Browsing by Author "Besling, Wim"
- Results Per Page
- Sort Options
Publication Atomic layer deposition of barriers for interconnect
Publication Characterisation of AlCVD Al2O3-ZrO2 nanolaminates, link between electrical and structural properties
Journal article2002, Journal of Non-Crystalline Solids, (303) 1, p.123-133Publication Characterisation of AlCVD-Al2O3 and ZrO2 layer using X-ray photoelectron spectroscopy
Journal article2002, Journal of Non-Crystalline Solids, (303) 1, p.83-87Publication Characterization of ALCVD Al2O3-ZrO2 nanolaminates, link between electrical and structural properties
Oral presentation2001, Symposium Q of the E-MRS Spring Meeting 2001: High-k Gate Dielectrics; June 5-8, 2001; Strasbourg, France.Publication Characterization of AlCVD-Al2O3 and ZrO2 layer using X-ray photoelectron spectroscopy
Oral presentation2001, Symposium Q of the E-MRS Spring Meeting 2001: High-k Gate Dielectrics; June 5-8, 2001; Strasbourg, France.Publication Development of sub-10-nm atomic layer deposition barriers for Cu/low-k interconnects
Journal article2002, Microelectronic Engineering, (64) 1_4, p.233-245Publication Growth mechanism and continuity of atomic layer deposited TiN films on thermal SiO2
Journal article2002, Journal of Applied Physics, (92) 12, p.7641-7646Publication In-line electrical metrology for high-k gate dielectrics deposited by atomic layer CVD
Journal article2003, Journal of the Electrochemical Society, (150) 9, p.F169-F172Publication In-line electrical metrology for high-k gate dielectrics deposited by atomic layer CVD
Meeting abstract2002, 201st Meeting of the Electrochemical Society. Rapid Thermal and Other Short Time Processing Technologies III, 12/05/2002, p.719Publication Integration issues of polysilicon with high k dielectrics deposited by Atomic Layer Chemical Vapor Deposition
Proceedings paper2002, Semiconductor Silicon 2002. Proceedings of the 9th International Symposium on Silicon Materials Science and Technology, 12/05/2002, p.747-760Publication Physical characterization of high-k gate stacks deposited on HF-last surfaces
Proceedings paper2001, Ectended Abstracts of the International Workshop on Gate Insulator. IWGI 2001, 1/11/2001, p.86-92Publication Thermal stability and scalability of zr-aluminate-based high-k gate stacks
Publication TOFSIMS as a monitor for thin film growth
Oral presentation2001, 13th International Conference on Secondary Ion Mass Spectrometry - SIMS 13; 11-16 November 2001; Nara, Japan.