrogen incorporation in metal gates
Li, Zilan; Schram, Tom; Pantisano, Luigi; Witters, Thomas; Stesmans, Andre; Akheyar, Amal; Afanasiev, Valeri; Yamada, Naoki; Tsunoda, Takaaki; De Gendt, Stefan; De Meyer, Kristin (2007) -
GaSb molecular beam epitaxial growth on p-InP(001) and passivation with in situ deposited Al2O3 gate oxide
Merckling, Clement; Sun, Xiao; Alian, AliReza; Brammertz, Guy; Afanasiev, Valeri; Hoffmann, Thomas Y.; Heyns, Marc; Caymax, Matty; Dekoster, Johan (2011) -
High-k dielectrics for future generation memory devices
Kittl, Jorge; Opsomer, Karl; Popovici, Mihaela Ioana; Menou, Nicolas; Kaczer, Ben; Wang, Xin Peng; Adelmann, Christoph; Pawlak, Malgorzata; Tomida, Kazuyuki; Rothschild, Aude; Govoreanu, Bogdan; Degraeve, Robin; Schaekers, Marc; Zahid, Mohammed; Delabie, Annelies; Meersschaut, Johan; Polspoel, Wouter; Clima, Sergiu; Pourtois, Geoffrey; Knaepen, W.; Detavernier, C.; Afanasiev, Valeri; Blomberg, T.; Pierreux, Dieter; Swerts, Johan; Fischer, Pamela; Maes, Jan; Manger, Dirk; Vandervorst, Wilfried; Conard, Thierry; Franquet, Alexis; Favia, Paola; Bender, Hugo; Brijs, Bert; Van Elshocht, Sven; Jurczak, Gosia; Van Houdt, Jan; Wouters, Dirk (2009) -
High-resolution electron spin resonance analysis of ion bombardment induced defects in advanced low-k insulators (k=2.0-2.5)
Afanasiev, Valeri; Nguyen, A.; Houssa, M.; Stesmans, Andre; Tokei, Zsolt; Baklanov, Mikhaïl (2013) -
Hydrogen induced dipole at the Pt/oxide interface in MOS devices
Kolomiiets, N.; Afanasiev, Valeri; Opsomer, Karl; Houssa, Michel; Stesmans, Andre (2016) -
Impact of annealing-induced compaction on electronic properties of atomic-layer-deposited Al2O3
Afanasiev, Valeri; Stesmans, Andre; Mrstik, B.J.; Zhao, Chao (2002) -
Impact of crystallization behavior of SrxTiyOz films on electrical properties of metal-insulator-metal capacitors with TiN electrodes
Pawlak, Malgorzata; Kaczer, Ben; Kim, Min-Soo; Popovici, Mihaela Ioana; Tomida, Kazuyuki; Swerts, Johan; Opsomer, Karl; Polspoel, Wouter; Favia, Paola; Vrancken, Christa; Demeurisse, Caroline; Wang, W.-C.; Afanasiev, Valeri; Vandervorst, Wilfried; Bender, Hugo; Debusschere, Ingrid; Altimime, Laith; Kittl, Jorge (2010)