Browsing by Author "Alian, AliReza"
- Results per page
- Sort Options
Publication 6.1 family: the next generation of III-V semiconductors for advanced CMOS applications: epitaxial growth and passivation challenges
Meeting abstract2012, AVS 59th Annual International Symposium and Exhibition, 28/10/2012Publication A defect characterization technique for the sidewall surface of Nano-ridge and Nanowire based Logic and RF technologies
Proceedings paper2021, IEEE International Reliability Physics Symposium (IRPS), MAR 21-24, 2021Publication A near- & short-wave IR tunable InGaAs nanomembrane photoFET on flexible substrate for lightweight and wide-angle imaging applications
Proceedings paper2018, VLSI Technology Symposium, 18/06/2018, p.159-160Publication A TCAD low-field electron mobility model for thin-body InGaAs on InP MOSFETs calibrated to experimental characteristics
Journal article2015, IEEE Transactions on Electron Devices, (62) 11, p.3645-3652Publication AC transconductance dispersion (ACGD): a method to profile oxide traps in MOSFETs without body contact
; ; ; ; ; Ma, T.P.Journal article2012, IEEE Electron Device Letters, (33) 3, p.438-440Publication Advanced channel materials for the semiconductor industry
Proceedings paper2015, IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference - S3S, 4/10/2015, p.1-5Publication Advanced transistors for high frequency applications
Proceedings paper2020, 237th ECS Spring Meeting - Advanced CMOS-compatible Semiconductor Devices 19, 10/05/2020, p.27-38Publication Ammonium sulfide vapor passivation of In0.53Ga0.47As and InP surfaces
; ; ; ; Publication An investigation on border traps in III-V MOSFETs with an In0.53Ga0.47As channel
Journal article2015, IEEE Transactions on Electron Devices, (62) 11, p.3633-3639Publication Analog parameters of solid source Zn diffusion InXGa1-XAs nTFETs down to 10K
Journal article2016, Semiconductor Science and Technology, (31) 12, p.124001Publication Analysis of border traps in high-k gate dielectrics on high-mobility channels
Proceedings paper2013, 28th Symposium on Microelectronics Technology and Devices - SBMICRO, 2/09/2013, p.300-304Publication Analysis of gate-metal resistance in CMOS-compatible RF GaN HEMTs
Journal article2020, IEEE Transactions on Electron Devices, (67) 11, p.4592-4596Publication Analysis of the Gate Current's Influence on the RF Power Performance of InAlN/GaN HEMTs
Journal article2025, IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, (73) 2, p.779-788Publication Analysis of the transistor efficiency of gas phase Zn diffusion In0.53Ga0.47As nTFETs at different temperatures
Proceedings paper2017, Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon - EUROSOI-ULIS, 3/04/2017, p.109-112Publication Analytical model of thin-body InGaAs MOSFET low-field electron mobility for integration in TCAD models
Proceedings paper2015, Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon - EUROSOI-ULIS, 26/01/2015, p.241-244Publication Atomic layer deposition of high-k dielectric layers on Ge and III-V MOS channels
Proceedings paper2008, SiGe, Ge, and Related Compounds 3: Materials, Processing, and Devices, 12/10/2008, p.671-685Publication Back Barrier Trapping Induced Resistance Dispersion in GaN HEMT: Mechanism, Modeling, and Solutions
Proceedings paper2022-12-01, International Electron Devices Meeting (IEDM), DEC 03-07, 2022Publication Bandlike and localized states of extended defects in n-type In0.53Ga0.47As
Journal article2018, Journal of Applied Physics, (124) 16, p.165707Publication Beyond interface: the impact of oxide border traps on InGaAs and Ge n-MOSFETs
Proceedings paper2012, International Electron Devices Meeting - IEDM, 10/12/2012, p.28.3Publication Beyond-Si materials and devices for more Moore and more than Moore applications
Proceedings paper2016, International Conference on IC Design and Technology - ICICDT, 27/06/2016, p.1-5