Browsing by Author "Gupta, Somya"
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Publication Analysis of the time-dependent electrical current in reverse-biased p-GeSn/n-Ge mesa diodes
Meeting abstract2015-09, E-MRS Fall Symposium O: Alternative Semiconductor Integration in Si Microelectronics: Materials, Techniques and Appl., 14/09/2015Publication Border traps in InGaAs nMOSFETs assessed by low-frequency noise
Journal article2014, IEEE Electron Device Letters, (35) 7, p.720-722Publication Current transients in reverse-biased p-GeSn/n-Ge diodes
Proceedings paper2015, International Conference on Silicon Epitaxy and Heterostructures - ICSI-9, 17/05/2015, p.111-112Publication Defect evaluation in strain-relaxed Ge0.947Sn0.053 grown on (001) Si
Journal article2018-10, Applied Physics Letters, (113) 19, p.192103Publication Density and capture cross-section of interface traps in GeSnO2 and GeO2 grown on hetero-epitaxial GeSn
Journal article2016-05, ACS Applied Materials & Interfaces, (8) 21, p.13181-13186Publication Device assessment of electrically active defects in high-mobility materials
Journal article2016, ECS Journal of Solid State Science and Technology, (5) 4, p.P3149-3165Publication Electrical activity of threading dislocations and defect complexes in GeSn epitaxial layers
Proceedings paper2013, 8th International Conference on Silicon Epitaxy and Heterostructures - ICSI-8, 2/06/2013, p.63-64Publication Electrical characterization of p-GeSn/n-Ge diodes with interface traps under dc and ac regimes
Journal article2015, Solid-State Electronics, 110, p.65-70Publication Electrical characterization of pGeSn/nGe diodes
Proceedings paper2014-06, International Silicon Technology and Device Meeting - ISTDM, 2/06/2014, p.53-54Publication Electrical properties of extended defects in strain relaxed GeSn
Journal article2018, Applied Physics Letters, (113) 2, p.22102Publication GeSn channel nMOSFETs: material potential and technological outlook
Proceedings paper2012, Symposium on VLSI Technology, 12/06/2012, p.95-96Publication Identification of deep levels associated with extended and point defects in GeSn epitaxial layers using DLTS
Proceedings paper2013, Graphene, Ge/III-V, and Emerging Materials for Post CMOS Applications 5, 12/05/2013, p.251-258Publication Impact of band to band tunneling in In0.53Ga0.47As tunnel diodes on the deep level transient spectra
Journal article2018, Applied Physics Letters, (113) 23, p.232101Publication Impact of traps on the electrical characteristics of GeSn/Ge diodes
Meeting abstract2014-09, E-MRS 2014 Fall Meeting Symposium J: Alternative Semiconductor Integration in Si Microelectronics: Materials, Techniques & Appl., 15/09/2014Publication On the electrical activity of extended defects in high-mobility channel materials
Proceedings paper2015, ULSI Process Integration 9, 11/10/2015, p.119-130Publication Profiling of border traps at GeSn and high-K oxide interface
Meeting abstract2014-10, Japanese Society for the Promotion of Sciences - JSPS, 5/10/2014, p.P3-1647Publication Profiling of border traps at GeSn and high-K oxide interface
Meeting abstract2014, ECS 2014 Fall Meeting, Symposium P3: High Purity and High Mobility Semiconductors 13, 5/10/2014, p.1647Publication Properties of defects in GeSn and III-V based heterostructures
Gupta, SomyaPHD thesis2018-12Publication Study of electrically active defects in epitaxial layers on silicon
Proceedings paper2016, China Semiconductor Technology International Conference - CSTIC Symposium IV: Thin Film and Process Integration, 13/03/2016Publication Study of interface trap density in a GeSn MOS structure by numerical simulation of the electrical characteristics
Proceedings paper2013, 8th International conference on Silicon Epitaxy and Heterostructures - ICSI-8, 3/06/2013