Browsing by Author "Iwamoto, Fumio"
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Publication A methodology for double patterning compliant split and design
Proceedings paper2008, SPIE Lithography Asia, 4/11/2008, p.71401XPublication Dependence of EUV mask printing performance on blank architecture
Proceedings paper2008-03, Emerging Lithographic Technologies XXII, 24/02/2008, p.69211WPublication EUV lithography program at IMEC
Proceedings paper2007, Emerging Lithographic Technologies XI, 27/02/2007, p.651709Publication EUVL at IMEC: shadowing compensation and Flare mitigation
Journal article2007-11, Journal of Vacuum Science and Technology B, (25) 6Publication Full field EUV lithography turning into reality at IMEC
Proceedings paper2007, Photomask Japan (PMJ) - Photomask and Next-Generation Lithography Mask Technology XIV, 17/04/2007, p.66070HPublication Implementing full field EUV lithography using the ADT
;Goethals, Mieke; ; ; ; Proceedings paper2008, International Symposium on Extreme Ultraviolet Lithography - EUVL, 28/09/2008Publication Innovative metrology for wafer edge defectivity in immersion lithography
Proceedings paper2007, Metrology, Inspection and Process Control for Microlithography XXI, 25/02/2007, p.65180TPublication Investigation of EUV mask defectivity via full-field printing and inspection on wafer
Proceedings paper2009, Photomask and Next-Generation Lithography Mask Technology XVI, 8/04/2009, p.73790RPublication Investigation of mask defectivity in full field EUV lithography
Proceedings paper2007, SPIE Photomask Technology (BACUS), 17/09/2007, p.673012Publication Mask defect printability in full field EUV lithography
Proceedings paper2007, International EUVL Symposium, 28/10/2007Publication Progress in full field EUV lithography program at IMEC
Proceedings paper2007, International EUVL Sympsoium, 28/10/2007Publication Split and design guidelines for double patterning
Proceedings paper2008, Optical Microlithography XXI, 24/02/2008, p.692409Publication Status of EUV lithography at IMEC
Journal article2007, Journal of Photopolymer Science & Technology, (20) 3, p.383-292