Browsing by Author "Bellenger, Florence"

Atomic layer deposition of hafnium based gate dielectric layers for CMOS applications

Atomic layer deposition of high-k dielectric layers on Ge and III-V MOS channels

Atomic layer deposition of high-k dielectric layers on Ge and III-V MOS channels

Challenges for atomic layer deposition in CMOS devices with high-mobility channel materials

Effective electrical passivation of Ge(100) for high-k gate dielectric layers using germanium oxide

Electrical passivation of the (100)Ge surface by its thermal oxide

Electronic structure of GeO2-passivated interfaces of (100)Ge with Al2O3 and HfO2

Extrinsic interface formation of HfO2 and Al2O3 /GeOx gate stacks on Ge (100) substrates

First-principles investigation of (100)Ge/Ge(Hf)O2 interfaces

Ge and III/V devices on Si for advanced CMOS

Ge and III/V: the CMOS of the future

Ge FETs gate stack passivation options and their scalability to low EOT

Germanium FETs and capacitors with rare earth CeO2/HfO2 gates

Germanium for advanced CMOS anno 2009: a SWOT analysis

Germanium MOSFETs with CeO2/HfO2/TiN gate stacks

H2O and O3 based atomic layer deposition of high-k dielectric layers on high mobility substrates

H2O- and O3-based atomic layer deposition of high-K dielectric films on GeO2 passivation layers

H2S molecular beam passivation of Ge(001)

High FET performance for a future CMOS GeO2-based technology

High mobility channel materials and novel devices for scaling of nanoelectronics beyond the Si roadmap