Browsing by Author "Li, Zilan"
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Publication Effective metal gate work function modification by ion implantation with W-based gate stack
Oral presentation2008, 5th International Symposium on Advanced Gate Stack TechnologyPublication Energy band-alignment of a multimetal-layer gated metal-oxide-semiconductor structure
Journal article2009, Applied Physics Letters, (95) 18, p.183506Publication Flat-band voltage shift of Ruthenium gated stacks and its link with the formation of a thin Ruthenium oxide layer at the Ruthenium/dielectric interface
Journal article2007-02, Journal of Applied Physics, (101) 3, p.34503Publication Forming gas anneal induced flat-band voltage shift of metal-oxide-semiconductor stacks and its link with hydrogen incorporation in metal gates
Journal article2007, Microelectronic Engineering, (84) 9_10, p.2213-2216Publication Influence of metal capping layer on the work function of Mo gated metal-oxide semiconductor stacks
Journal article2008, Applied Physics Letters, (93) 8, p.83511Publication Investigation on molybdenum and its conductive oxides as p-type metal gate candidates
Proceedings paper2007, Physics and Technology of High-k Dielectrics, 7/10/2007, p.575-583Publication Investigation on molybdenum and its conductive oxides as p-type metal gate candidates
Journal article2008, Journal of the Electrochemical Society, (155) 7, p.H481Publication Mechanism of O2-anneal induced Vfb shifts of Ru gated stacks
Journal article2007, Microelectronics Reliability, (47) 4_5, p.518-520Publication Metal gate work function control for advanced MOSFET applications
Li, ZilanPHD thesis2009-09Publication Oxygen incorporation in TiN for metal gate work function tuning with a replacement gate integration approach
Journal article2010, Microelectronic engineering, 87, p.1805-1807Publication Substrate transfer of GaN-LED on 200mm Si wafer
Proceedings paper2013, Electronics Packaging Technology Conference - EPTC, 11/12/2013Publication Surface termination of HfO2 in W/HfO2 gated metal-oxide-semiconductor stacks from thermal stability point of view
Oral presentation2008, 5th International Symposium on Advanced Gate Stack TechnologyPublication Ultra low-EOT (5 Å) gate-first and gate-last high performance CMOS achieved by gate-electrode optimization
Proceedings paper2009, IEEE International Electron Devices Meeting - IEDM, 7/12/2009, p.663-666