Browsing by Author "Hall, S."
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Publication Characterization of electron traps in Si-capped Ge MOSFETs with HfO2/SiO2 gate stack
Journal article2012, IEEE Electron Device Letters, (33) 12, p.1681-1683Publication Characterization of negative-bias temperature instability of Ge MOSFETs with GeO2/Al2O3 stack
;Ma, J. ;Zhang, J.F. ;Ji, Zhigang ;Benbakhti, Brahim ;Zhang, Wei Dong ;Zheng, Xue FengJournal article2014, IEEE Transactions on Electron Devices, (61) 5, p.1307-1315Publication Energy distribution of positive charges in Al2O3/GeO2/Ge pMOSFETs
Journal article2014, IEEE Electron Device Letters, (35) 2, p.160-162Publication Extrinsic stacking fault generation related to high-k dielectric growth on a Si substrate
;Volkos, S.N. ;Bernardini, S. ;Rigopoulos, N. ;Efthymiou, E.S. ;Hawkins, I.D.Hamilton, B.Journal article2007, Microelectronic Engineering, (84) 9_10, p.2374-2377Publication Hydrogen induced positive charge in Hf-based dielectrics
;Zhao, C.Z. ;Zhang, J.F. ;Zahid, Mohammed ;Efthymiou, E. ;Lu, Y. ;Hall, S.Peaker, A.R.Journal article2007, Microelectronic Engineering, (84) 9_10, p.2354-2357Publication Process-induced positive charges in Hf-based gate stacks
Journal article2008, Journal of Applied Physics, (103) 1, p.14507Publication Towards understanding hole traps and NBTI of Ge/GeO2/Al2O3 structure
;Ma, J ;Zhang, J.F. ;Ji, Z. ;Benbakhti, B. ;Duan, M. ;Zhang, W. ;Zheng, X.F.; Journal article2013, Microelectronic Engineering, 109, p.43-45