Browsing by Author "Chatterjee, Urmimala"
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Publication 200 V GaN-on-SOI Smart Power Platform for Monolithic GaN Power ICs
; ; ; ; ; Proceedings paper2021, IEEE International Electron Devices Meeting (IEDM), DEC 11-16, 2021Publication 3D thermal model with high spatial and temporal resolution
Proceedings paper2012, 27th European Photovoltaic Solar Energy Conference and Exhibition - EUPVSEC, 24/09/2012, p.1339-1342Publication 3D thermal modeling for a photovoltaic module
Proceedings paper2011, 26th European Photovoltaic Solar Energy Conference and Exhibition - EU PVSEC, 5/11/2011, p.3310-3313Publication A fully integrated half-bridge driver circuit in All-GaN GAN-IC technology
Journal article2023, SOLID-STATE ELECTRONICS, (207) September, p.Art. 108707Publication AlON gate dielectric and gate trench cleaning for improved relia-bility of vertical GaN MOSFET
Proceedings paper2022, 12th International Conference on Integrated Power Electronics Systems - CIPS, 15th to 17th of March 2022Publication An E-mode p-GaN HEMT monolithically-integrated three-level gate driver operating with a single voltage supply
Journal article2021, IEICE ELECTRONICS EXPRESS, (18) 6, p.20210059Publication An Introduction to Wire-bondless Discrete GaN Power Packages with Top-Side Cu Sinterconnects®
Publication Analysis of inverter architectures in a GaN-IC technology
Proceedings paper2024, 11th Workshop on Wide Bandgap Power Devices and Applications, NOV 04-06, 2024Publication ASCENT plus European Infrastructure for Nanoelectronics: a Deep Dive to All-GaN IC Technology for Power Electronics Extended abstract
; Fagas, GiorgosProceedings paper2021, 28th International Conference on Mixed Design of Integrated Circuits and System (MIXDES), JUN 24-26, 2021, p.13-13Publication Characterization of Enhancement-Mode Asymmetrical GaN Transistor Half Bridge in High Frequency Operation
Proceedings paper2021, 23rd European Conference on Power Electronics and Applications (EPE ECCE Europe), SEP 06-10, 2021Publication Development and analysis of thick GaN drift layers on 200 mm CTE-matched substrate for vertical device processing
Journal article2023, SCIENTIFIC REPORTS, (13) N/, p.Art. 15931Publication Device optimization for 200V GaN-on-SOI Platform for Monolithicly Integrated Power Circuits
Proceedings paper2022, 52nd IEEE European Solid-State Device Research Conference (ESSDERC), SEP 19-22, 2022, p.245-248Publication Effect of insolation on the thermal behaviour of the IPERC and the MWT cell
Oral presentation2012, I-CAMP 12 Summer School on Renewable & Sustainable EnergyPublication Electrical Stability of MOS Structures With AlON and Al2O3 Dielectrics Deposited on n-and p-Type GaN
Journal article2024, IEEE TRANSACTIONS ON ELECTRON DEVICES, (71) 9, p.5212-5217Publication Impact of doping and geometry on breakdown voltage of semi-vertical GaN-on-Si MOS capacitors
Journal article2022, MICROELECTRONICS RELIABILITY, (138) November, p.Art. 114620Publication Influence of Driver Integration on GaN Enhancement Mode Transistor Performance
Proceedings paper2020, IEEE 21st Workshop on Control and Modeling for Power Electronics (COMPEL), NOV 09-12, 2020, p.480-485Publication Influence of driver integration on GaN enhancement mode transistor performance
Proceedings paper2020, 21st IEEE Workshop on Control and Modeling for Power Electronics - COMPEL, 9/11/2020Publication Mg activation anneal of the p-GaN body in trench gate MOSFETs and its effect on channel mobility and threshold voltage stability
Journal article2024, APPLIED PHYSICS LETTERS, (124) 11, p.Art. 113502Publication Monolithic 650-V Dual-Gate p-GaN Bidirectional Switch
Journal article2024, IEEE TRANSACTIONS ON ELECTRON DEVICES, (71) 11, p.6904-6909Publication Route Toward Commercially Manufacturable Vertical GaN Devices
Journal article2024, IEEE TRANSACTIONS ON ELECTRON DEVICES, (71) 3, p.1488-1493