Browsing by Author "Kumar, Arul"
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Publication 3D dopant profiling in silicon nanowires
Oral presentation2016, European Atom Probe Tomography WorkshopPublication 3D site specific sample preparation and analysis of 3D devices (Finfets) by atom probe tomography
Oral presentation2012, 53rd International Field Emission Symposium - IFESPublication 3D site specific sample preparation and analysis of 3D devices (FinFETs) by atom probe tomography
Journal article2013, Ultramicroscopy, (132) 1, p.69-69Publication 3D-doping in Finfets and nanowires : fabrication and metrology challenges and solutions
Oral presentation2011, E-MRS Symposium I: Transport in Si-based NanodevicesPublication Advances in metrology for complex epitaxial systems embedded in small volums
Meeting abstract2015-05, 9th International Conference on Silicon Epitaxy and Heterostructures - ICSI9, 18/05/2015, p.133-134Publication Amorphous inclusions during Ge and GeSn epitaxial growth via chemical vapor deposition
Journal article2015, Thin Solid Films, 590, p.163-169Publication Application of atom probe tomography to epitaxial layers
Proceedings paper2013, 8th International Conference on Silicon Epitaxy and Heterostructures - ICSI-8, 2/06/2013, p.79-80Publication APT analysis of short (~200 nm) Si nanowires embedded in SiO2 and HfO2
Oral presentation2016, APT&MPublication Atom probe tomography analysis of SiGe fins embedded in SiO2: facts and artefacts
Journal article2017, Ultramicroscopy, 179, p.100-107Publication Atom probe tomography for 3D-dopant analysis in FinFET devices
Proceedings paper2012, Symposium on VLSI Technology - VLSIT, 12/06/2012, p.77-78Publication Atom probe tomography for advanced semiconductor metrology
Meeting abstract2012, International Field Emission Symposium- IFES, 21/05/2012Publication Atom-probe for arsenic implant doped FinFET characterization
Oral presentation2012, 53rd International Field Emmission SymposiumPublication Atomic insight into relaxation mechanism of Ge(1-x)Sn(x) using atom probe tomography
Meeting abstract2012, E-MRS Spring Meeting Symposium A: Advanced Silicon Materials Research for Electronic and Photovoltaic Applications III, 14/05/2012Publication Atomic insight of Ge(1-x)Sn(x) using atom probe tomography
Proceedings paper2012, 53rd International Field Emission Symposium - IFES, 21/05/2012Publication Challenges for APT in advanced semiconductor technology research
Meeting abstract2016, Atom Probe Tomography & Microscopy - APT&M, 12/06/2016Publication Crystalline properties and strain relaxation mechanism of CVD grown GeSn
Proceedings paper2012, SiGe, Ge, and Related Compunds 5: Materials, Processing, and Devices, 7/10/2012, p.875-883Publication Crystalline properties and strain relaxation mechanism of CVD grown GeSn
Meeting abstract2012, ECS Fall Meeting Symposium: SiGe, Ge, and Related Compounds: Materials, Processing, and Devices, 7/10/2012, p.3213Publication Crystalline properties and strain relaxation mechanism of CVD grown GeSn
Journal article2013, ECS Journal of Solid State Science and Technology, (2) 4, p.P134-P137Publication CVD epitaxial growth of GeSn opens a new route for advanced Sn-based logic and photonics devices
Proceedings paper2012, 6th International Silicon- Germanium Technology and Device Meeting - ISTDM, 4/06/2012Publication Elemental redistribution of Pt and Pd in nickel silicides: a comparative study
Meeting abstract2012, Materials for Advanced Metallization - MAM, 11/03/2012, p.O4-4