Browsing by Author "Fahle, Dirk"

650 V p-GaN gate power HEMTs on 200 mm engineered substrates

Demonstration of High-quality GaN Epitaxy on 200 mm Engineered Substrates for Vertical Power Device Fabrication

Development and analysis of thick GaN drift layers on 200 mm CTE-matched substrate for vertical device processing

Epitaxial buffer structures grown on 200 mm engineering substrates for 1200 V E-mode HEMT application

Epitaxial growth and characterization of P-GaN gated HEMT on compliant poly-AlN substrate for e-mode power devices

Epitaxial growth by MOCVD on 200 mm engineered substrates for power devices & ICs beyond 650 V

Growth and characterization of buffer structures for AlGaN/GaN-based heterostructure field effect transistors

Growth and characterization of buffer structures for AlGaN/GaN-based heterostructure field effect transistors

Growth and characterization of buffer structures for high power enhancement-mode AlGaN/GaN HEMT

Integration of 650 V GaN power ICs on 200 mm engineered substrates

Integration of GaN power ICs on 200 mm engineered substrates

p-GaN e-mode HEMT power device manufacturing on 200mm substrates using aixtron AIX G5+C MOCVD system

Vertical GaN devices: Process and reliability