Browsing by Author "Griffoni, Alessio"

A statistical approach to microdose induced degradation in FinFET devices

Advanced ESD power clamp design for SOI FinFET CMOS technology

An insight into the effects induced by heavy-ion strikes in

An insight into the parasitic capacitances of SOI and bulk FinFET devices

Angular and strain dependence of heavy-ions induced degration in SOI FinFETs

Calibration of very fast TLP transients

Calibration of very fast TLP transients

CDM and HBM analysis of ESD protected 60 GHz power amplifier in 45 nm low-power digital CMOS

Challenges and solutions for ESD protection in advanced logic and RF CMOS technologies

Characterization and optimization of sub-32nm FinFET devices for ESD applications

Charged device model (CDM) ESD challenges for laterally diffused nMOS (nLDMOS) silicon controlled rectifier (SCR) devices for high-voltage applications in standard low-voltage CMOS technology

Dose enhancement due to interconnects in deep-submicron MOSFETs exposed to X-rays

Dose enhancement due to interconnects in deep-submicron MOSFETs exposed to X-rays

Electrical and thermal scaling trends for SOI FinFET ESD design

Electrical-based ESD characterization methodology for ultrathin body SOI MOSFETs

ESD-aspects of FinFETs and other most advanced devices

HBM ESD robustness of GaN-on-Si Schottky diodes

HBM ESD robustness of GaN-on-Si Schottky diodes

HBM ESD robustness of GaN-on-Si Schottky diodes for power applications

HBM parameter extraction and transient safe operating area