Browsing by Author "Cacciato, Antonio"
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Publication A consistent model for the SANOS programming operation
Proceedings paper2007, 22nd Non-Voltaile Semiconductor Memory Workshop - NVSMW, 27/08/2007, p.96-97Publication A novel PEALD tunnel dielectric for three-dimensional non-volatile charge-trapping technology
Proceedings paper2010, IEEE Semiconductor Interface Specialists Conference - SISC, 2/12/2010Publication A novel PEALD tunnel dielectric for three-dimensional non-volatile charge-trapping technology
Journal article2011, Electrochemical and Solid-State Letters, (14) 7, p.271-273Publication An ultra-thin hybrid floating gate concept for sub-20nm NAND flash technologies
Proceedings paper2011, 3rd International memory Workshop - IMW, 22/05/2011, p.22-25Publication Band edge work function metal gates using PEALD TaCN electrodes
Oral presentation2009, 9th International Conference on Atomic Layer Deposition - ALDPublication Effect of Al203 morphology on the erase saturation performance in SANOS-type memory cells
Proceedings paper2007, Proceedings 2nd International Conference on Memory Technology and Design - ICMTD, 7/05/2007, p.217-220Publication Effect of high temperature annealing on tunnel oxide properties in TANOS devices
Journal article2011, Microelectronic Engineering, (88) 7, p.1155-1158Publication Effect of top dielectric morphology and gate material on the performance of nitride-based FLASH memory cells
Proceedings paper2008, Materials Science and Technology for Nonvolatile Memories, 24/03/2008, p.1071-F02-08Publication Experimental evaluation of trapping efficiency in silicon nitride based charge trapping memories
Proceedings paper2009, 39th European Solid-State Device Research Conference - ESSDERC, 14/09/2009, p.276-279Publication Explanation of anomalous erase behaviour and the associated device instability in TANOS Flash using a new trap characterization technique
Proceedings paper2009-10, International Conference on Solid State Devices and Materials - SSDM, 7/10/2009Publication Exploration of rare earth materials for future interpoly dielectric replacement in Flash memory devices
Proceedings paper2010, IEEE International Memory Workshop - IMW, 16/05/2010, p.130-133Publication High performance THANVaS memories for MLC charge trap NAND flash
Proceedings paper2011, 3rd International Memory Workshop - IMW, 22/05/2011, p.69-72Publication Highly scaled vertical cylindrical SONOS cell with bi-layer poly-silicon channel for 3D NAND flash memory
Journal article2011, IEEE Electron Device Letters, (32) 11, p.1501-1503Publication Hybrid floating gate cell for sub-20-nm NAND flash memory technology
Journal article2012, IEEE Electron Device Letters, (33) 3, p.333-335Publication Improvement of TANOS NAND Flash performance by the optimazation of a sealing layer
Proceedings paper2008, Joint Non-Volatile Semiconductor Memory Workshop and International Conference on Memory Technology and Design - NVSMW-ICMTD, 19/05/2008, p.126-127Publication Introducing lanthanide aluminates as dielectrics for non-volatile memory applications: A material scientist's view
Meeting abstract2010, 218th Electrochemical Society Meeting, 10/10/2010, p.1487Publication Investigation of rare-earth aluminates as alternative trapping materials in flash memories
Proceedings paper2010, 40th European Solid-State Device Research Conference - ESSDERC, 13/09/2010, p.436-439Publication Investigation of window instability in program/erase cycling of TANOS NAND Flash memory
Proceedings paper2009-05, International Memory Workshop - IMW, 10/05/2009, p.84-85Publication Lanthanide aluminates as dielectrics for non-volatile memory applications: material aspects
Journal article2011, Journal of the Electrochemical Society, (158) 8, p.H778-H784Publication Metal gates and high-k interpoly dielectrics for hybrid floating gate memory applications
Meeting abstract2012, MRS Spring Symposium E: Materials and Physics of Emerging Nonvolatile Memories, 9/04/2012, p.E1.2