Browsing by Author "Ikeda, Atsushi"
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Publication A high-reliable Cu/ULK integration scheme using Metal Hard Mask and Low-k capping film
Oral presentation2007, Advanced Metallization Conference: 17th Asian SessionPublication Defect profiling and the role of nitrogen in lanthanum oxide-capped high-k dielectrics for nMOS applications
Proceedings paper2008-09, International Conference on Solid State Devices and Materials - SSDM, 24/09/2008, p.680-681Publication Highly reliable Cu/ULK integratrion scheme using MHM and low-k capping film
Oral presentation2007, Advanced Metallization Conference - AMCPublication Oxygen-vacancy-induced Vt shift in La-containing devices
Proceedings paper2007, Extended Abstracts of the International Conference on Solid State Devices and Materials - SSDM, 19/09/2007, p.372-373Publication Quantification of MOSFET device reliability with low-Vt lanthanum-incorporated high permittivity dielectrics
Journal article2009, Journal of Applied Physics, (106) 11, p.114504Publication Reliability study of La2O3 capped HfSiON high-permittivity n-type metal-oxide-semiconductor field-effect transistor devices with tantalum-rich electrodes
Journal article2008, Journal of Applied Physics, (104) 4, p.44500Publication Work-function engineering for 32nm node pMOS devices: high-performance TaCNO-gated films
Journal article2008, IEEE Electron Device Letters, (29) 11, p.1203-1205