Browsing by Author "Fleetwood, Daniel"
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Publication Capacitance-frequency estimates of border-trap densities in multi-fin MOS capacitors
Publication Effects of negative-bias-temperature-instability on low-frequency noise in SiGe p MOSFETs
Publication Electrical effect of a single extended defect in MOSFETs: a simulation study
Journal article2016, IEEE Transactions on Electron Devices, (63) 8, p.3069-3075Publication Gate bias and length dependences of total-ionizing-dose effects in InGaAs FinFETs on bulk Si
Proceedings paper2018-09, Radiation Effects on Components and Systems - RADECS, 16/09/2018Publication Impacts of through-silicon vias on total-ionizing-dose effects and low-frequency noise in FinFETs
Proceedings paper2020, Nuclear & Space Radiation Effects Conference - NSREC, 20/07/2020, p.PC-6Publication Interface and border traps in Ge pMOSFETs
Meeting abstract2012, ECS Fall Meeting Symposium E6: High Purity Silicon 12, 7/10/2012, p.2637Publication Radiation effects in advanced multiple-gate and silicon-on-insulator transistors
Journal article2013, IEEE Transactions on Nuclear Science, (60) 3, p.1970-1991Publication Total ionizing dose effects on strained Ge pMOS FinFETs on bulk Si
Meeting abstract2016-07, IEEE Nuclear Space and Radiation Conference - NSREC, 13/07/2016Publication X-Ray and proton radiation effects on 40 nm CMOS physically unclonable function devices
Journal article2018, IEEE Transactions on Nuclear Science, (65) 8, p.1519-1524