Browsing by Author "Lukyanchikova, N. B."
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Publication Assymetry of the RTSs capture and emission kinetics in nMOSFETs processed in a 0.35μm CMOS technology
Proceedings paper1997, Noise in Physical Systems and 1/f Fluctuations: Proceedings of the 14th International Conference, 14/07/1997, p.232-235Publication Effect of surface electric field on Coulomb blockade energy and RTS capture kinetics in submicron nMOSFETs
Proceedings paper1999, ICNF - 15th International Conference on Noise in Physical Systems and 1/f Fluctuations, 23/08/1999, p.344-347Publication Generation-recombination and 1/f noise in buried channel pMOSFETs under inversion conditions
Proceedings paper1994, Proceedings of the 7th Vilnius Conference on Fluctuation Phenomena in Physical Systems, 4/10/1994, p.384-389Publication Impact of cobalt silicidation on the low-frequency noise behavior of shallow P-N junctions
Journal article2000, IEEE Electron Device Letters, (21) 8, p.408-410Publication Impact of the free electron distribution on the random telegraph signal capture kinetics in submicron n-metal-oxide-semiconductor field-effect transistors
Journal article1998, Applied Physics Letters, (73) 17, p.2444-2446Publication Influence of the substrate voltage on the random telegraph signal parameters in submicron n-channel metal-oxide-semiconductor field-effect transistors under a constant inversion charge density
Journal article2000, Applied Physics A, (A70) 3, p.345-353Publication Low-frequency noise characterisation of silicon-on-insulator depletion mode pMOSFETs
Proceedings paper1995, Physical and Technical Problems of SOI Structures and Devices; Proceedings of the NATO Advanced Research Workshop on Physical an, p.247-252Publication Low-frequency noise sources in silicon-on-insulator depletion-mode MOSFETs
Proceedings paper1995, Noise in Physical Systems and 1/f Fluctuations - ICNF. Proceedings of the 13th International Conference, 29/05/1995, p.422-425Publication Low-frequency noise sources in silicon-on-insulator depletion-mode p-MOSFETs
Oral presentation1994, NATO Advanced Research Workshop on Physical and Technical Problems of SOI Structures and DevicesPublication Non-trivial GR and 1/f noise generated in the p-Si layer of SOI and SOS MOSFETs near the inverted front or buried p-Si/SiO2 interface
Journal article1999, Semiconductor Science and Technology, (14) 9, p.775-783Publication Physical model of GR noise observed under inversion conditions near the pSi/SiO2 interfaces in SIMOX submicron MOSFETs and its application for defect characterization
Proceedings paper1997, Proceedings 1997 International Semiconductor Device Research Symposium, p.131-134Publication Random telegraph signals as a diagnostic tool to study single defects in submicron silicon MOSFETs
Meeting abstract1999, BNV- SBP. General Scientific Meeting. Program Overview, Plenary Invited Lectures, Oral and Poster Communications, 20/05/1999, p.CM24Publication Results of low-frequency noise in submicron nMOSFETs processed by a 0.35mm CMOS technology
Proceedings paper1996, Proceedings 3rd ELEN Workshop, 5/11/1996, p.150-155Publication RTS capture kinetics and Coulomb blockade energy in submicron nMOSFETs under surface quantization conditions
Journal article1999, Microelectronic Engineering, (48) 1_4, p.185-188Publication Single defect studies by means of random telegraph signals in submicron silicon MOSFETs
Proceedings paper1999, Proceedings of the 8th International Autumn Meeting Gettering and Defect Engineering in Semiconductor Technology - GADEST, 25/09/1999, p.467-472