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Browsing by Author "Hall, S."

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    Characterization of electron traps in Si-capped Ge MOSFETs with HfO2/SiO2 gate stack

    Benbakhti, B.
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    Zhang, J.F.
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    Li, Z.
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    Zhang, W
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    Mitard, Jerome  
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    Kaczer, Ben  
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    Groeseneken, Guido  
    Journal article
    2012, IEEE Electron Device Letters, (33) 12, p.1681-1683
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    Characterization of negative-bias temperature instability of Ge MOSFETs with GeO2/Al2O3 stack

    Ma, J.
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    Zhang, J.F.
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    Ji, Zhigang
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    Benbakhti, Brahim
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    Zhang, Wei Dong
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    Zheng, Xue Feng
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    Mitard, Jerome  
    Journal article
    2014, IEEE Transactions on Electron Devices, (61) 5, p.1307-1315
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    Energy distribution of positive charges in Al2O3/GeO2/Ge pMOSFETs

    Ma, J
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    Zhang, J. F.
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    Ji, Zhigang
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    Benbakhti, Brahim
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    Zhang, Wei
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    Mitard, Jerome  
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    Kaczer, Ben  
    Journal article
    2014, IEEE Electron Device Letters, (35) 2, p.160-162
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    Extrinsic stacking fault generation related to high-k dielectric growth on a Si substrate

    Volkos, S.N.
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    Bernardini, S.
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    Rigopoulos, N.
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    Efthymiou, E.S.
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    Hawkins, I.D.
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    Hamilton, B.
    Journal article
    2007, Microelectronic Engineering, (84) 9_10, p.2374-2377
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    Hydrogen induced positive charge in Hf-based dielectrics

    Zhao, C.Z.
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    Zhang, J.F.
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    Zahid, Mohammed
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    Efthymiou, E.
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    Lu, Y.
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    Hall, S.
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    Peaker, A.R.
    Journal article
    2007, Microelectronic Engineering, (84) 9_10, p.2354-2357
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    Process-induced positive charges in Hf-based gate stacks

    Zhao, C.Z.
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    Zhang, J.F.
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    Chang, M.H.
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    Peaker, A.R.
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    Hall, S.
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    Groeseneken, Guido  
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    Pantisano, Luigi
    Journal article
    2008, Journal of Applied Physics, (103) 1, p.14507
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    Towards understanding hole traps and NBTI of Ge/GeO2/Al2O3 structure

    Ma, J
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    Zhang, J.F.
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    Ji, Z.
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    Benbakhti, B.
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    Duan, M.
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    Zhang, W.
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    Zheng, X.F.
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    Mitard, Jerome  
    ;
    Kaczer, Ben  
    Journal article
    2013, Microelectronic Engineering, 109, p.43-45

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