Browsing Articles by imec author "a62c69c3a7e310de5b19d9226496e4649a07d978"

-1 V bias 67 GHz bandwidth si-contacted germanium waveguide p-i-n photodetector for optical links at 56 Gbps and beyond

Chen, Hongtao; Verheyen, Peter; De Heyn, Peter; Lepage, Guy; De Coster, Jeroen; Balakrishnan, Sadhishkumar; Absil, Philippe; Yao, W.; Shen, L.; Roelkens, Gunther; Van Campenhout, Joris (2016-03)

100-Gbps RZ data reception in 67-Ghz si-contacted germanium waveguide p-i-n photodetectors

Chen, Hongtao; Galili, M.; Verheyen, Peter; De Heyn, Peter; Lepage, Guy; Dekoster, Johan; Balakrishnan, Sadhishkumar; Absil, Philippe; Oxenlowe, L.; Van Campenhout, Joris; Roelkens, Gunther (2017-02)

25-Gb/s 1310-nm optical receiver based on a sub-5-V waveguide-coupled germanium avalanche photodiode

Chen, Hongtao; Verbist, Jochem; Verheyen, Koen; De Heyn, Peter; Lepage, Guy; De Coster, Jeroen; Absil, Philippe; Moeneclaey, Bart; Yin, Xin; Bauwelinck, Johan; Van Campenhout, Joris; Roelkens, Gunther (2015-08)

56 Gb/s NRZ O-Band Hybrid BiCMOS-Silicon Photonics Receiver Using Ge/si Avalanche Photodiode

Srinivasan, Ashwyn; Lambrecht, Joris; Guermandi, Davide; Lardenois, Sebastien; Berciano, Mathias; Absil, Philippe; Bauwelinck, Johan; Yin, Xin; Pantouvaki, Marianna; Van Campenhout, Joris (2021)

56Gb/s germanium waveguide electro-absorption modulator

Srinivasan, Ashwyn; Pantouvaki, Marianna; Gupta, Shashank; Chen, Hongtao; Verheyen, Peter; Lepage, Guy; Roelkens, Gunther; Saraswat, Krishna; Van Thourhout, Dries; Absil, Philippe; Van Campenhout, Joris (2016)

Achieving low-VT Ni-FUSI CMOS via Lanthanide incorporation in the gate stack

Veloso, Anabela; Yu, HongYu; Lauwers, Anne; Chang, Shou-Zen; Adelmann, Christoph; Onsia, Bart; Demand, Marc; Brus, Stephan; Vrancken, Christa; Singanamalla, Raghunath; Lehnen, Peer; Kittl, Jorge; Kauerauf, Thomas; Vos, Rita; O'Sullivan, Barry; Van Elshocht, Sven; Mitsuhashi, Riichirou; Whittemore, G.; Yin, K.M.; Niwa, Masaaki; Hoffmann, Thomas; Absil, Philippe; Jurczak, Gosia; Biesemans, Serge (2008)

Active components for 50Gb/s NRZ-OOK optical interconnects in a silicon photonics platform

Pantouvaki, Marianna; Srinivasan, Ashwyn; Ban, Yoojin; De Heyn, Peter; Verheyen, Peter; Lepage, Guy; Chen, Hongtao; De Coster, Jeroen; Golshani, Negin; Balakrishnan, Sadhishkumar; Absil, Philippe; Van Campenhout, Joris (2017)

Advanced CMOS device technologies for 45nm node and below

Veloso, Anabela; Hoffmann, Thomas; Lauwers, Anne; Yu, HongYu; Severi, Simone; Augendre, Emmanuel; Kubicek, Stefan; Verheyen, Peter; Collaert, Nadine; Absil, Philippe; Jurczak, Gosia; Biesemans, Serge (2007)

Benchmarking SOI and bulk FinFET alternatives for PLANAR CMOS scaling succession

Chiarella, Thomas; Witters, Liesbeth; Mercha, Abdelkarim; Kerner, Christoph; Rakowski, Michal; Ortolland, Claude; Ragnarsson, Lars-Ake; Parvais, Bertrand; De Keersgieter, An; Kubicek, Stefan; Redolfi, Augusto; Vrancken, Christa; Brus, Stephan; Lauwers, Anne; Absil, Philippe; Biesemans, Serge; Hoffmann, Thomas Y. (2010)

Broadband 10Gb/s operation of graphene electro-absorption modulator on silicon

Hu, Yingtao; Pantouvaki, Marianna; Van Campenhout, Joris; Brems, Steven; Asselberghs, Inge; Huyghebaert, Cedric; Absil, Philippe; Van Thourhout, Dries (2016)

Compact thermally tunable silicon racetrack modulators based on a asymmetric waveguide

Yu, Hiu; Pantouvaki, Marianna; Dwivedi, Sarvagya Paavan; Verheyen, Peter; Lepage, Guy; Baets, Roel; Bogaerts, Wim; Absil, Philippe; Van Campenhout, Joris (2013-01)

Comparison of silicon ring modulators with interdigitated and lateral PN junctions

Pantouvaki, Marianna; Yu, Hui; Rakowski, Michal; Christie, Phillip; Verheyen, Peter; Lepage, Guy; Van Hoovels, Nele; Absil, Philippe; Van Campenhout, Joris (2013)

Controlled orientation of molecular-beam-epitaxial BaTiO3 on Si(001) using thickness engineering of BaTiO3 and SrTiO3 buffer layers

Hsu, Mark; Van Thourhout, Dries; Pantouvaki, Marianna; Meersschaut, Johan; Conard, Thierry; Richard, Olivier; Bender, Hugo; Favia, Paola; Vila Santos, Maria; Cid Barreno, Rosalia; Rubio-Zuazo, Juan; R. Castro, German; Van Campenhout, Joris; Absil, Philippe; Merckling, Clement (2017-05)

Cost effective low Vt Ni-FUSI CMOS on SiON by means of Al implant (pMOS) and Yb+P implant (nMOS)

Lauwers, Anne; Veloso, Anabela; Chang, Shou-Zen; Yu, HongYu; Hoffmann, Thomas Y.; Kerner, Christoph; Demand, Marc; Rothschild, Aude; Niwa, Masaaki; Satoru, Ito; Mitshashi, Riichirou; Ameen, Mike; Whittemore, Graham; Pawlak, Malgorzata; Vrancken, Christa; Demeurisse, Caroline; Mertens, Sofie; Vandervorst, Wilfried; Absil, Philippe; Biesemans, Serge; Kittl, Jorge (2008)

Dark current analysis in high-speed germanium p-i-n waveguide photodetectors

Chen, Hongtao; Verheyen, Peter; De Heyn, Peter; Lepage, Guy; De Coster, Jeroen; Balakrishnan, Sadhishkumar; Absil, Philippe; Roelkens, Gunther; Van Campenhout, Joris (2016)

Demonstration of low Vt Ni-FUSI N-MOSFETs with SiON dielectrics by using a Dy2O3 cap layer

Yu, HongYu; Chang, Shou-Zen; Veloso, Anabela; Lauwers, Anne; Adelmann, Christoph; Onsia, Bart; Lehnen, Peer; Kauerauf, Thomas; Brus, Stephan; Absil, Philippe; Biesemans, Serge (2007-11)

Demonstration of metal-gated low Vt n-MOSFETs using a Poly-Si/TaN/Dy2O3/SiON gate stack with a scaled EOT value

Yu, HongYu; Singanamalla, Raghunath; Ragnarsson, Lars-Ake; Chang, Vincent; Cho, Hag-Ju; Mitsuhashi, Riichirou; Adelmann, Christoph; Van Elshocht, Sven; Lehnen, Peer; Chang, Shou-Zen; Yin, K.M.; Schram, Tom; Kubicek, Stefan; De Gendt, Stefan; Absil, Philippe; De Meyer, Kristin; Biesemans, Serge (2007)