Browsing by Author "Bisi, Davide"

Analysis of slow de-trapping phenomena after a positive gate bias on AlGaN/GaN MIS-HEMTs with in-situ Si3N4/Al2O3 bilayer gate dielectrics

Breakdown investigation in GaN-based MIS-HEMT devices

Impact of gate insulator on the dc and dynamic performance of AlGaN/GaN MIS-HEMTs

Investigation of the impact of hot electrons and high drain bias on the dynamic Ron increase in GaN-based MIS-HEMTs grown on silicon

Kinetics of buffer-related RON-increase in GaN-on-silicon MIS-HEMTs

Negative bias-induced threshold voltage instability (NBTI) in GaN-on-Si power HEMTs

Reliability and parasitic issues in GaN-based power HEMTs

Ron collapse, breakdown and degradation of d-mode MIS-HEMTs based on GaN on Si technology

Transient performance, breakdown and degradation of power transistors GaN on Si technology

Trapping and reliability assessment in d-mode GaN-based MIS-HEMTs for power applications

Trapping and reliability issues in GaN-based MIS HEMTs with partially recessed gate

Trapping in GaN-based MIS-HEMTs: role of high drain bias and hot electrons

Trapping mechanisms in GaN-based MIS-HEMTs grown on silicon substrate