Browsing by Author "Gaubas, Eugenijus"
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Publication A simple technique for the separation of bulk and surface recombination parameters in silicon
Publication Analysis of the diffusion currrent in cobalt silicided n+p junctions
Meeting abstract1998, Belgische Natuurkundige Vereniging / Société Belge de Physique: General Scientific Meeting, 19/05/1998, p.CM34Publication Carrier lifetime spectrocopy for defect characterization in semiconductor materials and devices
Journal article2016, ECS Journal of Solid State Science and Technology, (5) 4, p.P3108-P3137Publication Characterisation of high-energy proton irradiation induced recombination centers in silicon
Proceedings paper1996, Proceedings of the 6th Autumn Meeting Gettering and Defect Engineering in Semiconductor Technology - GADEST'95, 2/09/1995, p.371-376Publication Correlation between radiation induced defects and lifetime degradation in high energy particle exposed float-zone silicon diodes
Meeting abstract1998, Belgische Natuurkundige Vereniging / Société Belge de Physique: General Scientific Meeting, 19/05/1998, p.CM31Publication Defect analysis of strained silicon on thin strain-relaxed buffer layers for high mobility Transistors
Oral presentation2004, Workshop on Defects Relevant to Engineering Advanced Silicon-based Devices - CADRESPublication Defect analysis of strained silicon on thin strain-relaxed buffer layers for high mobility transistors
Journal article2005, Journal of Physics: Condensed Matter, (17) 22, p.S2197-S2210Publication Diode assessment of material characteristics in internally gettered and non-gettered Czochralski silicon: problems, pitfalls and guidelines
Proceedings paper1998, 2nd International Conference on Materials for Microelectronics - ICMM, 14/09/1998, p.42-51Publication Effect of shallow junction on the extraction of the minority carrier recombination lifetime from forward diode characteristics
Meeting abstract2002, Belgische Natuurkundige Vereniging / Société Belge de Physique: General Scientific Meeting, 5/06/2002, p.CM1-14Publication Electrical characterisation of shallow cobalt-silicided junctions
Proceedings paper2000, 3rd International Conference Materials for Microelectronics, 16/10/2000, p.7-10Publication Electrical characterization of shallow cobalt-silicided junctions
Journal article2001, Journal of Materials Science: Materials in Electronics, (12) 4_6, p.207-10Publication Excess carrier cross-sectional profiling technique for determination of the surface recombination velocity
Oral presentation2000, International Conference on Electronic Materials & European Materials Research Society Spring Meeting. Symposium M: Advanced ChaPublication Excess carrier cross-sectional profiling technique for determination of the surface recombination velocity
Journal article2001, Materials Science in Semiconductor Processing, (4) 1_3, p.125-131Publication Extraction of the carrier generation and recombination lifetime from the forward characteristics of advanced diodes
Oral presentation2002, E-MRS Spring Meeting Symposium E: Advanced Characterisation of Semiconductor Materials and DevicesPublication Impact of state-of-the-art Cz substrates on the current-voltage characteristics of shallow p-n junctions
Proceedings paper2002, Semiconductor Silicon 2002. Proceedings of the 9th International Symposium on Silicon Materials Science and Technology, 13/05/2002, p.695-704Publication Impact of the divacancy (?) on the generation-recombination properties of 10MeV proton irradiated Float-Zone silicon diodes
Journal article2000, Nuclear Instruments and Methods in Physics Research A, A439, p.310-318Publication Improved extraction of the activation energy of the leakage current in silicon P-N junction diodes
Journal article2001, Applied Physics Letters, (78) 14, p.1997-1999Publication Improved microwave absorption technique for bulk and surface lifetime analysis in processed Si wafers
Proceedings paper1999, Proceedings of the 8th International Autumn Meeting Gettering and Defect Engineering in Semiconductor Technology - GADEST, 25/09/1999, p.155-160Publication Infrared studies of oxygen precipitation related defects in silicon after various thermal treatments
Publication IR and MW absorption techniques for bulk and surface recombination control in high-quality silicon
Proceedings paper1995, Ultraclean Semiconductor Processing Technology and Surface Chemical Cleaning and Passivation, 17/04/1995, p.389-394