Browsing by Author "Jin, S."
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Publication A chemical role of refractory metal caps in Co silicidation: Evidence of SiO2 reduction by Ti cap
; ; Journal article1999, J. Materials Research, (14) 11, p.4402-4408Publication A new approach for the measurement of resistivity and cross-sectional area of an aluminium interconnect line: principle and applications
Proceedings paper1998, Advanced Metallization and Interconnect Systems for ULSI Applications in 1997, 30/09/1997, p.197-204Publication Calculation of the electron mobility in III-V inversion layers with high-kappa dielectrics
Journal article2010, Journal of Applied Physics, (108) 10, p.103705Publication Characterisation of tungsten nitride barrier layer for copper metallisation
Proceedings paper1999, Microscopy of Semiconducting Materials, 22/03/1999, p.541-544Publication Characterization and barrier properties for Cu metallization of tungsten nitride deposited by PECVD using WF6+N2+H2
Oral presentation1998, Advanced Metallization Conference; October 1998;Publication Characterization of WF6/N2/H2 plasma enhanced chemical vapor deposited WxN films as barriers for Cu metallization
Journal article2000, J. Vacuum Science and Technology B, (B18) 1, p.242-251Publication Comparative study of Ni-silicide and Co-silicide for sub 0.25-μm technologies
Journal article2000, Microelectronic Engineering, (50) 1_4, p.103-116Publication Comparison of the electromigration behavior of Al(MgCu) with Al(Cu) and Al(SiCu)
Proceedings paper1998, Advanced Interconnects and Contact Materials and Processes for Future Integrated Circuits, 13/04/1998, p.133-138Publication Effects of low-thermal-budget treatments on the porous Si material properties
; ; ; Publication Effects of low-thermal-budget treatments on the porous silicon material properties
; ; ; Publication Electron microscopic studies of Co- and Ti-germanosilicide films formed on SiGe layers
Proceedings paper1998, Electron Microscopy of Semiconducting Materials and ULSI Devices, 15/04/1998, p.133-138Publication Epitaxial GdSi1.7 prepared by ion beam synthesis on (111) silicon
Oral presentation1996, EUREM96 - XIth European Congress on Microscopy; August 26-30, 1996; Dublin, Ireland.Publication Epitaxial GdSi1.7 prepared by ion beam synthesis on (111) silicon
Proceedings paper1998, Electron Microscopy 96; Proceedings of EUREM-11, The 11th Conference on Electron Microscopy, 26/08/1996, p.198-199Publication Epitaxial growth of Gd silicides prepared by channeled ion implantation
Journal article1997, Journal of Applied Physics, (81) 7, p.3103-3107Publication Formation and thermal stability of Nd0.32Y0.68Si1.7 layers formed by channeled ion beam synthesis
Proceedings paper1998, Advanced Interconnects and Contact Materials and Processes for Future Integrated Circuits, 13/04/1998, p.191-196Publication Formation of continuous and ultra-thin PtSi layers for infrared detector applications
Oral presentation1998, Workshop on Nanoscale Characterization of Silicide/Semiconductor Contacts by Scanning Probe Microscopy; 24 Sept. 1998; Gent, BelPublication Formation of ultra-thin PtSi layers with a 2-step silicidation process
; ; Journal article1997, Microelectronic Engineering, 37/38, p.507-514Publication Growth of (111)-oriented Pb(Zr,Ti)O3 layers on nanocrystalline RuO2 electrodes using the sol-gel technique
Journal article2001, Journal of Materials Research, (16) 3, p.828-833Publication Growth of high-quality buried Y- and (Y, Nd)-silicide layers prepared by channelled ion implantation
Journal article1998, Journal of Crystal Growth, (194) 2, p.189-194Publication Influence of SiGe thickness on the Co/SiGe/Si solid state reaction
Proceedings paper1999, Advanced Interconnects and Contacts, 05/04/1999, p.151-156
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