Browsing by Author "Donaton, R. A."
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Publication Co silicide formation on SiGeC/Si and SiGe/Si layers
;Donaton, R. A.; ; ;Langouche, G. ;Morciaux, Y. ;St. Amour, A.Sturm, J. C.Journal article1997, Applied Physics Letters, 70, p.1266-1268Publication Comparison of Co silicidation on SiGe and SiGeC alloys
Oral presentation1996, Materials Research Society Spring Meeting. Symposium F on GeSi and Related Compounds; April 9-11, 1996; San Francisco, Calif., UPublication CoSi2 formation in the presence of interfacial silicon oxide
Journal article1999, Appl. Phys. Lett., (74) 20, p.2930-32Publication Critical issues in the integration of Copper and low-k dielectrics
Proceedings paper1999, Proceedings of the International Interconnect Technology Conference - IITC; San Francisco, CA, USA., p.262-264Publication EFTEM study of plasma etched low-k Si-O-C dielectrics
Proceedings paper2001, Microscopy of Semiconducting Materials - MSMXII, 25/03/2001, p.415-418Publication Electrical evaluation and TEM/SEm investigation of a bottomless I-PVD Ta(N) barrier in a damascene architecture
Oral presentation2000, Advanced Metallization Conference; October 2000; San Diego, CA, USA.Publication Electron microscopic studies of Co- and Ti-germanosilicide films formed on SiGe layers
Proceedings paper1998, Electron Microscopy of Semiconducting Materials and ULSI Devices, 15/04/1998, p.133-138Publication Electronic Transport in Metallic Iron Disilicide
;Kyllesbech Larsen, K. ;Van Hove, Marleen ;Lauwers, A. ;Donaton, R. A.; Van Rossum, MarcJournal article1994, Phys. Rev. B, 50, p.14200-14211Publication Formation of continuous and ultra-thin PtSi layers for infrared detector applications
Oral presentation1998, Workshop on Nanoscale Characterization of Silicide/Semiconductor Contacts by Scanning Probe Microscopy; 24 Sept. 1998; Gent, BelPublication Formation of ultra-thin PtSi layers with a 2-step silicidation process
;Donaton, R. A. ;Jin, S.; ;Zagrebnov, Maxim ;Baert, Kris; Journal article1997, Microelectronic Engineering, 37/38, p.507-514Publication Growth of epitaxial b-FeSi2 on (100) silicon using Fe-Ti-Si diffusion couples
Journal article1995, J. Appl. Phys., (78) 1, p.599-601Publication High Q inductor add-on module in thick Cu/SiLK/sup TM/ single damascene
Proceedings paper2001, Proceedings of the IEEE International Interconnect Technology Conference, 4/06/2001, p.107-109Publication Integration of a low permittivity spin-on embedded hardmask for Cu/SiLK resin dual damascene
;Waeterloos, Joost ;Shaffer, E. O. ;Stokich, T. ;Hetzner, J. ;Price, D. ;Booms, L.Donaton, R. A.Proceedings paper2001, Proceedings of the IEEE 2001 International Interconnect Technology Conference, 1/06/2001, p.60-62Publication Integration of Cu and low-K dielectrics: effect of hard mask and dry etch on electrical performance of damascene structures
Journal article2001, Microelectronic Engineering, (55) 1_4, p.277-283Publication Integrations of Cu and low-k dielectrics: effect of hard mask dry etch and post-CMP clean on electrical performance of damascene structures
Oral presentation2000, Materials for Advanced Metallization Conference - MAM; February 28 - March 1, 2000; Stresa, Italy.Publication Interaction between Co and SiO2
Journal article1998, Applied Surface Science, (32) 3_4, p.87-94Publication Ion-bombardment effects on PtSi/n-Si Schottky contacts studied by ballistic electron emission microscopy
;Ruttens, Gerlinde ;Qu, X. P. ;Zhu, S. Y. ;Li, Bing-Zong ;Detavernier, C.Van Meirhaeghe, R. L.Journal article2000, J. Vacuum Science and Technology B, (18) 4, p.1942-1948Publication Ion-induced amorphization and regrowth of C49 and C54 TiSi2
Journal article1999, J. Electrochem. Soc., (146) 3, p.1122-1129Publication Maki-Thompson corrections in thin superconducting PtSi films nearby T-c
Journal article2000, Physica B, 284 Part 1, p.959-960Publication Material characteristics and damascene patterning of a fluoropolymer low-k film
Oral presentation2000, Advanced Metallization Conference; October 2000; San Diego, CA, USA.