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Browsing by Author "Banerjee, Sreetama"

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    Chemical Vapor Deposition of a Single-Crystalline MoS2 Monolayer through Anisotropic 2D Crystal Growth on Stepped Sapphire Surface

    Kandybka, Iryna  
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    Groven, Benjamin  
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    Medina Silva, Henry  
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    Sergeant, Stefanie  
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    Nalin Mehta, Ankit  
    Journal article
    2024, ACS NANO, (18) 4, p.3173-3186
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    Direct Assessment of Defective Regions in Monolayer MoS2 Field-Effect Transistors through In Situ Scanning Probe Microscopy Measurements

    Minj, Albert  
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    Koladi Mootheri, Vivek  
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    Banerjee, Sreetama  
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    Nalin Mehta, Ankit  
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    Serron, Jill  
    Journal article
    2024, ACS NANO, (18) 15, p.10653-10666
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    Graphene based Van der Waals contacts on MoS(2)field effect transistors

    Koladi Mootheri, Vivek  
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    Arutchelvan, Goutham  
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    Banerjee, Sreetama  
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    Sutar, Surajit  
    Journal article
    2021, 2D MATERIALS, (8) 1, p.015003
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    Measurement of direct and indirect bandgaps in synthetic ultrathin MoS2 and WS2 films from photoconductivity spectra

    Shlyakhov, Ilya  
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    Iakoubovskii, K.
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    Banerjee, Sreetama
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    Gaur, Abhinav  
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    Lin, Dennis  
    Journal article
    2021, JOURNAL OF APPLIED PHYSICS, (129) 15, p.155302
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    Nucleation and coalescence of tungsten disulfide layers grown by metalorganic chemical vapor deposition

    Tang, Haonan
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    Pasko, Sergej
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    Krotkus, Simonas
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    Anders, Thorsten
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    Wockel, Cornelia
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    Mischke, Jan
    Journal article
    2023, JOURNAL OF CRYSTAL GROWTH, (608) April, p.Art. 127111
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    Processing Stability of Monolayer WS2 on SiO2

    Delie, G.
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    Chiappe, D.
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    Asselberghs, Inge  
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    Huyghebaert, Cedric  
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    Radu, Iuliana  
    Journal article
    2021, NANO EXPRESS, (2) 2, p.024004
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    Reactive plasma cleaning and restoration of transition metal dichalcogenide monolayers

    Marinov, Daniil
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    de Marneffe, Jean-Francois  
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    Smets, Quentin  
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    Arutchelvan, Goutham  
    Journal article
    2021, NPJ 2D MATERIALS AND APPLICATIONS, (5) 1, p.17
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    Sources of variability in scaled MoS2 FETs

    Smets, Quentin  
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    Verreck, Devin  
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    Shi, Yuanyuan  
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    Arutchelvan, Goutham  
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    Groven, Benjamin  
    Proceedings paper
    2020, IEEE International Electron Devices Meeting (IEDM), DEC 12-18, 2020
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    Superior electrostatic control in uniform monolayer MoS2 scaled transistors via in-situ surface smoothening

    Shi, Yuanyuan  
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    Groven, Benjamin  
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    Smets, Quentin  
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    Sutar, Surajit  
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    Banerjee, Sreetama  
    Proceedings paper
    2021, IEEE International Electron Devices Meeting (IEDM), DEC 11-16, 2021
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    The sapphire surface structure and its impact on MOCVD grown wafer-scale MoS2 uniformity and MOSFET variability

    Shi, Yuanyuan  
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    Groven, Benjamin  
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    Serron, Jill  
    ;
    Han, Han  
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    Banerjee, Sreetama  
    ;
    Wu, Xiangyu  
    Oral presentation
    2019, IEEE International Electron Devices Meeting

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