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Browsing by Author "Grill, A."

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    Characteristics of low-k and ultralow-k PECVD deposited SiCOH films

    Grill, A.
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    Patel, V.
    ;
    Rodbell, K.P.
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    Huang, E.
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    Christiansen, S.
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    Baklanov, Mikhaïl
    Proceedings paper
    2002, Silicon Materials - Processing, Characterization, and Reliability, 1/04/2002, p.569-574
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    Efficient physical defect model applied to PBTI in high-k stacks

    Rzepa, G.
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    Franco, Jacopo  
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    Subirats, Alexandre
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    Jech, M.
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    Vaisman Chasin, Adrian  
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    Grill, A.
    Proceedings paper
    2017, IEEE International Reliability Physics Symposium - IRPS, 2/04/2017, p.XT-11.1-XT-11.6
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    Hot-carrier degradation in FinFETs: modeling, peculiarities, and impact of device topology

    Makarov, A
    ;
    Tyaginov, Stanislaw
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    Kaczer, Ben  
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    Jech, M.
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    Vaisman Chasin, Adrian  
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    Grill, A.
    Proceedings paper
    2017, IEEE International Electron Devices Meeting - IEDM, 2/12/2017, p.310-313
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    Hot-carrier degradation in FinFETs: modeling, peculiarities, and impact of device topology

    Makarov, A.
    ;
    Tyaginov, S. E.
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    Kaczer, Ben  
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    Jech, M.
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    Vaisman Chasin, Adrian  
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    Grill, A.
    Proceedings paper
    2017, IEEE International Electron Devices Meeting - IEDM, 2/12/2017, p.310-313
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    Modeling the effect of random dopants on hot-carrier degradation in FinFETs

    Makarov, A.
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    Kaczer, Ben  
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    Roussel, Philippe  
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    Vaisman Chasin, Adrian  
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    Grill, A.
    Proceedings paper
    2019, 2019 IEEE International Reliability Physics Symposium (IRPS), 31/03/2019, p.1-7
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    Porosity in plasma enhanced chemical vapor deposited SiCOH dielectrics: a comparative study

    Grill, A.
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    Patel, V.
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    Rodbell, K.P.
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    Huang, E.
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    Baklanov, Mikhaïl
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    Moguilnikov, Konstantin
    Journal article
    2003, Journal of Applied Physics, (94) 5, p.3427-3435
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    Quantum Mechanical Charge Trap Modeling to Explain BTI at Cryogenic Temperatures

    Michl, J.
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    Grill, A.
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    Claes, D.
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    Rzepa, G.
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    Kaczer, B.
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    Linten, D.
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    Radu, I
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    Grasser, T.
    ;
    Waltl, M.
    Proceedings paper
    2020, IEEE International Reliability Physics Symposium (IRPS), APR 28-MAY 30, 2020
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    Superior NBTI in high-k SiGe transistors - Part I: experimental

    Waltl, Michael
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    Grill, A.
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    Rzepa, Gerhard
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    Goes, Wolfgang
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    Franco, Jacopo  
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    Kaczer, Ben  
    Journal article
    2017, IEEE Transactions on Electron Devices, (64) 5, p.2092-2098
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    Superior NBTI in high-k SiGe transistors - Part II: theory

    Waltl, Michael
    ;
    Rzepa, Gerhard
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    Grill, A.
    ;
    Goes, Wolfgang
    ;
    Franco, Jacopo  
    ;
    Kaczer, Ben  
    Journal article
    2017, IEEE Transactions on Electron Devices, (64) 5, p.2099-2105

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