Browsing by Author "Bogaerts, Annemie"
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Publication A density functional theory simulation of the formation of Ni-doped fullerenes by ion
Journal article2011, Carbon, (49) 3, p.1013-1017Publication Characterization of nano-crystalline diamond films grown under continuous DC bias during plasma enhanced chemical vapor deposition
Proceedings paper2010, Diamond Electronics and Bioelectronics - Fundamentals to Applications III, 30/11/2009, p.1203-J05-03Publication Comparison of CF4, CHF3, and CH2F2 plasmas used for wafer processing
Meeting abstract2012, 65th Gaseous Electronics Conference - GEC, 22/10/2012, p.20Publication Computer simulations of SiCl4/O2 ICP discharges used for coatings deposition or mask damage recovery
Meeting abstract2012, Plasma Etch and Strip in Microelectronics - PESM, 15/03/2012Publication Etching of low-k materials for microelectronics applications by means of a N2/H2 plasma: Modeling and experimental investigation
Journal article2013, Plasma Sources Science and Technology, (22) 2, p.25011Publication Investigation of etching and deposition processes of Cl2/O2/Ar inductively coupled plasmas on silicon by means of plasma–surface simulations and experiments
Journal article2009, Journal of Physics D: Applied Physics, 42, p.95204-95217Publication Investigations on the plasma-surface interaction during atomic layer etching of thin transition-metal dichalcogenide films
Proceedings paper2015, 22nd International Symposium on Plasma Chemistry, 5/07/2015Publication Layer on photoresist lines with an Ar/SiCl4/O2 inductively coupled plasma: a modeling investigation
Journal article2014, Plasma Processes and Polymers, (11) 1, p.52-62Publication Mechanisms for plasma cryogenic etching of porous materials
Journal article2017, Applied Physics Letters, (111) 17, p.173104Publication Modeling and experimental investigation of the plasma uniformity in CF4/O2 capacitively coupled plasmas, operating in single frequency and dual frequency regime
Journal article2015, Journal of Vacuum Science and Technology A, (33) 2, p.21310Publication Modeling Ar/Cl2/O2 and Ar/SiH4/O2 Inductively Coupled Plasmas used for anisotropic etching of silicon and deposition of SiOx
Proceedings paper2010, 20th ESCAMPIG, 13/07/2010Publication Modeling fluorocarbon plasmas used for etching of Si
Meeting abstract2013, Plasma Etch and Strip in Microtechnology - PESM, 14/03/2013Publication Modeling Sicl4/O2 plasmas used for depositing SiO2 coatings or mask recovery
Proceedings paper2012, 11th Europhysics Conference on the Atomic and Molecular Physics of Ionized Gases - ESCAMPIG XXI, 10/07/2012, p.P2.3.1Publication Modeling the influence of gas composition in an Ar/Cl2/O2 inductively coupled plasma used for STI etching
Meeting abstract2010, 3rd workshop on Plasma Etch and Strip in Microelectronics - PESM, 4/03/2010Publication New mechanism for oxidation of native silicon oxide
Journal article2013, Journal of Physical Chemistry C, (117) 19, p.9819-9825Publication Probing the impact of material properties of core-shell SiO2@TiO2 spheres on the plasma-catalytic CO2 dissociation using a packed bed DBD plasma reactor
Journal article2021, JOURNAL OF CO2 UTILIZATION, 46, p.101468Publication Simulating plasma + surface processes for the etching of silicon wtih an Ar/Cl2/O2 inductively coupled plasma
Meeting abstract2011, 4th International Workshop on Plasma Etch and Strip in Microelectronics - PESM, 5/05/2011Publication Simulation of Ar/Cl2/O2 inductively coupled plasmas used for anisotropic etching of silicon
Meeting abstract2009, 2nd International Plasma Etch and Strip in Microelectronics Workshop - PESM, 26/02/2009