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Browsing by Author "Bogaerts, Annemie"

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    A density functional theory simulation of the formation of Ni-doped fullerenes by ion

    Neyts, Erik
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    Maeyens, Axel
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    Pourtois, Geoffrey  
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    Bogaerts, Annemie
    Journal article
    2011, Carbon, (49) 3, p.1013-1017
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    Characterization of nano-crystalline diamond films grown under continuous DC bias during plasma enhanced chemical vapor deposition

    Mortet, Vincent
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    Zhang, Liang
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    Echert, Maxie
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    Soltani, Ali
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    D'Haen, Jan  
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    Douheret, Olivier
    Proceedings paper
    2010, Diamond Electronics and Bioelectronics - Fundamentals to Applications III, 30/11/2009, p.1203-J05-03
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    Comparison of CF4, CHF3, and CH2F2 plasmas used for wafer processing

    Tinck, Stefan
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    Milenin, Alexey  
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    Bogaerts, Annemie
    Meeting abstract
    2012, 65th Gaseous Electronics Conference - GEC, 22/10/2012, p.20
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    Computer simulations of SiCl4/O2 ICP discharges used for coatings deposition or mask damage recovery

    Tinck, Stefan
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    Bogaerts, Annemie
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    Boullart, Werner  
    Meeting abstract
    2012, Plasma Etch and Strip in Microelectronics - PESM, 15/03/2012
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    Etching of low-k materials for microelectronics applications by means of a N2/H2 plasma: Modeling and experimental investigation

    Samara, Vladimir
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    Van Laer, Koen
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    Tinck, Stefan
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    de Marneffe, Jean-Francois  
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    Bogaerts, Annemie
    Journal article
    2013, Plasma Sources Science and Technology, (22) 2, p.25011
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    Investigation of etching and deposition processes of Cl2/O2/Ar inductively coupled plasmas on silicon by means of plasma–surface simulations and experiments

    Tinck, Stefan
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    Boullart, Werner  
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    Bogaerts, Annemie
    Journal article
    2009, Journal of Physics D: Applied Physics, 42, p.95204-95217
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    Investigations on the plasma-surface interaction during atomic layer etching of thin transition-metal dichalcogenide films

    Heyne, Markus
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    de Marneffe, Jean-Francois  
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    Meersschaut, Johan  
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    Nuytten, Thomas  
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    Radu, Iuliana  
    Proceedings paper
    2015, 22nd International Symposium on Plasma Chemistry, 5/07/2015
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    Layer on photoresist lines with an Ar/SiCl4/O2 inductively coupled plasma: a modeling investigation

    Tinck, Stefan
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    Altamirano Sanchez, Efrain  
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    De Schepper, Peter  
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    Bogaerts, Annemie
    Journal article
    2014, Plasma Processes and Polymers, (11) 1, p.52-62
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    Mechanisms for plasma cryogenic etching of porous materials

    Zhang, Quan-Zi
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    Tinck, Stefan
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    de Marneffe, Jean-Francois  
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    Zhang, Liping  
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    Bogaerts, Annemie
    Journal article
    2017, Applied Physics Letters, (111) 17, p.173104
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    Modeling and experimental investigation of the plasma uniformity in CF4/O2 capacitively coupled plasmas, operating in single frequency and dual frequency regime

    Zhang, Yu-Ru
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    Tinck, Stefan
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    De Schepper, Peter  
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    Wang, You-Nian
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    Bogaerts, Annemie
    Journal article
    2015, Journal of Vacuum Science and Technology A, (33) 2, p.21310
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    Modeling Ar/Cl2/O2 and Ar/SiH4/O2 Inductively Coupled Plasmas used for anisotropic etching of silicon and deposition of SiOx

    Tinck, Stefan
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    Bogaerts, Annemie
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    Boullart, Werner  
    Proceedings paper
    2010, 20th ESCAMPIG, 13/07/2010
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    Modeling fluorocarbon plasmas used for etching of Si

    Tinck, Stefan
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    Milenin, Alexey  
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    Bogaerts, Annemie
    Meeting abstract
    2013, Plasma Etch and Strip in Microtechnology - PESM, 14/03/2013
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    Modeling Sicl4/O2 plasmas used for depositing SiO2 coatings or mask recovery

    Tinck, Stefan
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    Boullart, Werner  
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    Bogaerts, Annemie
    Proceedings paper
    2012, 11th Europhysics Conference on the Atomic and Molecular Physics of Ionized Gases - ESCAMPIG XXI, 10/07/2012, p.P2.3.1
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    Modeling the influence of gas composition in an Ar/Cl2/O2 inductively coupled plasma used for STI etching

    Tinck, Stefan
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    Bogaerts, Annemie
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    Boullart, Werner  
    Meeting abstract
    2010, 3rd workshop on Plasma Etch and Strip in Microelectronics - PESM, 4/03/2010
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    New mechanism for oxidation of native silicon oxide

    Khalilov, Umedjon
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    Pourtois, Geoffrey  
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    Huygh, Stijn
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    van Duin, A.C.T.
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    Neyts, E.C.
    Journal article
    2013, Journal of Physical Chemistry C, (117) 19, p.9819-9825
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    Probing the impact of material properties of core-shell SiO2@TiO2 spheres on the plasma-catalytic CO2 dissociation using a packed bed DBD plasma reactor

    Kaliyappan, Periyasamy
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    Paulus, Andreas  
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    D'Haen, Jan
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    Samyn, Pieter
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    Uytdenhouwen, Yannick
    Journal article
    2021, JOURNAL OF CO2 UTILIZATION, 46, p.101468
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    Simulating plasma + surface processes for the etching of silicon wtih an Ar/Cl2/O2 inductively coupled plasma

    Tinck, Stefan
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    Bogaerts, Annemie
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    Boullart, Werner  
    Meeting abstract
    2011, 4th International Workshop on Plasma Etch and Strip in Microelectronics - PESM, 5/05/2011
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    Simulation of Ar/Cl2/O2 inductively coupled plasmas used for anisotropic etching of silicon

    Tinck, Stefan
    ;
    Bogaerts, Annemie
    ;
    Boullart, Werner  
    Meeting abstract
    2009, 2nd International Plasma Etch and Strip in Microelectronics Workshop - PESM, 26/02/2009

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