Browsing by Author "Altimime, Laith"
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Publication 10x10nm2 Hf/HfOx crossbar resistive RAM with excellent performance, reliability and low-energy operation
Proceedings paper2011, IEEE International Electron Devices Meeting - IEDM, 5/12/2011, p.729-732Publication A comparative study of the microstructure–dielectric properties of crystalline SrTiO3 ALD films obtained via seed layer approach
Journal article2011, Physica Status Solidi A, (208) 8, p.1920-1924Publication A low-voltage biasing scheme for aggressively scaled bulk FinFET 1T-DRAM featuring 10s retention at 85°C
Proceedings paper2010, IEEE Symposium on VLSI Technology, 15/06/2010, p.161-162Publication A novel low-voltage biasing scheme for double gate FBC achieving 5s retention and 10^16 endurance at 85°C
Proceedings paper2010, IEEE International Elecrton Devices Meeting - IEDM, 6/12/2010, p.288-291Publication Advanced capacitor dielectrics: towards 2x nm DRAM
Proceedings paper2011-05, 3rd International Memory Workshop - IMW, 22/05/2011, p.42-45Publication ALD Ru and its applications in DRAM MIM-capacitors and interconnect
Proceedings paper2011, China Semiconductor Technology International Conference - CSTIC, 13/03/2011, p.509-514Publication ALD strontium titanates and their characterization
Oral presentation2010, International Workshop on Power Supply On ChipPublication Balancing SET/RESET pulse for >1010 endurance in HfO2 / Hf 1T1R bipolar RRAM
Journal article2012, IEEE Transactions on Electron Devices, (59) 12, p.3243-3249Publication BJT mode endurance on a 1T-RAM bulk FinFET device
; ; ; Journal article2010, IEEE Electron Device Letters, (31) 12, p.1380-1382Publication Compositional study of BaSrTiO thin films for memory application
Proceedings paper2010, 41st IEEE Semiconductor Interface Specialists Conference - SISC, 2/12/2010Publication Conductive bridge random access memory technology
Publication Controlled growth of rutile TiO2 by atomic layer deposition on oxidized ruthenium
Journal article2011, Physica Status Solidi. Rapid Research Letters, (5) 1, p.19-21Publication Deterministic and stochastic component in RESET transient of HfSiO/FUSI gate RRAM stack
Proceedings paper2011, Symposium on VLSI Technology, 13/06/2011, p.28-30Publication Dynamic 'Hour Glass' model for SET and RESET in HfO2 RRAM
; ; ; ; ; Proceedings paper2012, Symposium on VLSI Technology - VLSIT, 12/06/2012, p.75-76Publication Effect of interface states on 1T-FBRAM cell retention
Proceedings paper2012, IEEE International Reliability Physics Symposium - IRPS, 15/04/2012, p.MY-1Publication Enabling 3X nm DRAM: Record low leakage 0.4 nm EOT MIM capacitors with novel stack engineering
Proceedings paper2010, IEEE International Electron Devices Meeting - IEDM, 6/12/2010, p.277-280Publication Evidences of anodic-oxidation reset mechanism in TiN\NiO\Ni RRAM cells
Proceedings paper2011, Symposium on VLSI Technology, 13/06/2011, p.24-25Publication Evidences of oxygen-mediated resistive-switching mechanism in TiN\HfO2\Pt cells
Journal article2010, Applied Physics Letters, (97) 24, p.243509Publication Field-driven ultrafast sub-ns programming in W\Al2O3\Ti\CuTe-based 1T1R CBRAM system
Proceedings paper2012, Symposium on VLSI Technology - VLSIT, 12/06/2012, p.69-70
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