Browsing by Author "Fiegna, Claudio"
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Publication A distributed electrical model for interdigitated back contact silicon solar cells
Proceedings paper2014, Proceedigns of the 4th International Conference on Crystalline Silicon Photovoltaics - SiliconPV, 25/03/2014, p.71-76Publication GaN HEMT with p-Type Schottky Gate: A Case Study of TCAD Modeling of the Gate Leakage Current
Publication Investigation of the p-GaN gate breakdown in forward-biased GaN-based power HEMTs
Journal article2017, IEEE Electron Device Letters, (38) 1, p.99-102Publication Optimization of rear point contact geometry by means of 3-D numerical simulation
Proceedings paper2012, 2nd International Conference on Crystalline Silicon Photovoltaics - SiliconPV, 4/04/2012, p.197-202Publication PBTI in GaN-HEMT's with p-type gate: role of the aluminum content on DVtH and underlying degradation mechanisms
Journal article2018, IEEE Transactions on Electron Devices, (65) 1, p.38-44Publication Perimeter Driven Transport in the p-GaN Gate as a Limiting Factor for Gate Reliability
Proceedings paper2019-04, IEEE International Reliability Physics Symposium (IRPS), 31/03/2019, p.4D4.1-4D4.10Publication Threshold Voltage Instability in GaN HEMTs with p-type Gate: Mg Doping Compensation
Journal article2019, IEEE Electron Device Letters, (4) 40, p.518-521Publication Understanding the degradation sources under ON-state stress in AlGaN/GaN-on-Si SBD: Investigation of the anode-cathode apacing length dependence
Proceedings paper2016, IEEE International Reliability Physics Symposium, 17/04/2016, p.4A.5Publication Understanding the influence of busbars in large-area IBC solar cells by distributed SPICE simulations
Journal article2015, IEEE Journal of Photovoltaics, (5) 2, p.552-558