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Browsing by Author "Donaton, R. A."

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    Co silicide formation on SiGeC/Si and SiGe/Si layers

    Donaton, R. A.
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    Maex, Karen  
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    Vantomme, Andre  
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    Langouche, G.
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    Morciaux, Y.
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    St. Amour, A.
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    Sturm, J. C.
    Journal article
    1997, Applied Physics Letters, 70, p.1266-1268
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    Comparison of Co silicidation on SiGe and SiGeC alloys

    Donaton, R. A.
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    Maex, Karen  
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    Vantomme, Andre  
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    St. Amour, A.
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    Sturm, J. C.
    Oral presentation
    1996, Materials Research Society Spring Meeting. Symposium F on GeSi and Related Compounds; April 9-11, 1996; San Francisco, Calif., U
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    CoSi2 formation in the presence of interfacial silicon oxide

    Detavernier, C.
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    Van Meirhaeghe, R. L.
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    Cardon, F.
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    Donaton, R. A.
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    Maex, Karen  
    Journal article
    1999, Appl. Phys. Lett., (74) 20, p.2930-32
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    Critical issues in the integration of Copper and low-k dielectrics

    Donaton, R. A.
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    Coenegrachts, Bart  
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    Maex, Karen  
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    Struyf, Herbert  
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    Vanhaelemeersch, Serge  
    Proceedings paper
    1999, Proceedings of the International Interconnect Technology Conference - IITC; San Francisco, CA, USA., p.262-264
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    EFTEM study of plasma etched low-k Si-O-C dielectrics

    Hens, S.
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    Bender, Hugo  
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    Donaton, R. A.
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    Maex, Karen  
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    Vanhaelemeersch, Serge  
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    Van Landuyt, J.
    Proceedings paper
    2001, Microscopy of Semiconducting Materials - MSMXII, 25/03/2001, p.415-418
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    Electrical evaluation and TEM/SEm investigation of a bottomless I-PVD Ta(N) barrier in a damascene architecture

    Yamagishi, Hajime
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    Tokei, Zsolt  
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    Beyer, Gerald  
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    Donaton, R. A.
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    Bender, Hugo  
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    Nogami, T.
    Oral presentation
    2000, Advanced Metallization Conference; October 2000; San Diego, CA, USA.
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    Electron microscopic studies of Co- and Ti-germanosilicide films formed on SiGe layers

    Jin, S.
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    Donaton, R. A.
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    Bender, Hugo  
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    Maex, Karen  
    Proceedings paper
    1998, Electron Microscopy of Semiconducting Materials and ULSI Devices, 15/04/1998, p.133-138
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    Electronic Transport in Metallic Iron Disilicide

    Kyllesbech Larsen, K.
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    Van Hove, Marleen
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    Lauwers, A.
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    Donaton, R. A.
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    Maex, Karen  
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    Van Rossum, Marc
    Journal article
    1994, Phys. Rev. B, 50, p.14200-14211
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    Formation of continuous and ultra-thin PtSi layers for infrared detector applications

    Donaton, R. A.
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    Jin, S.
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    Bender, Hugo  
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    Maex, Karen  
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    Vantomme, Andre  
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    Langouche, G.
    Oral presentation
    1998, Workshop on Nanoscale Characterization of Silicide/Semiconductor Contacts by Scanning Probe Microscopy; 24 Sept. 1998; Gent, Bel
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    Formation of ultra-thin PtSi layers with a 2-step silicidation process

    Donaton, R. A.
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    Jin, S.
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    Bender, Hugo  
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    Zagrebnov, Maxim
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    Baert, Kris
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    Maex, Karen  
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    Vantomme, Andre  
    Journal article
    1997, Microelectronic Engineering, 37/38, p.507-514
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    Growth of epitaxial b-FeSi2 on (100) silicon using Fe-Ti-Si diffusion couples

    Kyllesbech Larsen, K.
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    Tavares, J.
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    Bender, Hugo  
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    Donaton, R. A.
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    Lauwers, A.
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    Maex, Karen  
    Journal article
    1995, J. Appl. Phys., (78) 1, p.599-601
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    High Q inductor add-on module in thick Cu/SiLK/sup TM/ single damascene

    Jenei, Snezana
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    Decoutere, Stefaan  
    ;
    Winderickx, Gillis  
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    Struyf, Herbert  
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    Tokei, Zsolt  
    Proceedings paper
    2001, Proceedings of the IEEE International Interconnect Technology Conference, 4/06/2001, p.107-109
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    Integration of a low permittivity spin-on embedded hardmask for Cu/SiLK resin dual damascene

    Waeterloos, Joost
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    Shaffer, E. O.
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    Stokich, T.
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    Hetzner, J.
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    Price, D.
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    Booms, L.
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    Donaton, R. A.
    Proceedings paper
    2001, Proceedings of the IEEE 2001 International Interconnect Technology Conference, 1/06/2001, p.60-62
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    Integration of Cu and low-K dielectrics: effect of hard mask and dry etch on electrical performance of damascene structures

    Donaton, R. A.
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    Coenegrachts, Bart  
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    Maenhoudt, Mireille
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    Pollentier, Ivan  
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    Struyf, Herbert  
    Journal article
    2001, Microelectronic Engineering, (55) 1_4, p.277-283
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    Integrations of Cu and low-k dielectrics: effect of hard mask dry etch and post-CMP clean on electrical performance of damascene structures

    Donaton, R. A.
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    Coenegrachts, Bart  
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    Maenhoudt, Mireille
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    Pollentier, Ivan  
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    Struyf, Herbert  
    Oral presentation
    2000, Materials for Advanced Metallization Conference - MAM; February 28 - March 1, 2000; Stresa, Italy.
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    Interaction between Co and SiO2

    Kondoh, Eiichi
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    Donaton, R. A.
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    Jin, S.
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    Bender, Hugo  
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    Vandervorst, Wilfried  
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    Maex, Karen  
    Journal article
    1998, Applied Surface Science, (32) 3_4, p.87-94
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    Ion-bombardment effects on PtSi/n-Si Schottky contacts studied by ballistic electron emission microscopy

    Ruttens, Gerlinde
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    Qu, X. P.
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    Zhu, S. Y.
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    Li, Bing-Zong
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    Detavernier, C.
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    Van Meirhaeghe, R. L.
    Journal article
    2000, J. Vacuum Science and Technology B, (18) 4, p.1942-1948
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    Ion-induced amorphization and regrowth of C49 and C54 TiSi2

    Mohadjeri, Babak
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    Maex, Karen  
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    Donaton, R. A.
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    Bender, Hugo  
    Journal article
    1999, J. Electrochem. Soc., (146) 3, p.1122-1129
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    Maki-Thompson corrections in thin superconducting PtSi films nearby T-c

    Kvon, Z. D.
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    Baturina, T. I.
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    Donaton, R. A.
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    Baklanov, Mikhaïl
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    Kostrikin, M. N.
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    Maex, Karen  
    Journal article
    2000, Physica B, 284 Part 1, p.959-960
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    Material characteristics and damascene patterning of a fluoropolymer low-k film

    Struyf, Herbert  
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    Donaton, R. A.
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    Lepage, Muriel
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    Lanckmans, Filip
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    Vereecke, Guy  
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    Maex, Karen  
    Oral presentation
    2000, Advanced Metallization Conference; October 2000; San Diego, CA, USA.
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