Browsing by Author "Decoutere, Stefaan"
- Results per page
- Sort Options
Publication 1.2 kV Enhancement-Mode p-GaN Gate HEMTs on 200 mm Engineered Substrates
Journal article2024, IEEE ELECTRON DEVICE LETTERS, (45) 4, p.657-660Publication 200 mm industrial-ready dispersion-free GaN-on-Si buffer technology for 650 V rated power application
Meeting abstract2019, 13th International Conference on Nitride Semiconductors 2019 (ICNS-13), 7/07/2019Publication 200 V enhancement-mode p-GaN HEMTs fabricated on 200 mm GaN-on-SOI with trench isolation for monolithic integration
; ; ; Publication 200 V enhancement-mode p-GaN HEMTs fabricated on 200 mm GaN-on-SOI with trench isolation for monolithic integration
; ; ; Publication 200 V GaN-on-SOI Smart Power Platform for Monolithic GaN Power ICs
; ; ; ; ; Proceedings paper2021, IEEE International Electron Devices Meeting (IEDM), DEC 11-16, 2021Publication 200mm GaN-on-Si epitaxy and e-mode device technology
Proceedings paper2015, International Electron Devices Meeting - IEDM, 7/12/2015, p.16.2Publication 24GHz LNA in 90nm RF-CMOS with high-Q above-IC inductors
Proceedings paper2005-09, Proceedings of the 31st European Solid-State Circuits Conference - ESSCIRC, 12/09/2005, p.89-92Publication 2kV breakdown voltage GaN-on-Si DHFETs with sub-micron thick AlGaN Buffer
Proceedings paper2012, International Conference on Compound Semiconductor MANufacturing TECHnology - MANTECH, 23/04/2012Publication 3-D device electrothermal simulation for analysis of multifinger power HEMTs
Publication 45nm planar bulk CMOS 23GHz LNA with above IC inductors
Proceedings paper2010, IEEE International Conference on Circuits ans Systems - ISCAS, 30/05/2010, p.741-744Publication 650 V dispersion-free enhancement-mode GaN-on-Si HEMTs processed in a 200 mm CMOS fab
Proceedings paper2017, 14th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS, 1/11/2017, p.172-174Publication 650 V p-GaN gate power HEMTs on 200 mm engineered substrates
Proceedings paper2019, 7th Workshop on Wide Bandgap Power Devices and Applications - WIPDA 2019, 29/10/2019, p.292-296Publication 90nm RF CMOS technology for low-power 900MHz applications
Proceedings paper2004, Proceedings of the 34th European Solid-State Device Research Conference - ESSDERC, 21/09/2004, p.329-332Publication A 0.25μm SiGe BiCMOS technology including integrated RF passive components optimised for low power applications
Proceedings paper2003, 33rd European Solid-State Devices Research Conference - ESSDERC, 16/09/2003Publication A 0.35µm BiCMOS process with selective epitaxial SiGe bipolar transistors
Proceedings paper1999, ESSDERC'99 - Proceedings of the 29th European Solid-State Device Research Conference; 13-15 September 1999; Leuven, Belgium., p.436-439Publication A 0.35μm BiCMOS technology with 50 GHz Fmax selective epitaxial base transistors for RF applications
Proceedings paper1998, Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting, 27/09/1998, p.124-127Publication A 0.35μm SiGe BiCMOS process featuring a 80 GHz Fmax HBT and integrated high-Q RF passive components
Proceedings paper2000, Proceedings Bipolar/BiCMOS Circuits and Technology Meeting - BCTM, 24/09/2000, p.106-109Publication A 1 V 23 GHz low-noise amplifier in 45 nm planar bulk-CMOS technology with high-Q above-IC inductors
Journal article2009, IEEE Microwave and Wireless Components Letters, (19) 5, p.326-328Publication A 328 uW5 GHz voltage-controlled oscillator in 90 nm CMOS with high-quality thin-film post-processed inductor
Proceedings paper2004-06, Proceedings of the IEEE 2004 Custom Integrated Circuits Conference - CICC, 17/06/2004, p.701-704Publication A 400GHz fMAX fully self-aligned SiGe:C HBT architecture
Proceedings paper2009-10, IEEE Bipolar/BiCMOS Circuits and Technology Meeting - BCTM, 13/10/2009, p.5-8