Browsing by Author "El-Sayed, Al-Moatasem"
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Publication Ab initio treatment of silicon-hydrogen bond rupture at Si/SiO2 interfaces
Journal article2019, Physical Review B, (100) 19, p.195302Publication Bi-modal variability of nFinFET characteristics during hot-carrier stress: a modeling approach
Journal article2019, IEEE Electron Device Letters, (40) 10, p.1579-1582Publication Border trap based modeling of SiC transistor transfer characteristics
Proceedings paper2018, International Integrated Reliability Workshop (IIRW), 7/11/2018, p.1-5Publication Enhancing the quality of low temperature SiO2 by atomic hydrogen exposure for excellent NBTI reliability
Meeting abstract2020, 51st IEEE Semiconductor Interface Specialists Conference (SISC), 16/12/2020, p.12.4Publication Quantum Chemistry Treatment of Silicon-Hydrogen Bond Rupture by Nonequilibrium Carriers in Semiconductor Devices
Journal article2021-01, PHYSICAL REVIEW APPLIED, (16) 1, p.014026-1-014026-24Publication Single-Versus Multi-Step Trap Assisted Tunneling Currents-Part II: The Role of Polarons
Publication Stochastic modeling of hot-carrier degradation in nFinFETs considering the impact of random traps and random dopants
Proceedings paper2019, ESSDERC 2019 - 49th European Solid-State Device Research Conference, 23/09/2019, p.262-265Publication Stochastic modeling of the impact of random dopants on hot-carrier degradation in n-FinFETs
Journal article2019, IEEE Electron Device Letters, (40) 6, p.870-873Publication Structure, electronic properties, and energetics of oxygen vacancies in varying concentrations of SixGe1-xO2
Journal article2022, PHYSICAL REVIEW MATERIALS, (6) 12, p.nn-Art. 125002Publication Understanding and physical modeling superior hot-carrier reliability of Ge pNWFETs
Proceedings paper2019, IEEE Internaitonal Electron Devices Meeting - IEDM, 7/12/2019, p.21.3.1-21.3.4